Abstract: A radiation detector includes a plurality of pixels configured to directly convert a radiation into an electric charge, a reading circuit configured to read pixel signals from the plurality of pixels for each frame, and a processing unit configured to process the pixel signals read by the reading circuit, wherein the processing unit is configured to determine a background component contained in a pixel signal of each of the plurality of pixels by using values of the pixel signals read from the plurality of pixels in a frame in which the pixel signal whose background component is to be determined is read.

Abstract: An imaging apparatus includes: a detector configured to detect a surface position of an object by receiving a second electromagnetic wave of which wavelength is shorter than a first electromagnetic wave; a focusing device configured to collect the first electromagnetic wave reflected on the object; at least one memory and at least one processor which function as a control unit configured to control the focusing device such that a position based on the surface position is focused on; and an image sensor configured to image the object using the first electromagnetic wave collected by the focusing device.

Abstract: A radiation detector includes a plurality of pixels configured to directly convert a radiation into an electric charge, a reading circuit configured to read pixel signals from the plurality of pixels for each frame, and a processing unit configured to process the pixel signals read by the reading circuit, wherein the processing unit is configured to determine a background component contained in a pixel signal of each of the plurality of pixels by using values of the pixel signals read from the plurality of pixels in a frame in which the pixel signal whose background component is to be determined is read.

Abstract: A processing system comprising a first imaging system configured to capture a first image based on a terahertz wave from an inspection target, a second imaging system configured to capture a second image of the inspection target based on an electromagnetic wave of a wavelength different from the terahertz wave, and a processor configured to process the first image and the second image, wherein the processor detects an inspection region based on the second image and processes information of a region of the first image corresponding to the inspection region.

Abstract: A semiconductor device in which a first structure that includes a first semiconductor substrate on which a semiconductor element and an antenna configured to oscillate or receive an electromagnetic wave are arranged, a second structure that includes a second semiconductor substrate on which a control circuit configured to control the semiconductor element is arranged, and a third structure that has a first bonding surface bonded to the first structure and a second bonding surface bonded to the second structure are stacked, is provided. A first conductor plug electrically connected to the semiconductor element and reaching the first bonding surface is arranged in the first structure, the third structure includes a base material layer and a conductor layer stacked on each other, and the third structure has a higher thermal conductivity than the first structure and the second structure.

Abstract: A radiation detector includes a plurality of pixels configured to directly convert a radiation into an electric charge, a reading circuit configured to read pixel signals from the plurality of pixels for each frame, and a processing unit configured to process the pixel signals read by the reading circuit, wherein the processing unit is configured to determine a background component contained in a pixel signal of each of the plurality of pixels by using values of the pixel signals read from the plurality of pixels in a frame in which the pixel signal whose background component is to be determined is read.

Abstract: A processing system comprising a first imaging system configured to capture a first image based on a terahertz wave from an inspection target, a second imaging system configured to capture a second image of the inspection target based on an electromagnetic wave of a wavelength different from the terahertz wave, and a processor configured to process the first image and the second image, wherein the processor detects an inspection region based on the second image and processes information of a region of the first image corresponding to the inspection region.

Abstract: A movable body includes an imaging system which acquires an image formed by a terahertz wave, wherein the image is an image obtained by capturing an inspection object inside the movable body.

Abstract: In a line sensor including color filters that are periodically disposed in a light-receiving-element row, a problem called a “mixture of colors” occurs. A “mixture of colors” occurs when light that has been transmitted through a color filter differing from a color filter corresponding to a light receiving element is incident upon the light receiving element. In a CMOS sensor 107 including a light-receiving-element row in which a plurality of photodiodes 1204 are disposed side by side in a main scanning direction and a plurality of color filters 1202 that are disposed in correspondence with the plurality of photodiodes 1204, the center of each color filter 1202 is displaced in a direction of the center of the light-receiving-element row from the center of the photodiode 1204 corresponding to the color filter.

Abstract: An imaging apparatus includes: a detector configured to detect a surface position of an object by receiving a second electromagnetic wave of which wavelength is shorter than a first electromagnetic wave; a focusing device configured to collect the first electromagnetic wave reflected on the object; at least one memory and at least one processor which function as a control unit configured to control the focusing device such that a position based on the surface position is focused on; and an image sensor configured to image the object using the first electromagnetic wave collected by the focusing device.

