Abstract: Provided is a chemical mechanical polishing (CMP) pad conditioner including a substrate including a plurality of protrusions formed on at least one surface thereof and made of ceramic or hard metal alloy. The plurality of protrusions may be formed through laser processing so as not to have angled edges on an upper end and an inclined side thereof. The chemical mechanical polishing pad conditioner further includes a diamond thin film deposited so as to cover the plurality of protrusions, wherein the diamond thin film includes a rough polishing surface on which micro protrusions having a size of several ?m are formed.

Abstract: In a sensing device and a method for sending a light by using the same, the sensing device includes: a lower panel; an upper panel facing the lower panel; a liquid crystal layer disposed between the lower panel and the upper panel; an infrared ray sensor formed in at least one of the lower panel and the upper panel; and a visible ray sensor formed in at least one of the lower panel and the upper panel. The sensing device simultaneously includes the infrared ray sensor and the visible ray sensor such that a touch sensing function or an image sensing function having high reliability may be realized.

Abstract: A liquid crystal display includes pixels which is disposed in row and column directions, respectively includes pixel electrodes, and arranged along a first pixel column to a sixth pixel column, gate lines including pairs of two adjacent gate lines for each pixel row in the row direction, data lines including a first data line at a left side of the first pixel column, a second data line between the second and third pixel columns, a third data line between the fourth and fifth pixel columns, and a fourth data line at a right side of the sixth pixel column; and common voltage lines including a first common voltage line between the first and second pixel columns, a second common voltage line between the third and fourth pixel columns, and a third common voltage line between the fifth and sixth pixel columns.

Abstract: A display device includes: a first substrate; a photo transistor on the first substrate; and a switching transistor connected to the photo transistor. The photo transistor includes a light blocking film on the first substrate, a first gate electrode on the light blocking film and in contact with the light blocking film, a first semiconductor layer on the first gate electrode and overlapping the light blocking film, and a first source electrode and a first drain electrode on the first semiconductor layer. The switching transistor includes a second gate electrode on the first substrate, a second semiconductor layer on the second gate electrode and overlapping the second gate electrode, and a second source electrode and a second drain electrode on the second semiconductor layer. The first semiconductor layer and the second semiconductor layer are at a same layer of the display device, and each includes crystalline silicon germanium.

Abstract: An LCD device includes: a first substrate; a gate line and a data line on the first substrate; at least one TFT connected to the gate and data lines and comprising source and drain electrodes; a pixel electrode connected to the TFT; a second substrate; a liquid crystal layer between the first and second substrates; a common electrode on one of the first and second substrates; a black matrix disposed on one of the first and second substrates and configured to at least partially define a pixel region; a color filter disposed to correspond to the pixel region; and a cell gap adjustment layer disposed on one of the first and second substrates and positioned so as to form different cell gaps within one pixel region.

Abstract: A mother substrate for a display device, includes an upper mother substrate and a lower mother substrate each divided into, from among areas of the display device, a display area which displays an image, a sealing area which surrounds the display area and in which a seal material is disposed, and an outer area disposed outside the sealing area, in which a pad area is disposed and from which a signal is applied to the display area; and a spacer between the upper mother substrate and the lower mother substrate, and in the outer area. The spacer is disposed at a cutting line at which the upper mother substrate and the lower mother substrate are separated from the mother substrate to form the display device.

Abstract: A thin-film transistor substrate includes a base substrate, a gate line, a data line, a thin-film transistor, an organic insulating pattern and a common electrode. The base substrate includes a plurality of pixel areas. The gate line is disposed on the base substrate, and the gate line is extended in a first direction. The data line is disposed on the gate line, and the data line is extended in a second direction crossing the first direction. The thin-film transistor is connected to the gate line and the data line. The organic insulating pattern covers the data line and the thin-film transistor, and the organic insulating pattern includes an opening overlapping with the pixel areas. The common electrode is disposed on the base substrate. Thus, an organic insulating layer in a pixel area may be partially removed, so that a yellowish screen may be prevented, thereto improve a display quality.

Abstract: A liquid crystal display includes a first substrate, a gate line and a data line disposed on the first substrate, a first insulating layer disposed on the gate line and the data line, a first electrode disposed on the first insulating layer and having a flat form in a planar shape, a second insulating layer disposed on the first electrode, and a second electrode disposed on the second insulating layer and including a plurality of branch electrodes, where a width of a branch electrode of the plurality of branch electrodes is equal to or less than about 2 micrometers.

Abstract: Provided are a photo sensor, a display device including the same, and a driving method thereof. The photo sensor includes: an amplifying element including an input terminal coupled to a scan line for receiving a scan signal, an output terminal configured to output a sensing signal, and a control terminal connected to a first node; a sensing capacitor connected with the first node; a photosensitive sensing element including a control terminal connected with a terminal of a first control signal, an output terminal connected with the first node, and an input terminal; and a reset element connected with the output terminal of the amplifying element and resetting the output terminal of the amplifying element to second voltage according to a reset control signal.

Abstract: The present invention relates to a cathode active material for a lithium secondary battery and a preparation method thereof, and particularly, to a cathode active material for a lithium secondary battery having improved battery characteristics because of manganese phosphate uniformly coated on the surface of a Ni-rich cathode active material, and a preparation method thereof. According to the present invention, because manganese phosphate is uniformly coated on the surface of the Ni-rich cathode active material, a side reaction of the electrolyte is inhibited and a lithium secondary battery having excellent power characteristics, high temperature cycle life characteristics, and thermal stability can be prepared.

