Abstract: An image signal processor includes a threshold value calculator configured to calculate a threshold value for a target pixel based on complexity of a target kernel including the target pixel, an adjacent pixel determiner configured to determine, when the target pixel is a corner pixel, one or more valid pixels of the target kernel and at least one reference pixel located outside the target kernel to be adjacent pixels of the target pixel, and a defect detector configured to determine whether the target pixel is a defective pixel according to a result of comparing a difference value between pixel data of the adjacent pixel and pixel data of the target pixel with the threshold value, wherein the corner pixel is a pixel located at each vertex of the target kernel.

Abstract: Provided are a device and method for converting a natural language query into a structured query language (SQL) query for a database search. The method includes an operation A of labeling natural language queries included in training data, an operation B of converting the natural language queries into second SQL queries by applying the natural language queries to an SQL conversion model, an operation C of verifying the second SQL queries, and an operation D of training the SQL conversion model by comparing the second SQL queries with third SQL queries corresponding to the natural language queries of the training data.

Abstract: Disclosed are a focused ultrasound device and a method for setting an order of focused ultrasound treatment thereof. When using an ultrasound treatment method using mechanical energy, the focused ultrasound device according to an embodiment determines a next focal point position in consideration of at least one previous focal point position of focused ultrasound and thus can minimize thermal increase of an affected area and maximally utilize the mechanical energy.

Abstract: An image signal processor for processing image signals and an image signal processing method for the same are disclosed. The image signal processor includes a directionality determiner configured to determine directionality of a target kernel including a target pixel, based on an angle between directions within the target kernel and a difference in directionality strength between the directions. The image signal processor also includes a pixel corrector configured to correct, when the target kernel has specific directionality according to a result of the directionality determination, the target pixel using pixels arranged in each of a plurality of directions having higher directionality strength than a predetermined directionality strength from among the directions within the target kernel.

Abstract: A semiconductor device includes a substrate, a gate electrode disposed on an upper surface of the substrate, a source region disposed on a first side of the gate electrode, a drain region disposed on a second side of the gate electrode opposite to the first side of the gate electrode in a horizontal direction, and an insulating structure at least partially buried inside the substrate on the substrate. The insulating structure includes a first portion disposed between the substrate and the gate electrode, and a second portion in contact with the drain region. An uppermost surface of the second portion of the insulating structure is lower than an uppermost surface of the first portion of the insulating structure. At least a part of the gate electrode is disposed on the uppermost surface of the second portion of the insulating structure.

Abstract: An image signal processor and an image signal processing method are disclosed. The image signal processor includes a half-edge pattern determination unit configured to determine whether a target kernel including a target pixel corresponds to a half-edge pattern, a half-edge pattern matching unit configured to determine directionality of the target kernel based on a half-edge pattern mask in which a highest weight is assigned to a pixel arranged in one direction from the target pixel when the target kernel corresponds to the half-edge pattern, and a pixel interpolation unit configured to interpolate the target pixel using pixel data of a pixel disposed at a position corresponding to the directionality of the target kernel, wherein the half-edge pattern is a pattern in which a region on one side of the edge crossing the kernel is filled with a texture region and a non-texture region.

Abstract: Disclosed are a focused ultrasound device and a method for setting an order of focused ultrasound treatment thereof. When using an ultrasound treatment method using mechanical energy, the focused ultrasound device according to an embodiment determines a next focal point position in consideration of at least one previous focal point position of focused ultrasound and thus can minimize thermal increase of an affected area and maximally utilize the mechanical energy.

Abstract: Provided herein may be an image processing device and an image processing method. The image processing device may include a determination area manager configured to generate a determination area corresponding to a candidate defective pixel based on externally received pixel values and configured to determine whether the determination area is saturated based on pixel values of white pixels included in the determination area, and a defective pixel manager configured to calculate a reference value based on first pixel values of reference pixels that are set based on whether the white pixels are saturated and to determine whether a candidate defective pixel has a defect, based on both the reference value and second pixel values of determination pixels having a color identical to that of the candidate defective pixel, among pixels included in the determination area.

Abstract: The disclosure relates to a positive electrode active material, a method of preparing the same, and a lithium secondary battery including the same, wherein the positive electrode active material includes a lithium transition metal oxide in which a molar ratio of a manganese (Mn) element is 0.5 or more, and a sum of molar ratios of a sodium (Na) element and a sulfur (S) element satisfies 0<Na+S<0.025.

Abstract: A semiconductor device includes a substrate, a gate electrode disposed on an upper surface of the substrate, a source region disposed on a first side of the gate electrode, a drain region disposed on a second side of the gate electrode opposite to the first side of the gate electrode in a horizontal direction, and an insulating structure at least partially buried inside the substrate on the substrate. The insulating structure includes a first portion disposed between the substrate and the gate electrode, and a second portion in contact with the drain region. An uppermost surface of the second portion of the insulating structure is lower than an uppermost surface of the first portion of the insulating structure. At least a part of the gate electrode is disposed on the uppermost surface of the second portion of the insulating structure.

Abstract: Provided is a monocrystalline cathode active material for a lithium secondary battery, the monocrystalline cathode active material being represented by the Formula of LixPyNi1-a-bCOaAbO2.

Abstract: A power device includes a drift layer of a second conductivity type located on a semiconductor layer of a first conductivity type, a first source region of the second conductivity type and a second source region of the second conductivity type, located on the drift layer to be apart from each other, and a gate electrode on the drift layer between the first and second source regions with a gate insulating layer between the gate electrode and the drift layer, wherein the gate electrode includes a first gate electrode and a second gate electrode adjacent to the first source region and the second source region, respectively, and a third gate electrode between the first and second gate electrodes, wherein the third gate electrode is floated or grounded.

Abstract: A power device includes a drift layer of a second conductivity type located on a semiconductor layer of a first conductivity type, a first source region of the second conductivity type and a second source region of the second conductivity type, located on the drift layer to be apart from each other, and a gate electrode on the drift layer between the first and second source regions with a gate insulating layer between the gate electrode and the drift layer, wherein the gate electrode includes a first gate electrode and a second gate electrode adjacent to the first source region and the second source region, respectively, and a third gate electrode between the first and second gate electrodes, wherein the third gate electrode is floated or grounded.

Abstract: Provided is a monocrystalline cathode active material for a lithium secondary battery, the monocrystalline cathode active material being represented by the Formula of LixPyNi1-a-bCOaAbO2.