Abstract: The present disclosure relates to a substrate transfer device for sensing deflection of an end-effector and a substrate processing apparatus having the same. The substrate transfer device includes: an end-effector extending in a first direction and supporting a substrate; an end-effector hand connected with one side in the first direction of the end-effector; a horizontal movement unit connected with the end-effector hand and moving the end-effector in the first direction; and a deflection sensing unit including a light emitting part and a light receiving part, which are respectively disposed at both sides of a movement path of the end-effector, and sensing deflection of the end-effector.

Abstract: The present disclosure relates to a substrate processing apparatus and a substrate processing method using the same, and more particularly, to a substrate processing apparatus that is capable of improving a flow of a process gas that is participated in a substrate processing process and a substrate processing method using the same.

Abstract: Provided is a substrate processing apparatus including a tube having an inner space therein, a substrate supporting unit including a plurality of isolation plates configured to vertically stack a plurality of substrates thereon and divide a processing space, in which the plurality of substrates are processed, into a plurality of processing spaces in the tube, a gas supply unit configured to supply a processing gas to the plurality of substrates, and an exhaust unit disposed to face the gas supply unit to exhaust a gas inside the tube. A plurality of through-holes are defined in each of the isolation plates.

Abstract: Provided is a method for multi-supplying gas, the method comprising: installing a control valve and an flow meter on each of a plurality of branch lines branched from a main supply line, in which one or more gases are supplied, and supplying the gas; and providing the gas by adjusting flow of the gas by a controller connected to each of the control valve and the flow meter, wherein the controller has a first control manner, which controls each of the control valves based on a rate of flow measured by the flow meter to required portion flow for each branch line, and the first control manner adjusts an open rate of the control valve if the rate of the measured flow to the required portion flow is not within a predetermined range, and a unit of adjusting the control valve increases or decreases according to a difference between the measured flow and the required portion flow.

Abstract: Provided is a substrate processing apparatus.

Abstract: The present invention may include: a tube providing an interior space in which substrates are processed; a substrate support portion stacking a plurality of substrates in the interior space of the tube in multi-level; a gas supply portion supplying a process gas to the plurality of substrates; an exhaust portion disposed to face the gas supply portion to absorb the process gas; and a flowage adjustment portion having spray openings formed along a circumference of the tube between the gas supply portion and the exhaust portion to spray an adjusting gas, and may be capable of controlling the amount of process gas supplied to an upper surface of the substrate by adjusting the flowage of process gas.

Abstract: Provided is an equipment for manufacturing a semiconductor. The equipment for manufacturing a semiconductor includes a cleaning chamber in which a cleaning process is performed on substrates, an epitaxial chamber in which an epitaxial process for forming an epitaxial layer on each of the substrates is performed, and a transfer chamber to which the cleaning chamber and the epitaxial chamber are connected to sides surfaces thereof, the transfer chamber including a substrate handler for transferring the substrates, on which the cleaning process is completed, into the epitaxial chamber. The cleaning chamber is performed in a batch type with respect to the plurality of substrates.

Abstract: Provided is a method for multi-supplying gas, the method comprising: installing a control valve and an flow meter on each of a plurality of branch lines branched from a main supply line, in which one or more gases are supplied, and supplying the gas; and providing the gas by adjusting flow of the gas by a controller connected to each of the control valve and the flow meter, wherein the controller has a first control manner, which controls each of the control valves based on a rate of flow measured by the flow meter to required portion flow for each branch line, and the first control manner adjusts an open rate of the control valve if the rate of the measured flow to the required portion flow is not within a predetermined range, and a unit of adjusting the control valve increases or decreases according to a difference between the measured flow and the required portion flow.

Abstract: The present disclosure relates to a substrate processing apparatus and a substrate processing method using the same, and more particularly, to a substrate processing apparatus that is capable of improving a flow of a process gas that is participated in a substrate processing process and a substrate processing method using the same.

Abstract: Provided is a substrate processing apparatus including a tube having an inner space therein, a substrate supporting unit including a plurality of isolation plates configured to vertically stack a plurality of substrates thereon and divide a processing space, in which the plurality of substrates are processed, into a plurality of processing spaces in the tube, a gas supply unit configured to supply a processing gas to the plurality of substrates, and an exhaust unit disposed to face the gas supply unit to exhaust a gas inside the tube. A plurality of through-holes are defined in each of the isolation plates.

Abstract: The present invention may include: a tube providing an interior space in which substrates are processed; a substrate support portion stacking a plurality of substrates in the interior space of the tube in multi-level; a gas supply portion supplying a process gas to the plurality of substrates; an exhaust portion disposed to face the gas supply portion to absorb the process gas; and a flowage adjustment portion having spray openings formed along a circumference of the tube between the gas supply portion and the exhaust portion to spray an adjusting gas, and may be capable of controlling the amount of process gas supplied to an upper surface of the substrate by adjusting the flowage of process gas.

