Abstract: The photosensitive region includes a first impurity region and a second impurity region having a higher impurity concentration than that of the first impurity region. The photosensitive region includes one end positioned away from the transfer section in the second direction and another end positioned closer to the transfer section in the second direction. A shape of the second impurity region in plan view is line-symmetric with respect to a center line of the photosensitive region along the second direction. A width of the second impurity region in the first direction increases in a transfer direction from the one end to the other end. An increase rate of the width of the second impurity region in each of sections, obtained by dividing the photosensitive region into n sections in the second direction, becomes gradually higher in the transfer direction. Here, n is an integer of two or more.

Abstract: A distance image acquisition device includes a distance measurement sensor that detects a measurement light by transferring charges generated in a charge generation region in response to incidence of a measurement light reflected by a target object, to a charge accumulation region by using a transfer gate electrode. The charge generation region includes an avalanche multiplication region that causes avalanche multiplication. The control unit divides an entire distance range of a measurement target into the plurality of sections, controls the distance measurement sensor so as to perform measurements about a plurality of sections while varying a time difference between an emission timing of the measurement light by the light source and a transferring timing of the charges by the transfer gate electrode among the plurality of sections, and generates a distance image of the entire distance range based on the results of the measurements about the plurality of sections.

Abstract: An optical sensor includes an avalanche multiplication region including a first multiplication region having a first conductive type and a second multiplication region having a second conductive type, each of the first multiplication region and the second multiplication region being formed in a layer shape, a charge collection region having the second conductive type disposed on a first side of the second multiplication region, and a first conductive region having the first conductive type disposed on the first side of the second multiplication region. The second multiplication region has a first portion overlapping the charge collection region in a thickness direction of the first multiplication region and the second multiplication region and a second portion overlapping the first conductive region in the thickness direction. A concentration of impurities in the first portion is higher than a concentration of impurities in the second portion.

Abstract: A light detection device includes a controller that controls electric potentials of a charge collection electrode and a transfer gate electrode so that potential energy in a region immediately below the charge collection electrode is a first level, and potential energy in a region immediately below the transfer gate electrode is higher than the potential energy in the region immediately below the charge collection electrode in a first period, and so that the potential energy in the region immediately below the charge collection electrode is a second level higher than the first level, and the potential energy in the region immediately below the transfer gate electrode is lower than the potential energy in the region immediately below the charge collection electrode in a second period after the first period.

Abstract: In a ranging image sensor, each pixel includes an avalanche multiplication region, a charge distribution region, a pair of first charge transfer regions, a pair of second charge transfer regions, a well region, a photogate electrode, a pair of first transfer gate electrodes, and a pair of second transfer gate electrodes. The first multiplication region of the avalanche multiplication region is formed so as to overlap the charge distribution region and so as not to overlap the well region in the Z direction. The second multiplication region of the avalanche multiplication region is formed so as to overlap the charge distribution region and the well region in the Z direction.

Abstract: In a light detection device, a control unit performs a first charge transfer process for transferring charge generated in a charge generation region to a charge storage region by applying an electric potential to a transfer gate electrode so that a potential energy of a region immediately below the transfer gate electrode is lower than a potential energy of the charge generation region and a first read process for reading an amount of charge stored in the charge storage region. In the first charge transfer process, the control unit applies an electric potential to an overflow gate electrode so that a potential energy of a region immediately below the overflow gate electrode is lower than the potential energy of the charge generation region.

Abstract: In a distance measurement device, a control unit performs a charge distribution process in which in a first period, charge generated in a charge generation region is transferred to a first charge storage region and, in a second period, the charge generated in the charge generation region is transferred to a second charge storage region. The control unit applies an electric potential to a first overflow gate electrode so that a potential energy of a region immediately below the first overflow gate electrode is lower than a potential energy of the charge generation region in the first period, and applies an electric potential to a second overflow gate electrode so that a potential energy of a region immediately below the second overflow gate electrode is lower than a potential energy of the charge generation region in the second period.

