Patents by Inventor Jun KAWANOBE

Jun KAWANOBE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of manufacturing semiconductor device
    Patent number: 9230824
    Abstract: Provided is a method of manufacturing a semiconductor device. The method includes providing an object to be processed including a multilayer film formed by alternately laminating a first film and a second film having different dielectric coefficients within a processing container of a plasma processing apparatus; and repeatedly performing a sequence including: supplying a first gas including O2 gas or N2 gas, and a rare gas into the processing container and exciting the first gas, supplying a second gas including a fluorocarbon gas or a fluorohydrocarbon gas into the processing container and exciting the second gas, and supplying a third gas including HBr gas, a fluorine-containing gas, and a fluorocarbon gas or a fluorohydrocarbon gas into the processing container and exciting the third gas, so that the multilayer film is etched through a mask.
    Type: Grant
    Filed: December 18, 2014
    Date of Patent: January 5, 2016
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Wataru Takayama, Shoichiro Matsuyama, Susumu Nogami, Daisuke Tamura, Kyosuke Hayashi, Jun Kawanobe
  • METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
    Publication number: 20150179466
    Abstract: Provided is a method of manufacturing a semiconductor device. The method includes providing an object to be processed including a multilayer film formed by alternately laminating a first film and a second film having different dielectric coefficients within a processing container of a plasma processing apparatus; and repeatedly performing a sequence including: supplying a first gas including O2 gas or N2 gas, and a rare gas into the processing container and exciting the first gas, supplying a second gas including a fluorocarbon gas or a fluorohydrocarbon gas into the processing container and exciting the second gas, and supplying a third gas including HBr gas, a fluorine-containing gas, and a fluorocarbon gas or a fluorohydrocarbon gas into the processing container and exciting the third gas, so that the multilayer film is etched through a mask.
    Type: Application
    Filed: December 18, 2014
    Publication date: June 25, 2015
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Wataru TAKAYAMA, Shoichiro MATSUYAMA, Susumu NOGAMI, Daisuke TAMURA, Kyosuke HAYASHI, Jun KAWANOBE