Abstract: A light guide plate (63) includes a light introducing section (65), which is at a position facing a point light source (62), for confining light from the point light source, and a light guide plate main body (64), which has a thickness smaller than a thickness at an end of the light introducing section on the point light source side, for outputting the confined light to an outside from a light outputting surface by light outputting means (70). The light introducing section (65) has an inclined surface (67), which is inclined from a surface of the light introducing section towards a surface of the light guide plate main body (64). The inclined surface (67) has a directivity converting pattern (68) for converting a directivity expansion in a thickness direction of the light guide plate of the light entered to the light introducing section (65) to directivity characteristics tilted towards a direction parallel to a surface direction of the light guide plate.

Abstract: A surface light source device for preventing the coloring phenomenon in the proximity of a spot light source of a light guide plate making up the surface light source device is disclosed. A spot light source of LED or the like is arranged at an edge of the light guide plate. A multiplicity of deflection patterns having a triangular cross section are arranged on the surface of the light guide plate opposite to the light exiting surface. The light entering the light guide plate are reflected on the deflection patterns and exit from the light exiting surface. The deflection patterns including a plurality of types of deflection patterns having different heights are arranged randomly.

Abstract: Provided is a manufacturing process for a semiconductor wafer according to which semiconductor wafers each with higher flatness can be manufactured with good efficiency from a wafer work having passed through a surface grinding step by enabling restriction of reduction in flatness in the vicinity of the center and in the outer peripheral edge portion of a surface ground wafer at the lowest level possible, and correction of the reduction in flatness of both portions with ease to planarize in a planarization or polishing step. When a semiconductor wafer fixed on a chuck table is surface ground using a cup shaped grinding wheel, the semiconductor wafer is ground toward the center thereof such that the grinding wheel cuts into the semiconductor wafer at the outer peripheral edge thereof and moves away from the semiconductor wafer at the central portion thereof and the ground semiconductor wafer is planarized according to a PACE method.

Abstract: There is disclosed a semiconductor wafer obtained, at least, by removing a mechanical damage layer by etching both surfaces of the wafer, flattening one of the surfaces by a surface-grinding means, polishing both of the surfaces, and then subjecting a front surface of the wafer to a finishing mirror-polishing when defining the surface subjected to surface-grinding as a back surface of the wafer, and a method for fabricating it. There can be provided a method for fabricating a semiconductor wafer wherein grinding striations which remain on a semiconductor wafer even when double side polishing and finishing mirror-polishing are conducted after a conventional step of surface-grinding of the front surface or the both surfaces, are eliminated to improve quality of the front surface of the wafer, and the back surface having a quality suitable for the device process can be obtained, and a semiconductor wafer obtained thereby.

Abstract: There is disclosed a semiconductor wafer obtained, at least, by removing a mechanical damage layer by etching both surfaces of the wafer, flattening one of the surfaces by a surface-grinding means, polishing both of the surfaces, and then subjecting a front surface of the wafer to a finishing mirror-polishing when defining the surface subjected to surface-grinding as a back surface of the wafer, and a method for fabricating it. There can be provided a method for fabricating a semiconductor wafer wherein grinding striations which remain on a semiconductor wafer even when double side polishing and finishing mirror-polishing are conducted after a conventional step of surface-grinding of the front surface or the both surfaces, are eliminated to improve quality of the front surface of the wafer, and the back surface having a quality suitable for the device process can be obtained, and a semiconductor wafer obtained thereby.

Abstract: There is disclosed a semiconductor wafer obtained, at least, by removing a mechanical damage layer by etching both surfaces of the wafer, flattening one of the surfaces by a surface-grinding means, polishing both of the surfaces, and then subjecting a front surface of the wafer to a finishing mirror-polishing when defining the surface subjected to surface-grinding as a back surface of the wafer, and a method for fabricating it. There can be provided a method for fabricating a semiconductor wafer wherein grinding striations which remain on a semiconductor wafer even when double side polishing and finishing mirror-polishing are conducted after a conventional step of surface-grinding of the front surface or the both surfaces, are eliminated to improve quality of the front surface of the wafer, and the back surface having a quality suitable for the device process can be obtained, and a semiconductor wafer obtained thereby.