Abstract: Provided is an illumination appliance (1) that illuminates in a direction opposite a direction towards a mounting face (C) thereof, with radiation light of light sources (5) installed on a main-body housing (2) mounted on the mounting face (C), wherein the illumination appliance (1) is equipped with a light-guiding plate (11) that surrounds the outer circumference of the main-body housing (2) and protrudes out in the diameter direction thereof, has a light incident face (11a), and guides light in the diameter direction. Light radiated from the light sources (5) enters the light-guiding plate (11) from the light incident face (11a) thereof, and light radiated from the light-guiding plate (11) illuminates the mounting face (C).

Abstract: Provided is an illumination appliance (1) that illuminates in a direction opposite a direction towards a mounting face (C) thereof, with radiation light of light sources (5) installed on a main-body housing (2) mounted on the mounting face (C), wherein the illumination appliance (1) is equipped with a light-guiding plate (11) that surrounds the outer circumference of the main-body housing (2) and protrudes out in the diameter direction thereof, has a light incident face (11a), and guides light in the diameter direction. Light radiated from the light sources (5) enters the light-guiding plate (11) from the light incident face (11a) thereof, and light radiated from the light-guiding plate (11) illuminates the mounting face (C).

Abstract: An adapter is hooked to a ceiling socket located on the ceiling. Any one of first ring material and second ring material fixed to a chassis is interlocked to the adapter, to install the lighting apparatus on the ceiling. A circuit board is connected to a sensor board on which an illuminance sensor is mounted. The illuminance sensor outputs electric signals corresponding to the detected illuminance. A control unit adjusts the brightness of light emitted from a LED module, on the basis of the illuminance detected by the illuminance sensor. The illuminance sensor is fixed to the chassis in such a manner that it is inclined from a rotation axis about which the chassis is rotated.

Abstract: A lighting apparatus includes a LED module provided at the central side of a chassis and a reflection sheet reflecting light emitted from the LED module. The LED module emits light to the outer edge portion of the chassis and then the light is reflected on the reflection sheet to perform illumination so that glare can be reduced. Then, the light emitted from the LED module is reflected on the reflection sheet in many directions so that a substantially uniform illuminated light with less illumination unevenness can be achieved. The LED module is not arranged at the outer edge portion of the chassis so that moment acting on the chassis can be reduced. Therefore, the deformation of chassis can be prevented.

Abstract: A semiconductor light-receiving module includes a semiconductor light-receiving element and an incident light direction device. The semiconductor light-receiving element includes a substrate, at least a light absorbing layer and an upper cladding layer formed sequentially on the substrate, a light incident facet formed at least at one facet of the substrate and the light absorbing layer, and electrodes which output an electric signal generated by absorption of the light entering from the light incident facet in the light absorbing layer. The incident light direction device directs to irradiate the light obliquely to the light incident facet of the semiconductor light-receiving element, and to cause at least part of the light to irradiate the light absorbing layer at the light incident facet.

Abstract: A semiconductor light-receiving module includes a semiconductor light-receiving element and an incident light direction device. The semiconductor light-receiving element includes a substrate, at least a light absorbing layer and an upper cladding layer formed sequentially on the substrate, a light incident facet formed at least at one facet of the substrate and the light absorbing layer, and electrodes which output an electric signal generated by absorption of the light entering from the light incident facet in the light absorbing layer. The incident light direction device directs to irradiate the light obliquely to the light incident facet of the semiconductor light-receiving element, and to cause at least part of the light to irradiate the light absorbing layer at the light incident facet.

Abstract: An image forming apparatus which is small in size and can be assembled in a shorter time is provided. The image formimg apparatus includes a support section for supporting a carriage and a common frame including a support section for supporting an image sensor. The common frame is realized by integral molding with resin, whereby it is possible to form the common frame in one process, compared with when a frame for the carriage and a frame for the image sensor are individually formed. Further, using the common frame eliminates need to assemble frames with different functions into one piece. As a result, the common frame can be formed at low cost and in a small size, and time spent for assemble of the image forming apparatus can be shortened.

