Abstract: Methods and systems disclosed herein use acoustic energy to determine a gap between a wafer and an integrated circuit (IC) processing system and/or determine a thickness of a material layer of the wafer during IC processing implemented by the IC processing system. An exemplary method includes emitting acoustic energy through a substrate and a material layer disposed thereover. The substrate is positioned within an IC processing system. The method further includes receiving reflected acoustic energy from a surface of the substrate and a surface of the material layer disposed thereover and converting the reflected acoustic energy into electrical signals. The electrical signals indicate a thickness of the material layer.

Abstract: Methods and systems disclosed herein use acoustic energy to determine a gap between a wafer and an integrated circuit (IC) processing system and/or determine a thickness of a material layer of the wafer during IC processing implemented by the IC processing system. An exemplary method includes emitting acoustic energy through a substrate and a material layer disposed thereover. The substrate is positioned within an IC processing system. The method further includes receiving reflected acoustic energy from a surface of the substrate and a surface of the material layer disposed thereover and converting the reflected acoustic energy into electrical signals. The electrical signals indicate a thickness of the material layer.

Abstract: Methods and systems disclosed herein use acoustic energy to determine a gap between a wafer and an integrated circuit (IC) processing system and/or determine a thickness of a material layer of the wafer during IC processing implemented by the IC processing system. An exemplary method includes emitting acoustic energy through a substrate and a material layer disposed thereover. The substrate is positioned within an IC processing system. The method further includes receiving reflected acoustic energy from a surface of the substrate and a surface of the material layer disposed thereover and converting the reflected acoustic energy into electrical signals. The electrical signals indicate a thickness of the material layer.

Abstract: Methods and systems disclosed herein use acoustic energy to determine a gap between a wafer and an integrated circuit (IC) processing system and/or determine a thickness of a material layer of the wafer during IC processing implemented by the IC processing system. An exemplary method includes emitting acoustic energy through a substrate and a material layer disposed thereover. The substrate is positioned within an IC processing system. The method further includes receiving reflected acoustic energy from a surface of the substrate and a surface of the material layer disposed thereover and converting the reflected acoustic energy into electrical signals. The electrical signals indicate a thickness of the material layer.

Abstract: A system and method for determining clearance between a fabrication tool and a workpiece is provided. In an exemplary embodiment, the method includes receiving a substrate within a tool such that a gap is defined there between. A transducer disposed on a bottom surface of the substrate opposite the gap provides an acoustic signal that is conducted through the substrate. The transducer also receives a first echo from a top surface of the substrate that defines the gap and a second echo from a bottom surface of the tool that further defines the gap. A width of the gap is measured based on the first echo and the second echo. In some embodiments, the bottom surface of the tool is a bottom surface of a nozzle, and the nozzle provides a liquid or a gas in the gap while the transducer is receiving the first and second echoes.

Abstract: Methods and systems disclosed herein use acoustic energy to determine a gap between a wafer and an integrated circuit (IC) processing system and/or determine a thickness of a material layer of the wafer during IC processing implemented by the IC processing system. An exemplary method includes emitting acoustic energy through a substrate and a material layer disposed thereover. The substrate is positioned within an IC processing system. The method further includes receiving reflected acoustic energy from a surface of the substrate and a surface of the material layer disposed thereover and converting the reflected acoustic energy into electrical signals. The electrical signals indicate a thickness of the material layer.

Abstract: A dielectric ceramic material includes the composite ceramic powder of BaTiO3 and Ba2LiTa5O15, or BaTiO3 and Ba2LiNb5O15 that are based on the oxides of BaO, TiO2, Li2O and Ta2O5, or BaO, TiO2, Li2O and Nb2O5 as initial powder materials prepared subject to a respective predetermined percentage. This dielectric ceramic material simply uses simple binary oxides as initial powder materials that are easy to obtain and inexpensive, and that eliminate the complicated manufacturing process of synthesizing BaTiO3, Ba2LiTa5O15 or Ba2LiNb5O15, making the whole process more simple and the manufacturing cost more cheaper and preventing the formation of other compounds.

Abstract: A system and method for determining clearance between a fabrication tool and a workpiece is provided. In an exemplary embodiment, the method includes receiving a substrate within a tool such that a gap is defined there between. A transducer disposed on a bottom surface of the substrate opposite the gap provides an acoustic signal that is conducted through the substrate. The transducer also receives a first echo from a top surface of the substrate that defines the gap and a second echo from a bottom surface of the tool that further defines the gap. A width of the gap is measured based on the first echo and the second echo. In some embodiments, the bottom surface of the tool is a bottom surface of a nozzle, and the nozzle provides a liquid or a gas in the gap while the transducer is receiving the first and second echoes.

Abstract: A dielectric ceramic material includes the composite ceramic powder of BaTiO3 and Ba2LiTa5O15, or BaTiO3 and Ba2LiNb5O15 that are based on the oxides of BaO, TiO2, Li2O and Ta2O5, or BaO, TiO2, Li2O and Nb2O5 as initial powder materials prepared subject to a respective predetermined percentage. This dielectric ceramic material simply uses simple binary oxides as initial powder materials that are easy to obtain and inexpensive, and that eliminate the complicated manufacturing process of synthesizing BaTiO3, Ba2LiTa5O15 or Ba2LiNb5O15, making the whole process more simple and the manufacturing cost more cheaper and preventing the formation of other compounds.

Abstract: A dielectric ceramic material includes the composite ceramic powder of BaTiO3 and Ba2LiTa5O15, or BaTiO3 and Ba2LiNb5O15 that are based on the oxides of BaO, TiO2, Li2O and Ta2O5, or BaO, TiO2, Li2O and Nb2O5 as initial powder materials prepared subject to a respective predetermined percentage. This dielectric ceramic material simply uses simple binary oxides as initial powder materials that are easy to obtain and inexpensive, and that eliminate the complicated manufacturing process of synthesizing BaTiO3, Ba2LiTa5O15 or Ba2LiNb5O15, making the whole process more simple and the manufacturing cost more cheaper and preventing the formation of other compounds.

Abstract: A dielectric ceramic material includes the composite ceramic powder of BaTiO3 and Ba2LiTa5O15, or BaTiO3 and Ba2LiNb5O15 that are based on the oxides of BaO, TiO2, Li2O and Ta2O5, or BaO, TiO2, Li2O and Nb2O5 as initial powder materials prepared subject to a respective predetermined percentage. This dielectric ceramic material simply uses simple binary oxides as initial powder materials that are easy to obtain and inexpensive, and that eliminate the complicated manufacturing process of synthesizing BaTiO3, Ba2LiTa5O15 or Ba2LiNb5O15, making the whole process more simple and the manufacturing cost more cheaper and preventing the formation of other compounds.