Abstract: A radiation detector includes a plurality of pixels configured to directly convert a radiation into an electric charge, a reading circuit configured to read pixel signals from the plurality of pixels for each frame, and a processing unit configured to process the pixel signals read by the reading circuit, wherein the processing unit is configured to determine a background component contained in a pixel signal of each of the plurality of pixels by using values of the pixel signals read from the plurality of pixels in a frame in which the pixel signal whose background component is to be determined is read.

Abstract: A processing system comprising a first imaging system configured to capture a first image based on a terahertz wave from an inspection target, a second imaging system configured to capture a second image of the inspection target based on an electromagnetic wave of a wavelength different from the terahertz wave, and a processor configured to process the first image and the second image, wherein the processor detects an inspection region based on the second image and processes information of a region of the first image corresponding to the inspection region.

Abstract: A movable body includes an imaging system which acquires an image formed by a terahertz wave, wherein the image is an image obtained by capturing an inspection object inside the movable body.

Abstract: In a line sensor including color filters that are periodically disposed in a light-receiving-element row, a problem called a “mixture of colors” occurs. A “mixture of colors” occurs when light that has been transmitted through a color filter differing from a color filter corresponding to a light receiving element is incident upon the light receiving element. In a CMOS sensor 107 including a light-receiving-element row in which a plurality of photodiodes 1204 are disposed side by side in a main scanning direction and a plurality of color filters 1202 that are disposed in correspondence with the plurality of photodiodes 1204, the center of each color filter 1202 is displaced in a direction of the center of the light-receiving-element row from the center of the photodiode 1204 corresponding to the color filter.

Abstract: An imaging apparatus includes: a detector configured to detect a surface position of an object by receiving a second electromagnetic wave of which wavelength is shorter than a first electromagnetic wave; a focusing device configured to collect the first electromagnetic wave reflected on the object; at least one memory and at least one processor which function as a control unit configured to control the focusing device such that a position based on the surface position is focused on; and an image sensor configured to image the object using the first electromagnetic wave collected by the focusing device.

Abstract: A semiconductor element which oscillates or detects a terahertz wave, the semiconductor element comprising: a first electrode; a semiconductor layer having a gain of the terahertz wave; a second electrode which forms a mesa structure together with the semiconductor layer; a third electrode; a fourth electrode; a first dielectric layer which is in contact with the third electrode and which surrounds the mesa structure; and a second dielectric layer which is arranged between the first electrode and the fourth electrode, which surrounds the third electrode, and which is made of a different material from the first dielectric layer, wherein the first electrode, the semiconductor layer, the second electrode, the third electrode, and the fourth electrode are stacked in this order from a side of the substrate in a direction perpendicular to the substrate, and a predetermined mathematical expression is satisfied.

Abstract: A receiver which is configured to detect a terahertz wave incident on a first surface of a substrate, the receiver comprising: an antenna which is provided on the first surface of the substrate and is configured to receive the terahertz wave; and a through electrode which is electrically connected to the antenna and penetrates the substrate from the first surface to a second surface, the second surface being opposite to the first surface, wherein the through electrode is separated from the antenna by a distance that is 0.25 times a resonance wavelength or more.

Abstract: In a line sensor including color filters that are periodically disposed in a light-receiving-element row, a problem called a “mixture of colors” occurs. A “mixture of colors” occurs when light that has been transmitted through a color filter differing from a color filter corresponding to a light receiving element is incident upon the light receiving element. In a CMOS sensor 107 including a light-receiving-element row in which a plurality of photodiodes 1204 are disposed side by side in a main scanning direction and a plurality of color filters 1202 that are disposed in correspondence with the plurality of photodiodes 1204, the center of each color filter 1202 is displaced in a direction of the center of the light-receiving-element row from the center of the photodiode 1204 corresponding to the color filter.

Abstract: An imaging device includes a first substrate in which a plurality of first pixels each including a first light receiving unit and a light emitting unit that emits light with a light amount in accordance with a light amount detected by the first light receiving unit are provided, and a second substrate that is provided facing the first substrate and in which a plurality of second pixels each including a second light receiving unit that detects a light emitted from the light emitting unit of the first pixel and a readout circuit that outputs an image signal based on information detected by the plurality of second pixels are provided.

Abstract: In a line sensor including color filters that are periodically disposed in a light-receiving-element row, a problem called a “mixture of colors” occurs. A “mixture of colors” occurs when light that has been transmitted through a color filter differing from a color filter corresponding to a light receiving element is incident upon the light receiving element. In a CMOS sensor 107 including a light-receiving-element row in which a plurality of photodiodes 1204 are disposed side by side in a main scanning direction and a plurality of color filters 1202 that are disposed in correspondence with the plurality of photodiodes 1204, the center of each color filter 1202 is displaced in a direction of the center of the light-receiving-element row from the center of the photodiode 1204 corresponding to the color filter.