Abstract: Sheets of recording paper are stacked and put on a push-up plate, and the uppermost recording paper is moved by pickup rollers and is separated by separation pawls. The separated recording paper is further moved by the pickup rollers so as to be carried out to the conveyance path between an upper guide and a lower guide. Notches are provided in those regions of the lower guide which correspond to the corner parts of the recording paper. Owing to the notches, the corner parts of the recording paper deformed by the separation pawls do not come into touch with the lower guide, so that the bending and jamming of the recording paper can be prevented from occurring.

Abstract: A lower cladding layer is laminated on a substrate and constituted of at least one layer. A light absorption layer is laminated on the lower cladding layer. An upper cladding layer is laminated above the light absorption layer and constituted of at least one layer. A light incident end surface is provided on at least one of the substrate and the lower cladding layer, and, when a light is made incident at a predetermined angle, enables the light to be absorbed in the light absorption layer and to be output as a current. An equivalent refractive index of the at least one of the substrate and the lower cladding layer is larger than that of the upper cladding layer. The predetermined angle is an angle enabling a light incident into the light absorption layer to be reflected at a lower surface of the upper cladding layer.

Abstract: A sequential mesa type avalanche photodiode (APD) includes a semiconductor substrate and a sequential mesa portion formed on the substrate. In the sequential mesa portion, a plurality of semiconductor layers, including a light absorbing layer and a multiplying layer, are laminated by epitaxial growth. In the plurality of semiconductor layers, a pair of semiconductor layers forming a pn junction is included. The carrier density of a semiconductor layer which is near to the substrate among the pair of semiconductor layers is larger than the carrier density of a semiconductor layer which is far from the substrate among the pair of semiconductor layers. In the APD, light-receiving current based on movement of electrons and positive holes generated in the sequential mesa portion when light is incident from the substrate toward the light absorbing layer is larger at a central portion than at a peripheral portion of the sequential mesa portion.

Abstract: A semiconductor light-receiving module includes a semiconductor light-receiving element and an incident light direction device. The semiconductor light-receiving element includes a substrate, at least a light absorbing layer and an upper cladding layer formed sequentially on the substrate, a light incident facet formed at least at one facet of the substrate and the light absorbing layer, and electrodes which output an electric signal generated by absorption of the light entering from the light incident facet in the light absorbing layer. The incident light direction device directs to irradiate the light obliquely to the light incident facet of the semiconductor light-receiving element, and to cause at least part of the light to irradiate the light absorbing layer at the light incident facet.

Abstract: A semiconductor light-receiving module includes a semiconductor light-receiving element and an incident light direction device. The semiconductor light-receiving element includes a substrate, at least a light absorbing layer and an upper cladding layer formed sequentially on the substrate, a light incident facet formed at least at one facet of the substrate and the light absorbing layer, and electrodes which output an electric signal generated by absorption of the light entering from the light incident facet in the light absorbing layer. The incident light direction device directs to irradiate the light obliquely to the light incident facet of the semiconductor light-receiving element, and to cause at least part of the light to irradiate the light absorbing layer at the light incident facet.

Abstract: A semiconductor light-receiving module includes a semiconductor light-receiving element and an incident light direction device. The semiconductor light-receiving element includes a substrate, at least a light absorbing layer and an upper cladding layer formed sequentially on the substrate, a light incident facet formed at least at one facet of the substrate and the light absorbing layer, and electrodes which output an electric signal generated by absorption of the light entering from the light incident facet in the light absorbing layer. The incident light direction device directs to irradiate the light obliquely to the light incident facet of the semiconductor light-receiving element, and to cause at least part of the light to irradiate the light absorbing layer at the light incident facet.

Abstract: A key device has a plurality of peripheral key tops arranged around a center key top so that the key tops, when pressed, operate switches arranged below them respectively. The center key top is essentially supported by center hinges extending from a center frame provided around the center key top, and the peripheral key tops are provided above the center frame and are each elastically supported by peripheral hinges extending from a peripheral frame provided around the peripheral key tops.