Abstract: A multiplying image sensor includes a semiconductor layer having a first surface and a second surface and a wiring layer provided on the second surface. The semiconductor layer includes a plurality of pixels arranged along the first surface. Each of the plurality of pixels includes a first semiconductor region, a second semiconductor region formed on the second surface side with respect to at least a part of the first semiconductor region and divided for each of the plurality of pixels, and a well region formed in the second semiconductor region so as to be separated from the first semiconductor region and forming a part of a pixel circuit. At least a part of the first semiconductor region and at least a part of the second semiconductor region form an avalanche multiplication region.

Abstract: A ranging image sensor includes a semiconductor layer and an electrode layer. The semiconductor layer and the electrode layer form a plurality of pixels. Each of the plurality of pixels includes an avalanche multiplication region, a charge distribution region, a first charge transfer region, and a second charge transfer region in the semiconductor layer. Each of the plurality of pixels includes a photogate electrode, a first transfer gate electrode, and a second transfer gate electrode in the electrode layer. The avalanche multiplication region is continuous over the plurality of pixels or reaches a trench formed in the semiconductor layer so as to separate the plurality of pixels from each other.

Abstract: The present embodiment relates to a distance sensor configured to inject an equal amount of current into storage nodes coupled, respectively, to charge collection regions where charges of a photosensitive region is distributed by driving of first and second transfer electrodes and obtain a distance to an object based on difference information on charge amounts of the respective storage nodes. Saturation caused by disturbance light of each storage node is avoided by injecting the equal amount of current to each storage node, and the difference information on the charge amounts of the respective storage nodes, which is not easily affected by the current injection, is obtained by driving the first and second transfer electrodes according to the plurality of frames representing the electrode drive pattern, respectively.

Abstract: A range sensor includes a silicon substrate and a transfer electrode. The silicon substrate includes a first principal surface and a second principal surface opposing each other. The silicon substrate is provided with a charge generation region configured to generate a charge in response to incident light and a charge collection region configured to collect charges from the charge generation region, on the first principal surface side. The transfer electrode is disposed between the charge generation region and the charge collection region on the first principal surface. A region of the second principal surface corresponding at least to the charge generation region is formed with a plurality of protrusions. The plurality of protrusions includes a slope inclined with respect to a thickness direction of the silicon substrate. A (111) plane of the silicon substrate is exposed as the slope at the protrusion. A height of the protrusion is 200 nm or more.

Abstract: The present embodiment relates to a distance sensor that reduces a difference in amounts of current injected into each of plural charge collection regions prepared for one photosensitive region in order to avoid saturation caused by disturbance light. A current injection circuit injecting current into each charge collection region includes a voltage generation circuit generating a control voltage for adjustment of the injected current amount, and the voltage generation circuit generates the control voltage corresponding to a large amount of charge between the charge amounts of storage nodes coupled, respectively, to the charge collection regions. Meanwhile, a cascode device is disposed between a transistor configured to adjust the amount of current according to the control voltage and the storage node, and a potential of a current output end of the transistor and a potential of the storage node are separated.

Abstract: In accordance with an irradiation position of pulsed light, a selecting unit outputs a first transfer signal to a first transfer electrodes and outputs a second transfer signal to a second transfer electrodes, to allow signal charges to flow into first and second signal charge-collecting regions of a pixel corresponding to the irradiation position, and outputs a third transfer signal to a third transfer electrodes to allow unnecessary charges to flow into an unnecessary charge-discharging regions of a pixel other than the pixel corresponding to the irradiation position. An arithmetic unit reads out signals corresponding to respective quantities of signal charges collected in the first and second signal charge-collecting regions of the pixel selected by the selecting unit, and calculates a distance to an object based on a ratio between a quantity of signal charges collected in the first signal charge-collecting regions and a quantity of signal charges collected in the second signal charge-collecting regions.