Abstract: A processing system comprising a first imaging system configured to capture a first image based on a terahertz wave from an inspection target, a second imaging system configured to capture a second image of the inspection target based on an electromagnetic wave of a wavelength different from the terahertz wave, and a processor configured to process the first image and the second image, wherein the processor detects an inspection region based on the second image and processes information of a region of the first image corresponding to the inspection region.

Abstract: A movable body includes an imaging system which acquires an image formed by a terahertz wave, wherein the image is an image obtained by capturing an inspection object inside the movable body.

Abstract: A camera system is provided. The camera system is arranged to form a part of a monitoring system arranged in a place of a facility where an inspection object lines up. The camera system comprises an imaging system configured to acquire an image formed by a terahertz wave reflected by the inspection object.

Abstract: A semiconductor element which oscillates or detects a terahertz wave, the semiconductor element comprising: a first electrode; a semiconductor layer having a gain of the terahertz wave; a second electrode which forms a mesa structure together with the semiconductor layer; a third electrode; a fourth electrode; a first dielectric layer which is in contact with the third electrode and which surrounds the mesa structure; and a second dielectric layer which is arranged between the first electrode and the fourth electrode, which surrounds the third electrode, and which is made of a different material from the first dielectric layer, wherein the first electrode, the semiconductor layer, the second electrode, the third electrode, and the fourth electrode are stacked in this order from a side of the substrate in a direction perpendicular to the substrate, and a predetermined mathematical expression is satisfied.

Abstract: A receiver which is configured to detect a terahertz wave incident on a first surface of a substrate, the receiver comprising: an antenna which is provided on the first surface of the substrate and is configured to receive the terahertz wave; and a through electrode which is electrically connected to the antenna and penetrates the substrate from the first surface to a second surface, the second surface being opposite to the first surface, wherein the through electrode is separated from the antenna by a distance that is 0.25 times a resonance wavelength or more.

Abstract: An imaging device includes a first substrate in which a plurality of first pixels each including a first light receiving unit and a light emitting unit that emits light with a light amount in accordance with a light amount detected by the first light receiving unit are provided, and a second substrate that is provided facing the first substrate and in which a plurality of second pixels each including a second light receiving unit that detects a light emitted from the light emitting unit of the first pixel and a readout circuit that outputs an image signal based on information detected by the plurality of second pixels are provided.

Abstract: In a line sensor including color filters that are periodically disposed in a light-receiving-element row, a problem called a “mixture of colors” occurs. A “mixture of colors” occurs when light that has been transmitted through a color filter differing from a color filter corresponding to a light receiving element is incident upon the light receiving element. In a CMOS sensor 107 including a light-receiving-element row in which a plurality of photodiodes 1204 are disposed side by side in a main scanning direction and a plurality of color filters 1202 that are disposed in correspondence with the plurality of photodiodes 1204, the center of each color filter 1202 is displaced in a direction of the center of the light-receiving-element row from the center of the photodiode 1204 corresponding to the color filter.

Abstract: A photoelectric conversion apparatus includes a semiconductor substrate including recessed portions and insulators disposed on the respective recessed portions. The semiconductor substrate includes a first-conductivity-type first semiconductor region, a second-conductivity-type second semiconductor region that is of a conductivity type different from the first-conductivity-type and that is formed in the first semiconductor region, a second-conductivity-type third semiconductor region in contact with the second semiconductor region on a surface of the semiconductor substrate, and a first-conductivity-type fourth semiconductor region that includes the recessed portions. The second semiconductor region and the third semiconductor region are surrounded by the fourth semiconductor region on the surface of the semiconductor substrate. The insulators on the recessed portions extend through the fourth semiconductor region and are in contact with the first semiconductor region.

Abstract: An aspect of the disclosure relates to a semiconductor device including a semiconductor element, a connection terminal configured to output a signal based on an output of the semiconductor element, a protection circuit connected to the connection terminal, and a voltage limiting element connected to the connection terminal, wherein the protection circuit is connected to a first power supply line having a first potential and a second power supply line having a second potential lower than the first potential, and wherein a potential supplied to the voltage limiting element is higher than the second potential and lower than the first potential.

Abstract: In a line sensor including color filters periodically disposed in a light-receiving-element row, a “mixture of colors” problem occurs when light that has been transmitted through a color filter differing from a color filter corresponding to a light receiving element is incident upon the light receiving element. To prevent the “mixture of colors” from occurring, in a CMOS sensor 107 including a light-receiving-element row in which a plurality of photodiodes 1204 are disposed side by side in a main scanning direction and a plurality of color filters 1202 that are disposed in correspondence with the plurality of photodiodes 1204, the center of each color filter 1202, other than the center color filter that corresponds to the center photodiode of the light-receiving-element row, is displaced in a direction toward the center of the light-receiving-element row from the center of the photodiode 1204 corresponding to the color filter.