Abstract: The present invention relates to a positive electrode active material and a lithium secondary battery using a positive electrode containing the positive electrode active material. More particularly, the present invention relates to a positive electrode active material that is able to solve a problem of increased resistance according to an increase in Ni content by forming a charge transport channel in a lithium composite oxide and a lithium secondary battery using a positive electrode containing the positive electrode active material.

Abstract: In an embodiment of the present inventive concept, there is provided an 0 smoothing method performed on the basis of deep gradient prior information to improve sharpness of an image by an image quality improving device, and the method comprises: a gradient-improved image generation step of generating a gradient-improved image by minimizing the gradients of pixels of an original image, by the image quality improving device; and a smoothing-improved image generation step of generating a smoothing-improved image smoothing-processed through one-step (0) estimation on the gradient-improved image, by the image quality improving device.

Abstract: The disclosed gas-liquid separation device separates, from a liquid, gas mixed in the liquid. The gas-liquid separation device includes a body configured to allow mixed fluid to be introduced into a longitudinally central portion thereof, and to have a cylindrical structure having an inner diameter gradually reduced as the body extends from the central portion to opposite ends thereof, a pair of gas discharge pipes respectively provided at the opposite ends of the body and configured to discharge, to an exterior of the body, gas separated from the mixed fluid in an interior of the body, and a pair of liquid discharge pipes respectively provided at the opposite ends of the body and configured to discharge, to the exterior of the body, the mixed fluid from which the gas has been separated.

Abstract: A gas-liquid separation device has a structure capable of increasing gas-liquid separation performance. The gas-liquid separation device includes: a housing including a fluid inlet passage, a liquid discharge passage, and a gas discharge passage; and a gas-liquid separation unit that is mounted inside the housing, disposed at a rear side of the fluid inlet passage. The gas-liquid separation unit separates a mixed fluid into a liquid and a gas by inducing rotation of the mixed fluid introduced into the housing through the fluid inlet passage. The gas-liquid separation device further includes a flow stabilization member provided at a rear end of the gas-liquid separation unit and configured to maintain a flow state of the liquid and the gas separated by the gas-liquid separation unit.

Abstract: A multilayer ceramic capacitor includes a ceramic body including a dielectric layer and first and second internal electrodes disposed to oppose each other with the dielectric layer interposed therebetween, and first and second external electrodes disposed outside of the ceramic body and connected to the first and second internal electrodes, respectively. The ceramic body includes an active portion including of the first and second internal electrodes disposed to oppose each other with the dielectric layer interposed therebetween to form capacitance, and a cover portion disposed in upper and lower portions of the active portion. The cover portion has a larger number of pores than the dielectric layer of the active portion, and the cover portion includes a ceramic-polymer composite filled with a polymer in the pores of the cover portion.

Abstract: A multilayer electronic component includes: a body including first and second dielectric layers alternately disposed in a first direction; and external electrodes disposed on opposing end surfaces, respectively. A first internal electrode exposed to a first end surface and a first dummy pattern spaced apart from the first internal electrode and exposed to a second end surface are disposed on the first dielectric layer. A second internal electrode exposed to the second end surface and a second dummy pattern spaced apart from the second internal electrode and exposed to the first end surface are disposed on the second dielectric layer. The first and second internal electrodes include first and second main portions, respectively, and the first main portion and the second main portion are arranged in a staggered manner in a width direction.

Abstract: A multilayer ceramic capacitor includes a ceramic body including a dielectric layer and first and second internal electrodes disposed to oppose each other with the dielectric layer interposed therebetween, and first and second external electrodes disposed outside of the ceramic body and connected to the first and second internal electrodes, respectively. The ceramic body includes an active portion including of the first and second internal electrodes disposed to oppose each other with the dielectric layer interposed therebetween to form capacitance, and a cover portion disposed in upper and lower portions of the active portion. The cover portion has a larger number of pores than the dielectric layer of the active portion, and the cover portion includes a ceramic-polymer composite filled with a polymer in the pores of the cover portion.

Abstract: A conductive paste includes a core including a first metal and a shell including a second metal having a melting point higher than that of the first metal and enclosing a surface of the core. A multilayer ceramic component includes an external electrode having a sintered electrode layer made of the conductive paste.

Abstract: A multilayer ceramic capacitor includes a ceramic body including a dielectric layer and first and second internal electrodes disposed to oppose each other with the dielectric layer interposed therebetween, and first and second external electrodes disposed outside of the ceramic body and connected to the first and second internal electrodes, respectively. The ceramic body includes an active portion including of the first and second internal electrodes disposed to oppose each other with the dielectric layer interposed therebetween to form capacitance, and a cover portion disposed in upper and lower portions of the active portion. The cover portion has a larger number of pores than the dielectric layer of the active portion, and the cover portion includes a ceramic-polymer composite filled with a polymer in the pores of the cover portion.

Abstract: A multilayer ceramic capacitor includes a ceramic body including a dielectric layer and first and second internal electrodes disposed to oppose each other with the dielectric layer interposed therebetween, and first and second external electrodes disposed outside of the ceramic body and connected to the first and second internal electrodes, respectively. The ceramic body includes an active portion including of the first and second internal electrodes disposed to oppose each other with the dielectric layer interposed therebetween to form capacitance, and a cover portion disposed in upper and lower portions of the active portion. The cover portion has a larger number of pores than the dielectric layer of the active portion, and the cover portion includes a ceramic-polymer composite filled with a polymer in the pores of the cover portion.