Abstract: The present invention relates to a thin film transistor, a thin film transistor array panel, and a manufacturing method thereof. A thin film transistor according to an exemplary embodiments of the present invention includes: a gate electrode; a gate insulating layer positioned on or under the gate electrode; a channel region overlapping the gate electrode, the gate insulating layer interposed between the channel region and the gate electrode; and a source region and a drain region, facing each other with respect to the channel region, positioned in the same layer as the channel region, and connected to the channel region, wherein the channel region, the source region, and the drain region comprise an oxide semiconductor, and wherein a carrier concentration of the source region and the drain region is larger than a carrier concentration of the channel region.

Abstract: The present invention relates to a thin film transistor, a thin film transistor array panel, and a manufacturing method thereof. A thin film transistor according to an exemplary embodiments of the present invention includes: a gate electrode; a gate insulating layer positioned on or under the gate electrode; a channel region overlapping the gate electrode, the gate insulating layer interposed between the channel region and the gate electrode; and a source region and a drain region, facing each other with respect to the channel region, positioned in the same layer as the channel region, and connected to the channel region, wherein the channel region, the source region, and the drain region comprise an oxide semiconductor, and wherein a carrier concentration of the source region and the drain region is larger than a carrier concentration of the channel region.

Abstract: A method of muxing data by using clock signals having different timings and an apparatus performing the method are provided. Storing and muxing (or dividing) the data are simultaneously performed. The apparatus includes a first latch circuit arranging data blocks, which are input in series, in parallel in response to non-overlapping latch control signals and a second latch circuit latching the data blocks arranged in parallel simultaneously in response to a clock signal.

Abstract: A liquid crystal display according to an exemplary embodiment of the invention includes a substrate, a gate line and a data line disposed on the substrate, a first passivation layer disposed on the gate line and the data line, a first electrode disposed on the first passivation layer, a second passivation layer disposed on the first electrode, and a second electrode disposed on the second passivation layer and including a plurality of first cutouts and a plurality of branch electrodes defined by the plurality of first cutouts, wherein the second passivation layer has a second cutout overlapping a portion of the plurality of first cutouts, and the second cutout is defined close to the end of the first cutout.

Abstract: A thin film transistor array panel includes: a substrate; a first gate electrode on the substrate; a gate insulating layer on the gate electrode; a semiconductor on the gate insulating layer; an etch stopper on a channel of the semiconductor; a source electrode and a drain electrode on the semiconductor and facing each other with respect to the first gate electrode; and a second gate electrode on the channel of the semiconductor and in a same layer as the source electrode and the drain electrode. The second gate electrode is electrically separated from the source electrode and the drain electrode.

Abstract: A liquid crystal display includes a first substrate, a first electrode disposed on the first substrate, a second electrode which is disposed on the first substrate and overlaps the first electrode, an insulating layer interposed between the first electrode and the second electrode, a first alignment layer disposed on the first electrode and the second electrode, a second substrate facing the first substrate, and a second alignment layer disposed on the second substrate, where a first resistivity value of the first alignment layer is smaller than a second resistivity value of the second alignment layer.

Abstract: A thin film transistor and a manufacturing method thereof. The thin film transistor includes: a gate electrode; a gate insulating layer disposed on the gate electrode; a first semiconductor disposed on the gate insulating layer; a second semiconductor disposed on the first semiconductor and having a different plane shape from the first semiconductor; and a source electrode and a drain electrode that are disposed on the second semiconductor and face each other.

Abstract: Disclosed are compositions and methods for producing a cathode for a secondary battery, where a fluorophosphate of the formula LixNa2-xMnPO4F is used as an electrode material. LixNa2-xMnPO4F is prepared by partially substituting a sodium site with lithium through a chemical method. LixNa2-xMnPO4F prepared according to the invention provides a cathode material for a lithium battery that has improved electrochemical activity.

Abstract: A display substrate includes a data line, a main gate line, and a first sub-pixel electrode formed on a base substrate. The display substrate further includes a first switching element connected to the data line. The display substrate further includes a second switching element connected to the data line, the main gate line, and a second sub-pixel electrode spaced apart from the first sub-pixel electrode. The display substrate further includes a third switching element connected to the data line and a secondary gate line adjacent to the main gate line. The display substrate further includes a shielding line spaced apart from the first and second sub-pixel electrodes, the shielding line overlapping the data line and receiving a reference voltage. The display substrate further includes an auxiliary electrode extending from the shielding line and overlapping an end electrode connected to the third switching element.

Abstract: Provided is a gate driver including a plurality of stages respectively transferring gate-on voltages to a plurality of gate lines. The stage includes a pull-up driver including a first transistor, the first transistor having a control terminal connected to a first node, an output terminal connected to a output terminal of a present stage and an input terminal connected to a first clock terminal, a first node pull-down portion including a second transistor, the second transistor having an input terminal connected to a buffer node, an output terminal connected to the first node and a control terminal connected to a second node, and a buffer node stabilizer including a third transistor, the third transistor having an input terminal and a control terminal connected to the first node, and an output terminal connected to the buffer node.