Abstract: The present invention relates to a compound for inhibiting ENPP1, a composition for inhibiting ENPP1, and a novel phthalazine derivative compound related to a method for inhibiting ENPP1, a pharmaceutically acceptable salt thereof, a hydrate thereof, or a stereoisomer thereof.

Abstract: Discussed is a battery module including: a cell stack including a first battery cell including a first electrode lead and a second battery cell including a second electrode lead; a bus bar frame including a pair of lead slits through which the first electrode lead and the second electrode lead pass, respectively; and a bus bar fixed to the bus bar frame, wherein the first electrode lead and the second electrode lead are located on the bus bar in a state where a longitudinal end portion of the first electrode lead and a longitudinal end portion of the second electrode lead are engaged with each other, and a welding portion for bonding the first electrode lead and the second electrode lead to the bus bar is formed in a region where the first electrode lead and the second electrode lead are engaged with each other.

Abstract: An embodiment relates to a surface emitting laser device and a light emitting device including the same. The surface emitting laser device according to the embodiment may include a first reflective layer; an active layer disposed on the first reflective layer; an active region disposed on the active layer and having an aperture and an insulation region disposed around the aperture; and a second reflective layer disposed on the active region. The second reflective layer may include a core reflective layer disposed in a position vertically corresponding to the aperture. The embodiment may include a cladding insulation layer disposed around the core reflective layer. The horizontal cross-section of the aperture may be different from the horizontal cross-section of the core reflective layer.

Abstract: A battery module according to an embodiment of the present disclosure includes: a cell stack including a plurality of battery cells each including a pair of electrode leads; a fastening bar frame including a pair of lead slits through which electrode leads of adjacent battery cells are passed through; and a fastening bar including an insertion slit through which a pair of electrode leads passing through the pair of adjacent lead slits pass, the fastening bar being coupled to the fastening bar frame.

Abstract: Disclosed is a power module capable of maximizing heat dissipation performance through application of a thick lead frame and a ceramic coating layer to upper and lower sides of a semiconductor device.

Abstract: A motor drive device includes: a first inverter including a plurality of first switching elements and connected to a plurality of coils; a second inverter including a plurality of second switching elements and connected to the plurality of coils; a plurality of transfer switching elements connected to the second ends; a capacitor disposed at one side of a casing of a motor; first and second cooling channels disposed at both sides of the capacitor; a plurality of first power modules including some of the plurality of first switching elements and some of the transfer switching elements; and a plurality of second power modules including some of the plurality of second switching elements.

Abstract: A method for detecting an analyte includes providing a sensor that includes a plurality of coupled polaritonic structures having polaritonic resonances. A surface of at least one of the polaritonic structure in the sensor is functionalized by providing a receptor for binding the analyte to the surface. The sensor is operated at an exceptional point (EP). The presence of the analyte on the surface is identified when a degeneracy of resonant frequencies and linewidths is lifted and a splitting of the resonant frequencies and linewidths occurs.

Abstract: An insulating substrate provided between the semiconductor chip and a cooler in the dual-side cooled power module includes: an inner metal layer configured to face the semiconductor chip; an outer metal layer configured to face the cooler; and an insulating layer interposed between the inner metal layer and the outer metal layer, wherein at least one inner thermal diffusion inductor of a plurality of inner thermal diffusion inductors is inserted into the inner metal layer.

Abstract: A soldering structure configured for preventing solder overflow during soldering and a power module, may include a component to be soldered; and a metal layer having a bonding area, to which the component to be soldered is bonded by solder, and a groove portion formed around the bonding area.

Abstract: A power module includes a substrate having a dielectric layer, a first power semiconductor device disposed on an upper part of the substrate, and a second power semiconductor device disposed on a lower part of the substrate.

Abstract: A multi-layered spacer of which a thermal expansion coefficient and a thermal conductivity are controllable and a double-sided cooling power module including the multi-layered spacer, is provided between a semiconductor chip and a substrate in a double-sided cooling power module. The multi-spacer includes first metal layers made of a first metal and provided as at least respective outermost layers, and a second metal layer made of a second metal having a thermal expansion coefficient lower than a thermal expansion coefficient of the first metal and disposed between the first metal layers provided as the outermost layers.

