Abstract: A schedule creation method is a method for creating a time schedule by executing a learning step multiple times. The learning step includes sequentially placing patterns each indicating a procedure in a processing sequence in a timetable for defining a time schedule for respective elements of a substrate processing apparatus. The sequentially placing patterns in a timetable includes: acquiring one or more placeable patterns that are allowed to be placed in the timetable from among the patterns based on a prescribed constraint condition; predicting and selecting through machine learning a pattern that makes an evaluation value maximum from among the one or more placeable patterns; and updating the timetable by placing the selected pattern in the timetable.

Abstract: A silicon carbide semiconductor device includes a silicon carbide semiconductor substrate having a front surface and a rear surface, and an ohmic electrode in ohmic contact with silicon carbide of at least one of the front surface or the rear surface of the silicon carbide semiconductor substrate. The ohmic electrode is made of Ni containing 0.1 wt % or more and 15 wt % or less of P as an impurity. The ohmic electrode contains Ni silicide including NiSi. The ohmic electrode further contains Ni5P2 in the Ni silicide. A method for manufacturing the silicon carbide semiconductor device includes forming a metal thin film on the silicon carbide that is to be in ohmic contact with the ohmic electrode, and forming the ohmic electrode by laser annealing that includes irradiating the metal thin film with laser light and reacting the Ni with Si in the silicon carbide to generate Ni silicide.

Abstract: A semiconductor device includes a semiconductor chip having an electrode portion and a joining member electrically connected to the electrode portion to allow an electric current to flow in the semiconductor chip through the joining member. The joining member contains a protective material that has a positive temperature coefficient of resistivity, and the positive temperature coefficient of resistivity has a larger value in a temperature range higher than a threshold temperature than in a temperature range lower than the threshold temperature, the threshold temperature being a predetermined temperature lower than a breakdown temperature of the semiconductor chip. The electrode portion of the semiconductor chip may contain the protective material.

Abstract: A semiconductor device includes: a mounting member having an electrode; a conductive member facing the electrode; and a bonding member electrically and mechanically connecting the electrode and the conductive member. The bonding member is made of a sintered body in which an additive particle including a metal atom having aggregation energy higher than a silver atom is added to an silver particle.

Abstract: A distance measurement device controls an emission direction of a laser beam in a light projection device and a reception direction of a laser beam in a light reception device, obtains a reception intensity of the laser beam received by the light reception device, determines whether or not the laser beam received by the light reception device is a laser beam reflected by a target of distance measurement on the basis of a reception direction of the laser beam, a period of time between when the light projection device emits the laser beam and when the light reception device receives the laser beam, a reception intensity of the laser beam, and determination information, and calculates a distance to the target in a case when the laser beam received by the light reception device is the laser beam reflected by the target.

Abstract: A distance measuring device executes a collection process that includes driving a MEMS mirror in each of a plurality of sensors and collecting a drive voltage of the MEMS mirror satisfying a given condition, executes a drive frequency determination process that includes determining a drive frequency of the MEMS mirror when measuring distances by the plurality of sensors based on the drive voltage of the MEMS mirror, and executes a control signal generation process that includes generating and transmitting a control signal to the plurality of sensors, the control signal including configuration information specifying the drive frequency as a drive frequency of the MEMS mirror in each of the plurality of sensors, the configuration information including the drive frequency determined by the drive frequency determination process.

Abstract: A silicon carbide semiconductor device includes a silicon carbide semiconductor substrate having a front surface and a rear surface, and an ohmic electrode in ohmic contact with silicon carbide of at least one of the front surface or the rear surface of the silicon carbide semiconductor substrate. The ohmic electrode is made of Ni containing 0.1 wt % or more and 15 wt % or less of P as an impurity. The ohmic electrode contains Ni silicide including NiSi. The ohmic electrode further contains Ni5P2 in the Ni silicide. A method for manufacturing the silicon carbide semiconductor device includes forming a metal thin film on the silicon carbide that is to be in ohmic contact with the ohmic electrode, and forming the ohmic electrode by laser annealing that includes irradiating the metal thin film with laser light and reacting the Ni with Si in the silicon carbide to generate Ni silicide.

Abstract: A silicon carbide semiconductor device includes: a semiconductor substrate that has a front surface and a rear surface, and is made of silicon carbide; and an ohmic electrode that is ohmically connected to the front surface or the rear surface of the semiconductor substrate. The ohmic electrode includes a metal silicide part and a metal carbide part. The metal silicide part surrounds a periphery of the metal carbide part that has a block shape. The metal silicide part is disposed between the semiconductor substrate and the metal carbide part.

Abstract: A semiconductor device includes: a mounting member having an electrode; a conductive member facing the electrode; and a bonding member electrically and mechanically connecting the electrode and the conductive member. The bonding member is made of a sintered body in which an additive particle including a metal atom having aggregation energy higher than a silver atom is added to an silver particle.

