Patents by Inventor Jun-Hyuck KWON

Jun-Hyuck KWON has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Precursor for vapor deposition having excellent thermal stability and preparing method thereof
    Patent number: 10490409
    Abstract: The present invention relates to a vapor deposition compound which serves to deposit a thin film through vapor deposition. More particularly, the present invention relates to vapor deposition zirconium, titanium, and hafnium precursors which are applicable to atomic layer deposition (ALD) or chemical vapor deposition (CVD) and which have low viscosity, excellent thermal stability, and fast self-saturation, and a method of preparing the same.
    Type: Grant
    Filed: July 25, 2017
    Date of Patent: November 26, 2019
    Assignee: Hansol Chemical Co., Ltd.
    Inventors: Jung-Woo Park, Hong-Ki Kim, Mi-Ra Park, Jun-Hyuck Kwon
  • PRECURSOR FOR VAPOR DEPOSITION HAVING EXCELLENT THERMAL STABILITY AND PREPARING METHOD THEREOF
    Publication number: 20180122645
    Abstract: The present invention relates to a vapor deposition compound which serves to deposit a thin film through vapor deposition. More particularly, the present invention relates to vapor deposition zirconium, titanium, and hafnium precursors which are applicable to atomic layer deposition (ALD) or chemical vapor deposition (CVD) and which have low viscosity, excellent thermal stability, and fast self-saturation, and a method of preparing the same.
    Type: Application
    Filed: July 25, 2017
    Publication date: May 3, 2018
    Inventors: Jung-Woo PARK, Hong-Ki KIM, Mi-Ra PARK, Jun-Hyuck KWON