Abstract: A semiconductor device includes an integrated circuit structure disposed over a substrate and a hydrogen sensing structure disposed over the substrate to be laterally spaced apart from the integrated circuit structure. The integrated circuit structure includes an oxide semiconductor layer. The hydrogen sensing structure includes a hydrogen ion sensing layer containing a resistance change material, and a first sensing electrode layer and a second sensing electrode layer disposed at opposite ends of the hydrogen ion sensing layer. A bottom surface and a top surface of the hydrogen ion sensing layer are arranged to have same levels as a bottom surface and a top surface of the oxide semiconductor layer based on the surface of the substrate, respectively.

Abstract: A semiconductor device may include a color filter array, an optical synapse array including a plurality of light passage paths transferring light incident through the color filter array with independently controlled transmissivities, and an optical-to-digital conversion circuit converting the transferred light through the plurality of light passage paths into digital data.

Abstract: The semiconductor device includes a first channel structure; a first air layer surrounding a side surface of the first channel structure; a first bitline contacting the side surface of the first channel structure; a first wordline contacting a lower portion of the first channel structure; a storage node having one end contacting an upper portion of the first channel structure; a second channel structure contacting an upper portion of the storage node; a second air layer surrounding a side surface of the second channel structure; a second bitline contacting the side surface of the second channel structure; and a second wordline contacting an upper portion of the second channel structure. The first bitline extends in a direction perpendicular to a direction in which the first channel structure extends. The second wordline extends in a direction perpendicular to a direction in which the second channel structure extends.

Abstract: A semiconductor device includes a first bitline extending in a first direction, a first wordline extending in a second direction crossing the first direction, a first active region contacting the first bitline, a back-gate extending parallel to the first wordline, and a storage transistor contacting the first active region. The first active region is disposed between the first wordline and the back-gate, and includes a vertical portion extending in a third direction crossing the first and second directions and a horizontal portion that contacts one end of the vertical portion and the first bitline.

Abstract: A memristor device, a fabricating method thereof, a synaptic device including the memristor device, and a neuromorphic device including the synaptic device are provided. The memristor device includes a first electrode, a second electrode spaced apart from the first electrode, a resistance change layer disposed between the first electrode and the second electrode and including a polymer, and an insertion layer disposed between the first electrode and the resistance change layer and including an oxide. An electrochemical metallization mechanism (ECM) filament is formed in the resistance change layer, and a valence change mechanism (VCM) filament is formed in the insertion layer. The memristor device has a synaptic characteristic according to a change in resistance of the resistance change layer. The insertion layer includes an Al2O3 layer. The insertion layer includes an Al2O3 layer formed by an atomic layer deposition (ALD) process using a temperature of about 200° C. or higher.

Abstract: A semiconductor device includes: a substrate; two heating patterns arranged to be spaced apart from each other over the substrate; two metal oxide patterns respectively positioned over the two heating patterns; two second oxide semiconductor patterns comprising source/drain regions and respectively positioned over the two metal oxide patterns; a first oxide semiconductor pattern forming a channel region positioned between the two second oxide semiconductor patterns; a gate electrode positioned over or below the first oxide semiconductor pattern; and a gate dielectric layer interposed between the gate electrode and the first oxide semiconductor pattern, wherein an oxygen density of the two second oxide semiconductor patterns is smaller than an oxygen density of the first oxide semiconductor pattern.

Abstract: A semiconductor device including a hydrogen test pattern for testing the influence of hydrogen on an insulation layer is disclosed. The semiconductor device includes a target insulation layer shared by a transistor pattern disposed in a first region and a test pattern disposed in a second region. The test pattern includes detection interconnect elements disposed within the target insulation layer, and outputs a test current corresponding to a test voltage provided through the detection interconnect elements.