Abstract: A sequential mesa type avalanche photodiode (APD) comprises a semiconductor substrate and a sequential mesa portion formed on the substrate. In the sequential mesa portion, a plurality of semiconductor layers, including a light absorbing layer and a multiplying layer, are laminated by epitaxial growth. In the plurality of semiconductor layers, a pair of semiconductor layers forming a pn junction is included. The carrier density of a semiconductor layer which is near to the substrate among the pair of semiconductor layers is larger than the carrier density of a semiconductor layer which is far from the substrate among the pair of semiconductor layers. In the APD, light-receiving current based on movement of electrons and positive holes generated in the sequential mesa portion when light is incident from the substrate toward the light absorbing layer is larger at a central portion than at a peripheral portion of the sequential mesa portion.

Abstract: A sequential mesa type avalanche photodiode (APD) comprises a semiconductor substrate and a sequential mesa portion formed on the substrate. In the sequential mesa portion, a plurality of semiconductor layers, including a light absorbing layer and a multiplying layer, are laminated by epitaxial growth. In the plurality of semiconductor layers, a pair of semiconductor layers forming a pn junction is included. The carrier density of a semiconductor layer which is near to the substrate among the pair of semiconductor layers is larger than the carrier density of a semiconductor layer which is far from the substrate among the pair of semiconductor layers. In the APD, light-receiving current based on movement of electrons and positive holes generated in the sequential mesa portion when light is incident from the substrate toward the light absorbing layer is larger at a central portion than at a peripheral portion of the sequential mesa portion.

Abstract: A sequential mesa type avalanche photodiode (APD) comprises a semiconductor substrate and a sequential mesa portion formed on the substrate. In the sequential mesa portion, a plurality of semiconductor layers, including a light absorbing layer and a multiplying layer, are laminated by epitaxial growth. In the plurality of semiconductor layers, a pair of semiconductor layers forming a pn junction is included. The carrier density of a semiconductor layer which is near to the substrate among the pair of semiconductor layers is larger than the carrier density of a semiconductor layer which is far from the substrate among the pair of semiconductor layers. In the APD, light-receiving current based on movement of electrons and positive holes generated in the sequential mesa portion when light is incident from the substrate toward the light absorbing layer is larger at a central portion than at a peripheral portion of the sequential mesa portion.

Abstract: A sequential mesa type avalanche photodiode (APD) comprises a semiconductor substrate and a sequential mesa portion formed on the substrate. In the sequential mesa portion, a plurality of semiconductor layers, including a light absorbing layer and a multiplying layer, are laminated by epitaxial growth. In the plurality of semiconductor layers, a pair of semiconductor layers forming a pn junction is included. The carrier density of a semiconductor layer which is near to the substrate among the pair of semiconductor layers is larger than the carrier density of a semiconductor layer which is far from the substrate among the pair of semiconductor layers. In the APD, light-receiving current based on movement of electrons and positive holes generated in the sequential mesa portion when light is incident from the substrate toward the light absorbing layer is larger at a central portion than at a peripheral portion of the sequential mesa portion.

Abstract: Sheets of recording paper are stacked and put on a push-up plate, and the uppermost recording paper is moved by pickup rollers and is separated by separation pawls. The separated recording paper is further moved by the pickup rollers so as to be carried out to the conveyance path between an upper guide and a lower guide. Notches are provided in those regions of the lower guide which correspond to the corner parts of the recording paper. Owing to the notches, the corner parts of the recording paper deformed by the separation pawls do not come into touch with the lower guide, so that the bending and jamming of the recording paper can be prevented from occurring.

Abstract: A semiconductor light receiving element has an n electrode, an n-type semiconductor doped layer or a non-doped layer provided above the n electrode, a semiconductor light absorbing layer provided above the n-type semiconductor doped layer or the non-doped layer, a p-type semiconductor doped layer provided above the semiconductor light absorbing layer, and a p electrode provided above the p-type semiconductor doped layer. The semiconductor light absorbing layer has at least two layer portions doped to p-type, and a spacer layer for acceleration which is formed from a semiconductor material sandwiched by the two layer portions and which makes electrons and positive holes generated by incident light being absorbed at the semiconductor light absorbing layer accelerate and run.