Abstract: A double-sided cooling type power module according to the present invention includes: an upper substrate including an insulating layer, an upper metal layer bonded to a top of the insulating layer, and a lower metal layer bonded to a bottom of the insulating layer; a lower substrate disposed under the upper substrate and including an insulating layer, an upper metal layer bonded to a top of the insulating layer, and a lower metal layer bonded to a bottom of the insulating layer; a spacer disposed between the upper substrate and the lower substrate and electrically connecting the upper substrate and the lower substrate; and a semiconductor chip disposed between the spacer and the upper substrate or the lower substrate, in which the insulating layers are made of a material of which a coefficient of thermal expansion is 0.8 or more and 1.2 or less times of coefficients of thermal expansion of the metal layers of the upper substrate and the lower substrate.

Abstract: A power module includes a substrate having a dielectric layer, a first power semiconductor device disposed on an upper part of the substrate, and a second power semiconductor device disposed on a lower part of the substrate.

Abstract: A spacer structure, which connects an insulating substrate and a semiconductor chip of a double-sided-cooled power module, includes: a conductive material layer which is composed of a composite material; an underlying plating layer disposed on the conductive material layer; and a copper plating layer disposed on the underlying plating layer, in which the copper plating layer is in contact with a joining material that joins the spacer to the semiconductor chip and the insulating substrate.

Abstract: A spacer structure, which connects an insulating substrate and a semiconductor chip of a double-sided-cooled power module, includes: a conductive material layer which is composed of a composite material; an underlying plating layer disposed on the conductive material layer; and a copper plating layer disposed on the underlying plating layer, in which the copper plating layer is in contact with a joining material that joins the spacer to the semiconductor chip and the insulating substrate.

Abstract: A power module includes an upper substrate comprising a plurality of circuit pattern areas made of a metal and a dielectric area disposed between each of the plurality of circuit pattern areas; a lower substrate including a plurality of circuit pattern areas made of a metal and a dielectric area disposed between each of the plurality of circuit pattern areas; and a semiconductor element having an upper terminal and a lower terminal, the upper terminal and the lower terminal being bonded to a lower surface of the upper substrate and an upper surface of the lower substrate, respectively.

Abstract: Disclosed is a power module capable of maximizing heat dissipation performance through application of a thick lead frame and a ceramic coating layer to upper and lower sides of a semiconductor device.

Abstract: A communication method and apparatus between heterogeneous platforms. A communication method of an interaction server that enables an interaction between a first platform server and a second platform server providing different platforms includes receiving, from the first platform server, a token request that includes first user identification information registered to the first platform server; transmitting, to the first platform server, a token that is created based on integrated user identification information corresponding to the first user identification information; receiving, from the second platform server, a request for verifying a validity of the token transferred from the first platform server to the second platform server; and transferring, to the second platform server in response to the validity of the token, second user identification information that corresponds to the integrated user identification information and is registered to the second platform server.

Abstract: A flexible assembly system for multi-product production and a method of reconfiguring a production line for multi-product production. A method of designing a production line includes configuring reconfigurable assembly modules (RAMs) for each production process of the production line using components included in a production line configuring tool, verifying a production amount of each of the RAMs using a production line simulator, designing the production line using RAMs with a production amount greater than or equal to a threshold value, and transmitting design information of the production line to an onsite production line installer terminal.

Abstract: A power module includes an upper substrate comprising a plurality of circuit pattern areas made of a metal and a dielectric area disposed between each of the plurality of circuit pattern areas; a lower substrate including a plurality of circuit pattern areas made of a metal and a dielectric area disposed between each of the plurality of circuit pattern areas; and a semiconductor element having an upper terminal and a lower terminal, the upper terminal and the lower terminal being bonded to a lower surface of the upper substrate and an upper surface of the lower substrate, respectively.