Abstract: A range sensor includes a silicon substrate and a transfer electrode. The silicon substrate includes a first principal surface and a second principal surface opposing each other. The silicon substrate is provided with a charge generation region configured to generate a charge in response to incident light and a charge collection region configured to collect charges from the charge generation region, on the first principal surface side. The transfer electrode is disposed between the charge generation region and the charge collection region on the first principal surface. A region of the second principal surface corresponding at least to the charge generation region is formed with a plurality of protrusions. The plurality of protrusions includes a slope inclined with respect to a thickness direction of the silicon substrate. A (111) plane of the silicon substrate is exposed as the slope at the protrusion. A height of the protrusion is 200 nm or more.

Abstract: The processing unit causes a light source unit to emit modulated light in one or more emission periods in a plurality of charge transfer cycles within a frame period from connection of an accumulating region to a reset potential to next connection of the accumulating region to the reset potential by controlling a reset switch, and increases the number of emission periods per charge transfer cycle within one frame period. The processing unit obtains, from a sensor unit, a plurality of read values corresponding to a charge amount accumulated in the accumulating region at an alternate point with the plurality of charge transfer cycles, in each of a plurality of read cycles corresponding to each of the plurality of charge transfer cycles. The processing unit calculates the distance based on the plurality of obtained read values.

Abstract: The present embodiment relates to a distance sensor that reduces a difference in amounts of current injected into each of plural charge collection regions prepared for one photosensitive region in order to avoid saturation caused by disturbance light. A current injection circuit injecting current into each charge collection region includes a voltage generation circuit generating a control voltage for adjustment of the injected current amount, and the voltage generation circuit generates the control voltage corresponding to a large amount of charge between the charge amounts of storage nodes coupled, respectively, to the charge collection regions. Meanwhile, a cascode device is disposed between a transistor configured to adjust the amount of current according to the control voltage and the storage node, and a potential of a current output end of the transistor and a potential of the storage node are separated.

Abstract: The photosensitive region includes a first impurity region and a second impurity region having a higher impurity concentration than that of the first impurity region. The photosensitive region includes one end positioned away from the transfer section in the second direction and another end positioned closer to the transfer section in the second direction. A shape of the second impurity region in plan view is line-symmetric with respect to a center line of the photosensitive region along the second direction. A width of the second impurity region in the first direction increases in a transfer direction from the one end to the other end. An increase rate of the width of the second impurity region in each of sections, obtained by dividing the photosensitive region into n sections in the second direction, becomes gradually higher in the transfer direction. Here, n is an integer of two or more.

Abstract: A ranging method uses a light source and a range sensor. The range sensor includes a charge-generating area and first and second charge-accumulating areas. Charges generated in the charge-generating area are transferred to the first charge-accumulating area during a first period so as to be accumulated in the first charge-accumulating area and the second charge-accumulating area during a second period so as to be accumulated in the second charge-accumulating area. A distance d to an object OJ is arithmetized based on a quantity of charges accumulated in the first charge-accumulating area and a quantity of charges accumulated in the second charge-accumulating area. When pulse light is emitted from the light source, the pulse light whose light-intensity stable period within the emission period of the pulse light is set in advance to be longer than each of the first and second periods is emitted from the light source.

Abstract: In a range image sensor, a plurality of range sensors are disposed in a one-dimensional direction. The plurality of range sensors include a photogate electrode, first and second signal charge accumulating regions disposed on one side of the photogate electrode, third and fourth signal charge accumulating regions disposed on the other side, first transfer electrodes for making charge flow into the first and fourth signal charge accumulating regions in response to a first transfer signal, and second transfer electrodes for making charge flow into the second and third signal charge accumulating regions in response to a second transfer signal.

Abstract: The present embodiment relates to a distance sensor configured to inject an equal amount of current into storage nodes coupled, respectively, to charge collection regions where charges of a photosensitive region is distributed by driving of first and second transfer electrodes and obtain a distance to an object based on difference information on charge amounts of the respective storage nodes. Saturation caused by disturbance light of each storage node is avoided by injecting the equal amount of current to each storage node, and the difference information on the charge amounts of the respective storage nodes, which is not easily affected by the current injection, is obtained by driving the first and second transfer electrodes according to the plurality of frames representing the electrode drive pattern, respectively.