Abstract: A semiconductor device includes a semiconductor chip having an electrode portion and a joining member electrically connected to the electrode portion to allow an electric current to flow in the semiconductor chip through the joining member. The joining member contains a protective material that has a positive temperature coefficient of resistivity, and the positive temperature coefficient of resistivity has a larger value in a temperature range higher than a threshold temperature than in a temperature range lower than the threshold temperature, the threshold temperature being a predetermined temperature lower than a breakdown temperature of the semiconductor chip. The electrode portion of the semiconductor chip may contain the protective material.

Abstract: In a case where a back surface of an SiC semiconductor wafer, which is provided by a C surface, is covered with a back surface electrode and a scribe line cannot be confirmed, a reference line is formed before dicing. As a result, even when a processing upper surface from which dicing is carried out is a C surface, the dicing can be performed by estimating a scribe line with reference to the reference line. Accordingly, even if the semiconductor wafer is cut at a higher speed than that in the conventional art, a high-quality SiC semiconductor device with less chipping can be manufactured. A blade abrasion can be reduced, and costs can be also reduced.

Abstract: A silicon carbide semiconductor device includes: a semiconductor substrate that has a front surface and a rear surface, and is made of silicon carbide; and an ohmic electrode that is ohmically connected to the front surface or the rear surface of the semiconductor substrate. The ohmic electrode includes a metal silicide part and a metal carbide part. The metal silicide part surrounds a periphery of the metal carbide part that has a block shape. The metal silicide part is disposed between the semiconductor substrate and the metal carbide part.

Abstract: A distance measuring device executes a collection process that includes driving a MEMS mirror in each of a plurality of sensors and collecting a drive voltage of the MEMS mirror satisfying a given condition, executes a drive frequency determination process that includes determining a drive frequency of the MEMS mirror when measuring distances by the plurality of sensors based on the drive voltage of the MEMS mirror, and executes a control signal generation process that includes generating and transmitting a control signal to the plurality of sensors, the control signal including configuration information specifying the drive frequency as a drive frequency of the MEMS mirror in each of the plurality of sensors, the configuration information including the drive frequency determined by the drive frequency determination process.

Abstract: A distance measurement device controls an emission direction of a laser beam in a light projection device and a reception direction of a laser beam in a light reception device, obtains a reception intensity of the laser beam received by the light reception device, determines whether or not the laser beam received by the light reception device is a laser beam reflected by a target of distance measurement on the basis of a reception direction of the laser beam, a period of time between when the light projection device emits the laser beam and when the light reception device receives the laser beam, a reception intensity of the laser beam, and determination information, and calculates a distance to the target in a case when the laser beam received by the light reception device is the laser beam reflected by the target.

Abstract: An image forming apparatus includes an output gear that is driven by a drive source, a transmitting member that meshes with the output gear in such a manner as to be capable of advancing toward and retracting from a driving object and transmits a rotational driving force to the driving object, a guiding portion provided coaxially with the output gear and that guides the transmitting member in a direction of advancement or retraction of the transmitting member, and a locking member provided between the output gear and the transmitting member and that limits a movement of the transmitting member from a side of the output gear toward the driving object.

Abstract: An input system includes a display device configured to display a stereoscopic image including a display surface having a plurality of buttons in a three-dimensional space, a detector configured to detect an object inputting on the stereoscopic image, and an information processing device configured to notify a user of an amount in a depth direction of the display surface, from when an input state by the object is a provisional selection state to when the input state by the object is a determination state. The amount is an additional numerical value indicating how much the object has to move in the depth direction to set the input state to be the determination state, the provisional selection state is set when the object is in contact with a button among the plurality of buttons, and the determination state is set when the object is moved by the amount.

Abstract: A driving-force transmitting device includes a first driving joint portion that receives a driving force from a drive source and transmits the driving force to a first rotatable body to rotate the first rotatable body; and a second driving joint portion that receives a driving force from a drive source and transmits the driving force to a second rotatable body to rotate the second rotatable body. The first driving joint portion includes a pair of involute spline joints including an external gear and an internal gear. The second driving joint portion includes a universal joint that changes a position at which the driving force is transmitted in accordance with a position of an axis of the second rotatable body.

Abstract: An image forming apparatus includes an output gear that is driven by a drive source, a transmitting member that meshes with the output gear in such a manner as to be capable of advancing toward and retracting from a driving object and transmits a rotational driving force to the driving object, a guiding portion provided coaxially with the output gear and that guides the transmitting member in a direction of advancement or retraction of the transmitting member, and a locking member provided between the output gear and the transmitting member and that limits a movement of the transmitting member from a side of the output gear toward the driving object.