Abstract: Provided is a substrate processing apparatus.

Abstract: A substrate processing apparatus may include: a loadlock chamber in which a substrate transferred from the outside is disposed, and an internal state thereof is changed to a vacuum state and an atmospheric pressure state; a substrate processing module in which a process is performed on the substrate; a transfer chamber in which the substrate is transferred, the transfer chamber being disposed between the loadlock chamber and the substrate processing module; and a substrate transfer robot installed within the transfer chamber and transferring the substrate.

Abstract: Provided is a substrate processing apparatus.

Abstract: There are provided a substrate processing module, and substrate processing apparatus including the same, and a substrate transferring method. The substrate processing module includes: a chamber having a passage formed on one side thereof and allowing a substrate to enter or exit therethrough; a first susceptor installed within the chamber, having at least one through hole formed in an upper surface thereof, and allowing the substrate to be placed thereon; a second susceptor installed within the chamber and allowing the substrate to be placed thereon; a rotary member provided within the chamber and rotating, based on a preset position; a holder connected to the rotary member and having a mounting surface allowing the substrate to be placed thereon; and a holder driving module driving the rotary member to move the holder to a standby position corresponding to the first susceptor or to a delivery position corresponding to the second susceptor.

Abstract: Provided is an equipment for manufacturing a semiconductor. The equipment for manufacturing a semiconductor includes a cleaning chamber in which a cleaning process is performed on substrates, an epitaxial chamber in which an epitaxial process for forming an epitaxial layer on each of the substrates is performed, a buffer chamber having a storage space for storing the substrates, and a transfer chamber to which the cleaning chamber, the buffer chamber, and the epitaxial chamber are connected to side surfaces thereof, the transfer chamber comprising a substrate handler for transferring the substrates between the cleaning chamber, the buffer chamber, and the epitaxial chamber. The substrate handler successively transfers the substrates, on which the cleaning process is completed, into the buffer chamber, transfers the substrates stacked within the buffer chamber the epitaxial chamber, and successively transfers the substrates, on which the epitaxial layers are respectively formed, into the buffer chamber.

Abstract: Provided is an equipment for manufacturing a semiconductor. The equipment for manufacturing a semiconductor includes a cleaning chamber in which a cleaning process is performed on substrates, an epitaxial chamber in which an epitaxial process for forming an epitaxial layer on each of the substrates is performed, and a transfer chamber to which the cleaning chamber and the epitaxial chamber are connected to sides surfaces thereof, the transfer chamber including a substrate handler for transferring the substrates, on which the cleaning process is completed, into the epitaxial chamber.

Abstract: Provided is an equipment for manufacturing a semiconductor. The equipment for manufacturing a semiconductor includes a cleaning chamber in which a cleaning process is performed on substrates, an epitaxial chamber in which an epitaxial process for forming an epitaxial layer on each of the substrates is performed, and a transfer chamber to which the cleaning chamber and the epitaxial chamber are connected to sides surfaces thereof, the transfer chamber including a substrate handler for transferring the substrates, on which the cleaning process is completed, into the epitaxial chamber. The cleaning chamber is performed in a batch type with respect to the plurality of substrates.

Abstract: Provided is an equipment for manufacturing a semiconductor. The equipment for manufacturing a semiconductor includes a cleaning chamber in which a cleaning process is performed on substrates, an epitaxial chamber in which an epitaxial process for forming an epitaxial layer on each of the substrates is performed, and a transfer chamber to which the cleaning chamber and the epitaxial chamber are connected to sides surfaces thereof, the transfer chamber including a substrate handler for transferring the substrates, on which the cleaning process is completed, into the epitaxial chamber. The cleaning chamber includes a reaction chamber connected to a side surface of the transfer chamber to perform a reaction process on the substrates and a heating chamber connected to a side surface of the transfer chamber to perform a heating process on the substrates. The reaction chamber and the heating chamber are vertically stacked on each other.

Abstract: According to one embodiment of the present invention, a substrate-processing apparatus includes: first and second chambers parallel to each other; a plurality of first lift pins disposed in the first chamber, and supporting a first substrate transferred to the first chamber; a plurality of second lift pins disposed in the second chamber, and supporting a second substrate transferred into the second chamber; and a transfer robot transferring the first and second substrates into the first and second chambers. The transfer robot includes first and second blades that simultaneously elevate to transfer the first and second substrates to the upper sides of the first and second lift pins, respectively.