Abstract: A glass stress test method includes breaking a glass, analyzing a shape of a crack of a broken portion of the glass in a plan view, finding a breakage origin of the glass based on the shape of the crack in the plan view, analyzing a cross-section of the breakage origin, and calculating a stress of the glass based on a cross-sectional analysis result of the breakage origin. The stress of the glass is calculated as a value proportional to a floor constant defined by a condition of a floor surface disposed when the glass is broken.

Abstract: A vehicle seat reinforcement device includes a leg portion mounted on a floor panel, a seat cushion frame slidably mounted on the leg portion, and a load reinforcing structure connected between the leg portion and the seat cushion frame, wherein when a seat belt anchorage load is transferred to the seat cushion frame, the seat cushion frame is locked to the leg portion by the load reinforcing structure.

Abstract: A semiconductor device capable of improving a device performance and a reliability is provided. The semiconductor device comprising a gate structure including a gate electrode on a substrate, a source/drain pattern on a side face of the gate electrode, on the substrate and, a source/drain contact connected to the source/drain pattern, on the source/drain pattern, a gate contact connected to the gate electrode, on the gate electrode, and a wiring structure connected to the source/drain contact and the gate contact, on the source/drain contact and the gate contact, wherein the wiring structure includes a first via plug, a second via plug, and a wiring line connected to the first via plug and the second via plug, the first via plug has a single conductive film structure, and the second via plug includes a lower via filling film, and an upper via filling film on the lower via filling film.

Abstract: Disclosed herein are a method for generating Gaussian error data using flash memory and an apparatus using the method. The method includes receiving a request to generate Gaussian error data and delivering an operation command to flash memory; generating Gaussian error noise based on a threshold voltage that is generated when the flash memory performs the operation command; and generating Gaussian error data so as to correspond to the Gaussian error noise and providing the same.

Abstract: Disclosed herein are a Gaussian sampling apparatus and method based on resistive RAM. The Gaussian sampling apparatus based on resistive RAM includes Resistive RAM (RRAM) in which a resistive switching layer is disposed between an upper electrode and a lower electrode, and a sampling controller, wherein the sampling controller is configured to perform an operation corresponding to an erase command of applying a reset voltage to the RRAM when a Gaussian error request is received from an outside of the Gaussian sampling apparatus, perform an operation corresponding to a program command of applying a set voltage to the RRAM after the operation corresponding to the erase command has been completed, perform an operation of reading resistance data from the RRAM, and provide a response to the outside of the Gaussian sampling apparatus by transmitting the resistance data of the RRAM as Gaussian error data.

Abstract: Disclosed herein are a method for generating Gaussian error data using flash memory and an apparatus using the method. The method includes receiving a request to generate Gaussian error data and delivering an operation command to flash memory; generating Gaussian error noise based on a threshold voltage that is generated when the flash memory performs the operation command; and generating Gaussian error data so as to correspond to the Gaussian error noise and providing the same.

Abstract: Disclosed herein are a Gaussian sampling apparatus and method based on resistive RAM. The Gaussian sampling apparatus based on resistive RAM includes Resistive RAM (RRAM) in which a resistive switching layer is disposed between an upper electrode and a lower electrode, and a sampling controller, wherein the sampling controller is configured to perform an operation corresponding to an erase command of applying a reset voltage to the RRAM when a Gaussian error request is received from an outside of the Gaussian sampling apparatus, perform an operation corresponding to a program command of applying a set voltage to the RRAM after the operation corresponding to the erase command has been completed, perform an operation of reading resistance data from the RRAM, and provide a response to the outside of the Gaussian sampling apparatus by transmitting the resistance data of the RRAM as Gaussian error data.

Abstract: A liquid crystal display device includes first and second substrates and a liquid crystal layer interposed therebetween; a gate line, a data line and a common line over the first substrate in the display area; a thin film transistor connected to the gate line and the data line; a color filter layer over the thin film transistor; a first passivation layer over the color filter layer; an auxiliary common line, inner common electrodes and pixel electrodes over the first passivation layer, wherein the auxiliary common line includes a vertical portion and a horizontal portion, the inner common electrodes extend from the horizontal portion, and the pixel electrodes alternate the inner common electrodes; a light blocking pattern in the non-display area, wherein the light blocking pattern includes the same materials as the color filter layer.

Abstract: A low-power encryption apparatus and method are provided. The low-power encryption apparatus includes a mask value generation unit, a mask value application unit, a round key application unit, a mask operation unit, a shift operation unit, and a shift operation correction unit. The mask value generation unit generates a mask value M having the same bit length as input round function values. The mask value application unit generates first masking round function values by applying the mask value M. The round key application unit generates second masking round function values by applying round key values. The mask operation unit generates third masking round function values by performing a mask addition operation. The shill operation unit generates fourth masking round function values by performing a circular shift operation. The shift operation correction unit generates output round function values by performing an operation using the mask value M.

Abstract: A low-power encryption apparatus and method are provided. The low-power encryption apparatus includes a mask value generation unit, a mask value application unit, a round key application unit, a mask operation unit, a shift operation unit, and a shift operation correction unit. The mask value generation unit generates a mask value M having the same bit length as input round function values. The mask value application unit generates first masking round function values by applying the mask value M. The round key application unit generates second masking round function values by applying round key values. The mask operation unit generates third masking round function values by performing a mask addition operation. The shill operation unit generates fourth masking round function values by performing a circular shift operation. The shift operation correction unit generates output round function values by performing an operation using the mask value M.

Abstract: A liquid crystal display device includes first and second substrates and a liquid crystal layer interposed therebetween; a gate line, a data line and a common line over the first substrate in the display area; a thin film transistor connected to the gate line and the data line; a color filter layer over the thin film transistor; a first passivation layer over the color filter layer; an auxiliary common line, inner common electrodes and pixel electrodes over the first passivation layer, wherein the auxiliary common line includes a vertical portion and a horizontal portion, the inner common electrodes extend from the horizontal portion, and the pixel electrodes alternate the inner common electrodes; a light blocking pattern in the non-display area, wherein the light blocking pattern includes the same materials as the color filter layer.