Abstract: A multilayer ceramic capacitor includes a ceramic body including a dielectric layer and first and second internal electrodes disposed to oppose each other with the dielectric layer interposed therebetween, and first and second external electrodes disposed outside of the ceramic body and connected to the first and second internal electrodes, respectively. The ceramic body includes an active portion including of the first and second internal electrodes disposed to oppose each other with the dielectric layer interposed therebetween to form capacitance, and a cover portion disposed in upper and lower portions of the active portion. The cover portion has a larger number of pores than the dielectric layer of the active portion, and the cover portion includes a ceramic-polymer composite filled with a polymer in the pores of the cover portion.

Abstract: A multilayer electronic component includes: a body including first and second dielectric layers alternately disposed in a first direction; and external electrodes disposed on opposing end surfaces, respectively. A first internal electrode exposed to a first end surface and a first dummy pattern spaced apart from the first internal electrode and exposed to a second end surface are disposed on the first dielectric layer. A second internal electrode exposed to the second end surface and a second dummy pattern spaced apart from the second internal electrode and exposed to the first end surface are disposed on the second dielectric layer. The first and second internal electrodes include first and second main portions, respectively, and the first main portion and the second main portion are arranged in a staggered manner in a width direction.

Abstract: A multilayer ceramic capacitor includes a ceramic body including a dielectric layer and first and second internal electrodes disposed to oppose each other with the dielectric layer interposed therebetween, and first and second external electrodes disposed outside of the ceramic body and connected to the first and second internal electrodes, respectively. The ceramic body includes an active portion including of the first and second internal electrodes disposed to oppose each other with the dielectric layer interposed therebetween to form capacitance, and a cover portion disposed in upper and lower portions of the active portion. The cover portion has a larger number of pores than the dielectric layer of the active portion, and the cover portion includes a ceramic-polymer composite filled with a polymer in the pores of the cover portion.

Abstract: Described herein is a semiconductor light emitting device. The semiconductor light emitting device comprises: an n-type semiconductor layer; a V-pit formed through at least part of the n-type semiconductor layer; an active layer disposed on the n-type semiconductor layer and filling the V-pit; and a p-type semiconductor layer disposed on the active layer, wherein the active layer includes a plurality of layers and part of the plural layers has a flat shape on the V-pit.

Abstract: Described herein is a semiconductor light emitting device. The semiconductor light emitting device comprises: an n-type semiconductor layer; a V-pit formed through at least part of the n-type semiconductor layer; an active layer disposed on the n-type semiconductor layer and filling the V-pit; and a p-type semiconductor layer disposed on the active layer, wherein the active layer includes a plurality of layers and part of the plural layers has a flat shape on the V-pit.

Abstract: A light emitting element comprises: a substrate including protrusions; and a light emitting structure located on the substrate. The protrusions are disposed in a honeycomb pattern and include a first protrusion and second to seventh protrusions which are adjacent to the first protrusion and spaced equidistant from the first protrusions. The angle between a first vector line extending in a direction from the center of the first protrusion toward the center of the second protrusion and a second vector line extending in a direction from the center of the first protrusion to the center of the fourth projection is 120° , the angle between the second vector line and the third vector line extending in a direction from the center of the first projection to the center of the sixth protrusion is 120.

Abstract: Provided are a light-emitting element and a method for preparing same. The method includes a method for growing a p-type semiconductor layer having a low-concentration doping layer, an undoped layer and a high-concentration doping layer. During the growth of the low-concentration doping layer and the high-concentration doping layer, both N2 gas and H2 gas are supplied, whereas, during the growth of the undoped layer, the supply of H2 gas is shut off and N2 gas is supplied. Accordingly, the doping concentration of Mg contained in the undoped layer can be further lowered, and thus, hole mobility within the p-type semiconductor layer can be enhanced.

Abstract: Disclosed herein is a high efficiency light emitting diode. The light emitting diode includes: a semiconductor stack positioned over a support substrate; a reflective metal layer positioned between the support substrate and the semiconductor stack to ohmic-contact a p-type compound semiconductor layer of the semiconductor stack and having a groove exposing the semiconductor stack; a first electrode pad positioned on an n-type compound semiconductor layer of the semiconductor stack; an electrode extension extending from the first electrode pad and positioned over the groove region; and an upper insulating layer interposed between the first electrode pad and the semiconductor stack. In addition, the n-type compound semiconductor layer includes an n-type contact layer, and the n-type contact layer has a Si doping concentration of 5 to 7×1018/cm3 and a thickness in the range of 5 to 10 um.

Abstract: Disclosed herein is a high efficiency light emitting diode. The light emitting diode includes: a semiconductor stack positioned over a support substrate; a reflective metal layer positioned between the support substrate and the semiconductor stack to ohmic-contact a p-type compound semiconductor layer of the semiconductor stack and having a groove exposing the semiconductor stack; a first electrode pad positioned on an n-type compound semiconductor layer of the semiconductor stack; an electrode extension extending from the first electrode pad and positioned over the groove region; and an upper insulating layer interposed between the first electrode pad and the semiconductor stack. In addition, the n-type compound semiconductor layer includes an n-type contact layer, and the n-type contact layer has a Si doping concentration of 5 to 7×1018/cm3 and a thickness in the range of 5 to 10 um.