Abstract: Etch block layers having an etching rate smaller than that of a first semiconductor forming a semiconductor substrate are formed on the sidewalls of device isolation grooves by applying oblique ion implantation of Ox, N, or C to the semiconductor substrate including the first semiconductor. Embedded layers including a second semiconductor are selectively formed in recesses by epitaxial-growing the second semiconductor having a lattice constant larger than that of the first semiconductor in the recesses.

Abstract: A method of manufacturing a semiconductor device comprises preparing a working film to be processed, forming an adhesion improving region on the working film for increasing an adhesion between the working film and a mask material containing carbon, forming the mask material on the working film, forming a resist pattern on the mask material, the mask material having a higher etching resistance for the working film than the resist pattern, transferring the pattern of the resist pattern onto the mask material, and etching the working film by using the mask material as a mask.

Abstract: According to the present invention, there is provided a semiconductor devise comprising: a gate electrode formed via a gate insulating film selectively formed on a predetermined region of a semiconductor substrate; a source region and drain region formed in a surface portion of said semiconductor substrate on two sides of a channel region positioned below said gate electrode; a capacitor insulating film formed in the surface portion of said semiconductor substrate to cover an inner surface near a bottom portion of a trench formed adjacent to one of said source region and drain region; a capacitor electrode formed to be buried in said trench covered with said capacitor insulating film; an insulating film formed to cover an inner surface of said trench, which is not covered with said capacitor insulating film; a conductive layer containing a predetermined impurity and formed in said trench so as to be buried in a portion covered with said insulating film on said capacitor electrode; a surface connecting layer f

Abstract: A method of manufacturing a semiconductor device comprises preparing a working film to be processed, forming an adhesion improving region on the working film for increasing an adhesion between the working film and a mask material containing carbon, forming the mask material on the working film, forming a resist pattern on the mask material, the mask material having a higher etching resistance for the working film than the resist pattern, transferring the pattern of the resist pattern onto the mask material, and etching the working film by using the mask material as a mask.