Abstract: It is an objective to provide a semiconductor device with low leak current. The semiconductor device includes a plurality of ground side electrodes and a plurality of signal side electrodes arranged on a semiconductor substrate in an alternating manner; a plurality of control electrodes arranged respectively between each pair of a ground side electrode and a signal side electrode; a ground side electrode connecting section that connects the ground side electrodes to each other; a signal side electrode connecting section that connects the signal side electrodes to each other; and ground side lead wiring and signal side lead wiring that extend respectively from a region near one end and a region near another end of an arranged electrode section, in which the ground side electrodes and the signal side electrodes are arranged in an arrangement direction, away from the arranged electrode group in the arrangement direction.

Abstract: It is an objective to provide a semiconductor device with low leak current. The semiconductor device includes a plurality of ground side electrodes and a plurality of signal side electrodes arranged on a semiconductor substrate in an alternating manner; a plurality of control electrodes arranged respectively between each pair of a ground side electrode and a signal side electrode; a ground side electrode connecting section that connects the ground side electrodes to each other; a signal side electrode connecting section that connects the signal side electrodes to each other; and ground side lead wiring and signal side lead wiring that extend respectively from a region near one end and a region near another end of an arranged electrode section, in which the ground side electrodes and the signal side electrodes are arranged in an arrangement direction, away from the arranged electrode group in the arrangement direction.

Abstract: There is provided a manufacturing method of a semiconductor apparatus, including forming an InGaP layer on a substrate, forming a gate electrode having a Ti layer and an Au layer by vapor deposition on an upper surface of the InGaP layer, further forming a GaAs layer on the upper surface of the InGaP layer in a region different from a region in which the gate electrode is formed, and further forming a source electrode and a drain electrode on an upper surface of the GaAs layer. When the gate electrode having the Ti and Au layers is formed on the upper surface of the InGaP layer, the Ti and Au layers are formed with a substrate temperature being set equal to or lower than 180° C.

Abstract: A display has a panel, and first and second electrodes. The first and second electrodes define a matrix of cells on the panel. The second electrodes, which correspond to lines of the cells, are scanned to select the cell lines one by one. The first electrodes are driven to set display data for a selected one of the cell lines. The display also has a sequence setting unit for setting sequences of scanning the second electrodes, and a sequence selection unit for selecting one of the sequences that minimizes the current and power consumption of a first-electrode driver without deteriorating the quality of the displayed images.

Abstract: A display has a panel, and first and second electrodes. The first and second electrodes define a matrix of cells on the panel. The second electrodes, which correspond to lines of the cells, are scanned to select the cell lines one by one. The first electrodes are driven to set display data for a selected one of the cell lines. The display also has a sequence setting unit for setting sequences of scanning the second electrodes, and a sequence selection unit for selecting one of the sequences that minimizes the current and power consumption of a first-electrode driver without deteriorating the quality of the displayed images.

Abstract: The present invention relates to a plasma display device which limits a generation of electromagnetic wave. The plasma display device has first and second drive circuits for applying a drive voltage to first and second display electrode pair. Further, a direction of a charge current flowing at said first display electrode pair when said drive voltage is applied by said first drive circuit is opposite on said plasma display panel to a direction of a charge current flowing at said second display electrode pair when said drive voltage is applied by said second drive circuit. According to the present invention, a transitional charge/discharge current, which is generated upon the application of a drive voltage to one of the display electrodes, and a light emission discharge current flow in opposite directions on the panel. Thus, electromagnetic waves that are generated by the inductances of the display electrode pair cancel each other out.