Abstract: An apparatus for recognizing an object includes a camera that obtains a 2D image, a lidar that obtains a 3D image, and a processor. The processor generates a bird's-eye view (BEV) feature map by extracting features from a two-dimensional plane BEV generated based on 3D information. The processor also generates an image feature map by extracting features of a multi-channel 2D image in which the 3D information is added to the 2D image. The processor also generates a complex feature map by mixing the image feature map and the BEV feature map. The processor also recognizes the object by artificial intelligence learning the complex feature map.

Abstract: A method for fabricating semiconductor device may include forming a source/drain pattern on a fin-type pattern, forming an etch stop film and an interlayer insulating film on the source/drain pattern, forming a contact hole in the interlayer insulating film, forming a sacrificial liner along a sidewall and a bottom surface of the contact hole, performing an ion implantation process while the sacrificial liner is present, removing the sacrificial liner and forming a contact liner along the sidewall of the contact hole, and forming a source/drain contact on the contact liner. The ion implantation process may include implant impurities into the source/drain pattern. The source/drain contact may be connected to the source/drain pattern.

Abstract: Provided is a semiconductor device including an active pattern extended in a first direction, a plurality of gate structures including a gate electrode and a gate spacer disposed to be spaced apart from each other in the first direction on the active pattern and extended in a second direction, a source/drain pattern on the active pattern, a source/drain contact on the source/drain pattern, and a contact liner structure extended along a sidewall of the source/drain contact, being in contact with the sidewall of the source/drain contact. The contact liner structure includes a first contact liner and a second contact liner on the first contact liner. The first contact liner includes a first bottom portion, and a first vertical portion protruded from the first bottom portion and extended in a third direction. A lower surface of the contact liner structure is higher than an upper surface of the source/drain pattern.

Abstract: Semiconductor devices with improved performance and reliability and methods for forming the same are provided. The semiconductor devices include an active pattern extending in a first direction, gate structures spaced apart from each other in the first direction on the active pattern, a source/drain pattern on the active pattern, a source/drain contact on the source/drain pattern, and a contact liner extending along a sidewall of the source/drain contacts. A carbon concentration of the contact liner at a first point of the contact liner is different from a carbon concentration of the contact liner at a second point of the contact liner, and the first point is at a first height from an upper surface of the active pattern, the second point is at a second height from the upper surface of the active pattern, and the first height is smaller than the second height.

Abstract: There is provided a semiconductor device capable of improving the performance and reliability of a device. The semiconductor device may include a first interlayer insulating film containing therein a plurality of pores, a first line structure in the first interlayer insulating film, an inserted insulating film extending along and on a upper surface of the first interlayer insulating film and in contact with the first interlayer insulating film, a barrier insulating film in contact with the inserted insulating film and extending along an upper surface of the inserted insulating film and an upper surface of the first line structure, a second interlayer insulating film on the barrier insulating film and a second line structure disposed in the second interlayer insulating film and connected to the first line structure.

Abstract: There is provided a semiconductor device including an etching stop film which is placed disposed on a substrate; an interlayer insulating film which is disposed on the etching stop film; a trench which penetrates the interlayer insulating film and the etching stop film; a spacer which extends along side walls of the trench; a barrier film which extends along the spacer and a bottom surface of the trench; and a filling film which fills the trench on the barrier film. The trench includes a first trench and a second trench which are spaced apart from each other in a first direction and have different widths from each other in the first direction. A bottom surface of the second trench is placed disposed below a bottom surface of the first trench.

Abstract: A semiconductor device includes an etching stop film disposed on a substrate; an interlayer insulating film on the etching stop film; a first trench and a second trench which are spaced apart in a first direction, and penetrate the etching stop film and the interlayer insulating film, the first trench having a side wall that exposes the interlayer insulating film, and the second trench having a side wall that exposes the interlayer insulating film; a first spacer which covers the interlayer insulating film exposed by the side wall of the first trench and does not cover a portion of the side wall of the first trench; a second spacer which covers the interlayer insulating film exposed by the side wall of the second trench and does not cover a portion of the side wall of the second trench; a first barrier layer which extends along a side wall of the first spacer, the portion of the side wall of the first trench not covered by the first spacer, and a bottom surface of the first trench; a first filling film which

Abstract: The present invention relates to a method for purifying phenol, which comprises: contacting a phenol stream comprising hydroxyacetone, 2-methylbenzofuran, 3-methylbenzofuran and phenol with an acyl chloride in the presence of an organic sulfonic acid to convert one or more selected from the group consisting of hydroxyacetone, 2-methylbenzofuran and 3-methylbenzofuran into a high boiling point compound having a boiling point higher than that of the phenol; and recovering the high boiling point compound from the phenol stream.

