Abstract: A mobile terminal including an antenna device including an antenna element and a first non-feeding element, a radio-frequency unit that receives a signal from the antenna element, first and second matching circuits connected to the antenna element, a first switch that selectively connects one of the first and second matching circuits to the radio-frequency unit, a second switch that selectively grounds the first non-feeding element, an attitude-detection unit that detects an attitude of the mobile terminal, and a control unit that controls the first and second switches based on an output of the attitude-detection unit.

Abstract: A mobile terminal including an antenna device including an antenna element and a first non-feeding element, a radio-frequency unit that receives a signal from the antenna element, first and second matching circuits connected to the antenna element, a first switch that selectively connects one of the first and second matching circuits to the radio-frequency unit, a second switch that selectively grounds the first non-feeding element, an attitude-detection unit that detects an attitude of the mobile terminal, and a control unit that controls the first and second switches based on an output of the attitude-detection unit.

Abstract: A variable capacity wobble plate type compressor having a non-rotatory wobble plate supported on a magnetic material support member to non-rotatively wobble to move compressing pistons in cylinder bores, a steel drive shaft driven by a drive source via a solenoid-operated clutch and causing the non-rotative wobble of the wobble plate at a given angle of inclination that is changed to vary the capacity of the compressor, and a capacity detecting unit provided with a permanent magnet attached to an outer periphery of the wobble plate, a magnetic sensor fixedly attached to the crankcase of the outer casing, for sensing an approach and departure of the permanent magnet of the wobble plate.

Abstract: A control circuit unit for controlling the energization of a solenoid of a solenoid-operated capacity control unit incorporated in a a variable capacity compressor, typically, a variable capacity wobble plate type refrigerant compressor for a car air-conditioner, having a switching unit for establishing an electric conduction of the energizing circuit of the solenoid when the solenoid-operated valve is actuated for changing the compressor capacity, and an electric energizing voltage control circuit used to apply a high electric starting voltage to the solenoid emergizing circuit at a predetermined initial starting time of the solenoid, and a low electric retaining voltage required for retention of the energization of the solenoid valve after the predetermined starting time has elapsed.

Abstract: A heating and melting apparatus according to the present invention has a housing for receiving a substance to be melted, a heater for heating the housing in order to melt the substance, and a vessel for receiving and storing the resulting liquid. The liquid stored in the vessel is exhausted from the vessel in an effectively utilizable form. The operation of the apparatus is controlled by a processing unit in accordance with the temperatures of the housing and the liquid stored in the vessel.

Abstract: Provided is a toner for use in electrophotography comprising (A) an epoxy resin or a modified epoxy resin obtained by the reaction of an epoxy resin with a polyfunctional compound having at least two carboxyl or amino groups per molecule, and (B) a bivalent or polyvalent metal complex compound or a bivalent or polyvalent metal salt.

Abstract: A method for manufacturing a semiconductor device, comprising the steps of forming a monocrystalline silicon layer on a sapphire substrate, ion-implanting silicon and oxygen in a portion of the silicon layer which is in the vicinity of an interface between the substrate and the silicon layer, performing annealing to improve a crystal structure of the portion of the silicon layer in the vicinity of the interface and forming an insulation layer, selectively forming an element isolation region in the silicon layer to obtain an island silicon layer, forming a gate insulation film on the island silicon layer, forming a gate electrode on the gate insulation film, ion-implanting an impurity in the island silicon layer by using the gate electrode as a mask, and annealing a resultant structure to form source and drain regions in the island silicon layer such that bottoms thereof reach a surface of the insulation layer.

Abstract: A first wiring to be connected as needed and second wirings to be disconnected as needed are formed three-dimensionally with an insulation film interposed therebetween. The first wiring comprises at least three first semiconductor regions of a second conductivity type formed at predetermined intervals in the surface of a semiconductor substrate of a first conductivity type, and second semiconductor regions of the first conductivity type formed between each pair of adjacent first semiconductor regions. The second wirings are formed on the first wiring through the insulation film and in a number equal to that of the second semiconductor regions. Each second wiring and the corresponding second semiconductor region are located within a spot of a radiating means radiated vertically onto the semiconductor substrate for switching the wirings.

Abstract: Gate electrodes for respective n channel and p channel transistors are disposed on a semiconductive layer over an oxide layer. A portion of the semiconductive layer existing between the gate electrodes is removed so that the thickness of the semiconductive layer between the gate electrodes is less than that of the semiconductive layer under the gate electrode.

Abstract: A semiconductor device comprising an insulating substrate such as sapphire and a semiconductor element region formed on the substrate, wherein an insulating layer containing yttrium or a lanthanide element is interposed between the substrate and semiconductor element region. A method of manufacturing a semiconductor device such as MOS/SOS wherein yttrium or a lanthanide element is ion implanted into an interface between the substrate and the semiconductor film formed on the substrate to form an insulating layer containing yttrium or a lanthanide element at the interface.