Abstract: The present disclosure relates to an electrolyte solution for a lithium secondary battery capable of improving the output and lifespan characteristics at high temperature of a lithium secondary battery, and a lithium secondary battery including the same. An electrolyte solution for a lithium secondary battery includes a lithium salt, a solvent, and a functional additive, wherein the functional additive includes a negative-electrode film additive, which is silver p-toluenesulfonate.

Abstract: A display driving circuit is provided. The display driving circuit includes a timing controller configured to output image data and a source control signal, a first source driver circuit configured to output first source data of the image data by activating a plurality of first data lines in accordance with the source control signal, the first data lines having a first output spreading time, a second source driver circuit configured to output second source data of the image data by activating a plurality of second data lines in accordance with the source control signal, the second data lines having a second output spreading time, and a third source driver circuit configured to output third source data of the image data by activating a plurality of third data lines in accordance with the source control signal, the third data lines having a third output spreading time, wherein the first output spreading time, the second output spreading time and the third output spreading time do not overlap.

Abstract: A semiconductor device includes a substrate including an upper surface and a lower surface that are opposite to each other in a first direction, an active pattern which is on the upper surface of the substrate and extends in a second direction, a gate electrode which is on the active pattern and extends in a third direction, a first source/drain pattern which is connected to the active pattern on the upper surface of the substrate, and includes a lower epitaxial region and an upper epitaxial region, the upper epitaxial region including an epitaxial recess, and the lower epitaxial region being inside the epitaxial recess, a first source/drain contact, which is connected to the first source/drain pattern and extends into the substrate, and a contact silicide layer, which is between the first source/drain contact and the first source/drain pattern and contacts the lower epitaxial region.

Abstract: An embodiment of a display device includes a substrate, a semiconductor layer, a first gate insulating layer, a gate electrode, a second gate insulating layer, a first storage electrode, a first interlayer insulating layer, a second interlayer insulating layer, a data line, and a driving voltage line. The semiconductor layer is disposed on the substrate. The first gate insulating layer is disposed on the semiconductor layer. The gate electrode is positioned on the first insulating layer. The second gate insulating layer is disposed on the gate electrode. The first storage electrode is positioned on the second gate insulating layer. The first interlayer insulating layer is disposed on the first storage electrode and has an opening surrounding the semiconductor layer, the gate electrode, and the first storage electrode. The second interlayer insulating layer is disposed on the first interlayer insulating layer and fills the opening.

Abstract: A printed circuit board according to an embodiment includes: an insulation layer including a recess portion; and a connection pad disposed on the recess portion of the insulation layer and protruded from the recess portion, wherein the connection pad may include a protrusion and a concave portion that is lower than the protrusion, and a surface height of the protrusion of the connection pad may be substantially the same as or less than a surface height of the insulation layer.

Abstract: A pumping MOS capacitor includes a substrate which is conductive and includes an irregular surface, a dielectric film formed along the irregular surface of the substrate and a gate formed on the dielectric film.

Abstract: A pumping MOS capacitor includes a substrate which is conductive and includes an irregular surface, a dielectric film formed along the irregular surface of the substrate and a gate formed on the dielectric film.