Abstract: A semiconductor element which oscillates or detects a terahertz wave, the semiconductor element comprising: a first electrode; a semiconductor layer having a gain of the terahertz wave; a second electrode which forms a mesa structure together with the semiconductor layer; a third electrode; a fourth electrode; a first dielectric layer which is in contact with the third electrode and which surrounds the mesa structure; and a second dielectric layer which is arranged between the first electrode and the fourth electrode, which surrounds the third electrode, and which is made of a different material from the first dielectric layer, wherein the first electrode, the semiconductor layer, the second electrode, the third electrode, and the fourth electrode are stacked in this order from a side of the substrate in a direction perpendicular to the substrate, and a predetermined mathematical expression is satisfied.

Abstract: A receiver which is configured to detect a terahertz wave incident on a first surface of a substrate, the receiver comprising: an antenna which is provided on the first surface of the substrate and is configured to receive the terahertz wave; and a through electrode which is electrically connected to the antenna and penetrates the substrate from the first surface to a second surface, the second surface being opposite to the first surface, wherein the through electrode is separated from the antenna by a distance that is 0.25 times a resonance wavelength or more.

Abstract: In a line sensor including color filters that are periodically disposed in a light-receiving-element row, a problem called a “mixture of colors” occurs. A “mixture of colors” occurs when light that has been transmitted through a color filter differing from a color filter corresponding to a light receiving element is incident upon the light receiving element. In a CMOS sensor 107 including a light-receiving-element row in which a plurality of photodiodes 1204 are disposed side by side in a main scanning direction and a plurality of color filters 1202 that are disposed in correspondence with the plurality of photodiodes 1204, the center of each color filter 1202 is displaced in a direction of the center of the light-receiving-element row from the center of the photodiode 1204 corresponding to the color filter.

Abstract: An imaging device includes a first substrate in which a plurality of first pixels each including a first light receiving unit and a light emitting unit that emits light with a light amount in accordance with a light amount detected by the first light receiving unit are provided, and a second substrate that is provided facing the first substrate and in which a plurality of second pixels each including a second light receiving unit that detects a light emitted from the light emitting unit of the first pixel and a readout circuit that outputs an image signal based on information detected by the plurality of second pixels are provided.

Abstract: In a line sensor including color filters that are periodically disposed in a light-receiving-element row, a problem called a “mixture of colors” occurs. A “mixture of colors” occurs when light that has been transmitted through a color filter differing from a color filter corresponding to a light receiving element is incident upon the light receiving element. In a CMOS sensor 107 including a light-receiving-element row in which a plurality of photodiodes 1204 are disposed side by side in a main scanning direction and a plurality of color filters 1202 that are disposed in correspondence with the plurality of photodiodes 1204, the center of each color filter 1202 is displaced in a direction of the center of the light-receiving-element row from the center of the photodiode 1204 corresponding to the color filter.

Abstract: A processing system comprising a first imaging system configured to capture a first image based on a terahertz wave from an inspection target, a second imaging system configured to capture a second image of the inspection target based on an electromagnetic wave of a wavelength different from the terahertz wave, and a processor configured to process the first image and the second image, wherein the processor detects an inspection region based on the second image and processes information of a region of the first image corresponding to the inspection region.

Abstract: A movable body includes an imaging system which acquires an image formed by a terahertz wave, wherein the image is an image obtained by capturing an inspection object inside the movable body.

Abstract: A camera system is provided. The camera system is arranged to form a part of a monitoring system arranged in a place of a facility where an inspection object lines up. The camera system comprises an imaging system configured to acquire an image formed by a terahertz wave reflected by the inspection object.

Abstract: A semiconductor element which oscillates or detects a terahertz wave, the semiconductor element comprising: a first electrode; a semiconductor layer having a gain of the terahertz wave; a second electrode which forms a mesa structure together with the semiconductor layer; a third electrode; a fourth electrode; a first dielectric layer which is in contact with the third electrode and which surrounds the mesa structure; and a second dielectric layer which is arranged between the first electrode and the fourth electrode, which surrounds the third electrode, and which is made of a different material from the first dielectric layer, wherein the first electrode, the semiconductor layer, the second electrode, the third electrode, and the fourth electrode are stacked in this order from a side of the substrate in a direction perpendicular to the substrate, and a predetermined mathematical expression is satisfied.

Abstract: A receiver which is configured to detect a terahertz wave incident on a first surface of a substrate, the receiver comprising: an antenna which is provided on the first surface of the substrate and is configured to receive the terahertz wave; and a through electrode which is electrically connected to the antenna and penetrates the substrate from the first surface to a second surface, the second surface being opposite to the first surface, wherein the through electrode is separated from the antenna by a distance that is 0.25 times a resonance wavelength or more.