Abstract: A semiconductor device includes: a substrate; two heating patterns arranged to be spaced apart from each other over the substrate; two metal oxide patterns respectively positioned over the two heating patterns; two second oxide semiconductor patterns comprising source/drain regions and respectively positioned over the two metal oxide patterns; a first oxide semiconductor pattern forming a channel region positioned between the two second oxide semiconductor patterns; a gate electrode positioned over or below the first oxide semiconductor pattern; and a gate dielectric layer interposed between the gate electrode and the first oxide semiconductor pattern, wherein an oxygen density of the two second oxide semiconductor patterns is smaller than an oxygen density of the first oxide semiconductor pattern.

Abstract: A semiconductor device includes a crystalline first oxide semiconductor pattern having at least one etched surface; and a crystalline second oxide semiconductor layer disposed on the etched surface of the first oxide semiconductor pattern. A method for fabricating a semiconductor device includes forming a crystalline first oxide semiconductor layer over a substrate; forming a first oxide semiconductor pattern having an etched side surface by selectively etching the first oxide semiconductor layer; and forming a crystalline second oxide semiconductor layer on the side surface of the first oxide semiconductor pattern.

Abstract: A semiconductor device may include a color filter array, an optical synapse array including a plurality of light passage paths transferring light incident through the color filter array with independently controlled transmissivities, and an optical-to-digital conversion circuit converting the transferred light through the plurality of light passage paths into digital data.

Abstract: A semiconductor device includes: a substrate; two heating patterns arranged to be spaced apart from each other over the substrate; two metal oxide patterns respectively positioned over the two heating patterns; two second oxide semiconductor patterns comprising source/drain regions and respectively positioned over the two metal oxide patterns; a first oxide semiconductor pattern forming a channel region positioned between the two second oxide semiconductor patterns; a gate electrode positioned over or below the first oxide semiconductor pattern; and a gate dielectric layer interposed between the gate electrode and the first oxide semiconductor pattern, wherein an oxygen density of the two second oxide semiconductor patterns is smaller than an oxygen density of the first oxide semiconductor pattern.

Abstract: A memristor device, a fabricating method thereof, a synaptic device including the memristor device, and a neuromorphic device including the synaptic device are provided. The memristor device includes a first electrode, a second electrode spaced apart from the first electrode, a resistance change layer disposed between the first electrode and the second electrode and including a polymer, and an insertion layer disposed between the first electrode and the resistance change layer and including an oxide. An electrochemical metallization mechanism (ECM) filament is formed in the resistance change layer, and a valence change mechanism (VCM) filament is formed in the insertion layer. The memristor device has a synaptic characteristic according to a change in resistance of the resistance change layer. The insertion layer includes an Al2O3 layer. The insertion layer includes an Al2O3 layer formed by an atomic layer deposition (ALD) process using a temperature of about 200° C. or higher.

Abstract: The present disclosure provides a soft memristor for soft neuromorphic system including a substrate, a first electrode layer formed on the substrate, a metal diffusion barrier layer formed on the first electrode layer, a resistive switching material layer formed on the metal diffusion barrier layer, and a second electrode layer formed on the resistive switching material layer.

Abstract: The present disclosure provides a soft memristor for soft neuromorphic system including a substrate, a first electrode layer formed on the substrate, a metal diffusion barrier layer formed on the first electrode layer, a resistive switching material layer formed on the metal diffusion barrier layer, and a second electrode layer formed on the resistive switching material layer.

Abstract: Disclosed are polymer nanofiber sensors for detecting gas, which generates visible color change although a specific gas having a concentration of less than 1 ppm is exposed to the sensor in a short time, in which it is impossible to detect the gas using existing colorimetric sensors, through securing high surface area and porosity, and a method of the same.

Abstract: Disclosed are polymer nanofiber sensors for detecting gas, which generates visible color change although a specific gas having a concentration of less than 1 ppm is exposed to the sensor in a short time, in which it is impossible to detect the gas using existing colorimetric sensors, through securing high surface area and porosity, and a method of the same.