Abstract: There is provided an opening/closing apparatus which can eliminate the influence of a slight gap formed between a bush and a pin in a link connecting portion of a toggle link mechanism and, in addition, can enhance workability e.g mold replacement, An opening/closing apparatus according to an embodiment includes: a fixed platen 20 to which one mold 21 of a pair of molds is to be mounted; a movable platen 22 to which the other mold 23 is to be mounted; a pressure-receiving platen 24 connected to the fixed platen 20 via tie bars 36; an opening/closing mechanism for opening/closing the molds by moving the movable platen 22 back and forth, including a toggle link mechanism 28 connecting the pressure-receiving platen 24 and the movable platen 22; a first drive mechanism for driving the opening/closing mechanism; and a second drive mechanism 50 for applying a load to the movable platen 22 in a given direction in conjunction with the first drive mechanism.

Abstract: A pattern wafer (10) for LEDs is provided with an uneven structure A (20) having an arrangement with n-fold symmetry substantially on at least a part of the main surface, where in at least a part of the uneven structure A (20), a rotation shift angle ? meets 0°<??(180/n)° in which ? is the rotation shift angle of an arrangement axis A of the uneven structure A (20) with respect to a crystal axis direction in the main surface, and a top of the convex-portion of the uneven structure A (20) is a corner portion with a radius of curvature exceeding “0”. A first semiconductor layer (30), light emitting semiconductor layer (40) and second semiconductor layer (50) are layered on the uneven structure A (20) to constitute an epitaxial wafer (100) for LEDs. It is possible to provide the pattern wafer for LEDs and epitaxial wafer for LEDs with cracks and internal quantum efficiency IQE improved.

Abstract: In an optical substrate (1), a concave-convex structure (12) including a plurality of independent convex portions (131 to 134) and concave portions (14) provided between the convex portions (131 to 134) is provided in a surface. The average interval Pave between the adjacent convex portions (131 to 134) in the concave-convex structure (12) satisfies 50 nm?Pave?1500 nm, and the convex portion (133) having a convex portion height hn satisfying 0.6 h?hn?0 h for the average convex portion height Have is present with a probability Z satisfying 1/10000?Z?1/5. When the optical substrate (1) is used in a semiconductor light-emitting element, dislocations in a semiconductor layer are dispersed to reduce the dislocation density, and thus internal quantum efficiency IQE is improved, and a waveguide mode is removed by light scattering and thus the light the extraction efficiency LEE is increased, with the result that the efficiency of light emission of the semiconductor light-emitting element is enhanced.

Abstract: To provide a substrate for optics for enabling the color shift caused by diffraction of light to be reduced, a substrate for optics (12) is provided with a fine-structure layer including dots (31) comprised of a plurality of convex portions or concave portions extending in the direction of from a main surface of a substrate to outside the surface, the fine-structure layer has a plurality of dot lines in which a plurality of dots is arranged with a pitch (Py) in the first direction inside the main surface of the substrate, while having a plurality of dot lines in which a plurality of dots is arranged with a pitch (Px) in the second direction orthogonal to the first direction inside the main surface of the substrate, and both of the pitch Py and the pitch Px are inconstant intervals and are of nano-order.

Abstract: To provide a fine-structure layered product, and a preparation method of a fine-structure layered product using the fine-structure layered product for enabling a fine concavo-convex structure excellent in environmental resistance, weather resistance and long-term stability to be formed with a large area and high productivity, and provide a manufacturing method of a fine-structure product for enabling a large area to be made with high productivity, a fine-structure layered product of the invention is provided with a substrate, a resin layer that is formed on one main surface of the substrate and that has a fine concavo-convex structure on its surface, and an inorganic layer that is provided on the fine concavo-convex structure of the resin layer and that contains a sol-gel material having a fine concavo-convex structure in a shape associated with the fine concavo-convex structure of the resin layer, where a fluorine element concentration (Es) in a region on the inorganic layer side of the resin layer is higher