Abstract: The present invention relates to a method for purifying phenol, which comprises: contacting a phenol stream comprising hydroxy acetone, 2-methylbenzofuran, 3-methylbenzofuran and phenol with an acyl chloride in the presence of an organic sulfonic acid to convert one or more selected from the group consisting of hydroxyacetone, 2-methylbenzofuran and 3-methylbenzofuran into a high boiling point compound having a boiling point higher than that of the phenol; and recovering the high boiling point compound from the phenol stream.

Abstract: The present invention relates to a body valve assembly for a shock absorber, which is capable of improving ride comfort by improving the degree of freedom of the adjustment in damping force and preventing the damping force from being rapidly changed.

Abstract: The present invention relates to a body valve assembly for a shock absorber, which is capable of improving ride comfort by improving the degree of freedom of the adjustment in damping force and preventing the damping force from being rapidly changed.

Abstract: In a piston valve assembly for a shock absorber, a main piston partitions a cylinder into an upper chamber and a lower chamber. Compression passages and rebound passages penetrate the main piston in a vertical direction. A first compression value forms a first compression chamber, and a top surface of a lower retainer is opened toward the upper chamber. Bypass passages are formed on an outer peripheral surface of the piston rod. A guide assembly surrounds an outer peripheral surface of the compression valve and the bottom surface of the compression valve, tightly contacts the bottom surface of the compression valve in a high-frequency section, and moves down toward the lower retainer in a low-frequency section.

Abstract: A shock absorber is provided. A first piston, a pilot valve, a second piston, and a rebound retainer are sequentially connected to a piston rod reciprocating within a cylinder. An upper portion of the second piston is provided inside the first piston. Due to a first compression chamber formed in the first piston, a second compression chamber formed in the second piston, a third compression chamber formed between the first piston and the second piston, and a fourth compression chamber formed in the rebound retainer, it is possible to improve a ride comfort by reducing a damping force over periods from an ultra-low-speed period to a high-speed period and it is possible to achieve the compact configuration and the cost reduction by reducing the overall length of the processing portion.

Abstract: A shock absorber includes: a main piston which is mounted on a piston rod reciprocating within a cylinder, slidingly reciprocates within the cylinder while contacting an inner periphery of the cylinder, and partitions the cylinder into upper and lower chambers; a communication passage which is formed in the piston rod to communicate the upper chamber with the lower chamber, and penetrates from an upper side of the main piston to a lower side of the piston rod; a housing which is mounted on a lower end of the piston rod to form an internal space, a communication hole connected to the lower chamber being formed in a bottom surface of the housing.

Abstract: In a piston valve assembly for a shock absorber, a main piston partitions a cylinder into an upper chamber and a lower chamber. Compression passages and rebound passages penetrate the main piston in a vertical direction. A first compression value forms a first compression chamber, and a top surface of a lower retainer is opened toward the upper chamber. Bypass passages are formed on an outer peripheral surface of the piston rod. A guide assembly surrounds an outer peripheral surface of the compression valve and the bottom surface of the compression valve, tightly contacts the bottom surface of the compression valve in a high-frequency section, and moves down toward the lower retainer in a low-frequency section.

Abstract: A shock absorber is provided. A first piston, a pilot valve, a second piston, and a rebound retainer are sequentially connected to a piston rod reciprocating within a cylinder. An upper portion of the second piston is provided inside the first piston. Due to a first compression chamber formed in the first piston, a second compression chamber formed in the second piston, a third compression chamber formed between the first piston and the second piston, and a fourth compression chamber formed in the rebound retainer, it is possible to improve a ride comfort by reducing a damping force over periods from an ultra-low-speed period to a high-speed period and it is possible to achieve the compact configuration and the cost reduction by reducing the overall length of the processing portion.