Abstract: A light extraction product (1) for a semiconductor light emitting device is provided with a concavo-convex structure layer (11), provided with a concavo-convex structure (11a) on a surface thereof, having a first refractive index (n1) and a light extraction layer (12), provided on the convex portion of the concavo-convex structure (11a), having a second refractive index (n2), where in a first light extraction layer (12a) a distance Lcv between an average position Sh of tops of the convex-portions and a convex-portion upper interface average position Scv of the first light extraction layer (12a) meets equation (1) 10 nm?Lcv?5000 nm, in the concavo-convex structure (11a) a convex-portion average height H meets equation (2) 10 nm?H?5000 nm, an average pitch P meets equation (3) 50 nm?P?5000 nm, and the distance Lcv and the convex-portion average height H meet equation (4) 50 nm?Lcv+H?6000 nm.

Abstract: To provide a substrate for optics provided with a fine-structure product which improves luminous efficiency of an LED while improving internal quantum efficiency IQE by decreasing the number of dislocation defects in a semiconductor layer, a substrate for optics (1) is provided with a fine-structure layer (12) including dots comprised of a plurality of convex portions (13) extending in the direction of from the main surface of a substrate (11) to outside the surface, where the fine-structure layer (12) has a plurality of dot lines (13-1 to 13-N) in which a plurality of dots is arranged with a pitch Py in the first direction in the main surface of the substrate (11), while having the plurality of dot lines in which a plurality of dots is arranged with a pitch Px in the second direction orthogonal to the first direction in the main surface of the substrate (11), one of the pitch Py and the pitch Px is a constant interval of nano-order, while the other one is an inconstant interval of nano-order, or both are inc

Abstract: A pattern wafer (10) for LEDs is provided with an uneven structure A (20) having an arrangement with n-fold symmetry substantially on at least a part of the main surface, where in at least a part of the uneven structure A (20), a rotation shift angle ? meets 0°<??(180/n)° in which ? is the rotation shift angle of an arrangement axis A of the uneven structure A (20) with respect to a crystal axis direction in the main surface, and a top of the convex-portion of the uneven structure A (20) is a corner portion with a radius of curvature exceeding “0”. A first semiconductor layer (30), light emitting semiconductor layer (40) and second semiconductor layer (50) are layered on the uneven structure A (20) to constitute an epitaxial wafer (100) for LEDs. It is possible to provide the pattern wafer for LEDs and epitaxial wafer for LEDs with cracks and internal quantum efficiency IQE improved.

Abstract: An optical substrate PP (10) is provided with a substrate body, and a concavo-convex structure (20) comprised of a plurality of convex portions (20a) provided on the main surface of the substrate body, where at least one pattern (X) observable with an optical microscope is drawn on the main surface, an interval of the pattern (X) is larger than a pitch of the concavo-convex structure (20), and in an optical microscope image of the pattern (X), a first region (Xa) is capable of being distinguished from a second region (Xb) by a difference in light and dark, a plurality of first regions (Xa) is arranged apart from one another at intervals, and the second region (Xb) connects between the first regions (Xa), so as to concurrently actualize increases in internal quantum efficiency IQE and improvements in light extraction efficiency LEE of a semiconductor light emitting device which have been mutually tradeoffs.

Abstract: Disclosed is a layered product for fine pattern formation and a method of manufacturing the layered product for fine pattern formation, capable of easily forming a fine pattern having a thin or no remaining film in order to form a fine pattern having a high aspect ratio on a processing object. The layered product for fine pattern formation (1) of the present invention used to form a fine pattern (220) in a processing object (200) using a first mask layer (103) includes: a mold (101) having a concavo-convex structure (101a) on a surface; and a second mask layer (102) provided on the concavo-convex structure (101a), wherein in the second mask layer (102), a distance (lcc) and a height (h) of the concavo-convex structure (101a) satisfy Formula (1) 0<lcc<1.0 h, and a distance (lcv) and the height (h) satisfy Formula (2) 0?lcv?0.05 h.

Abstract: A convey device, which conveys an insert member into a die, includes a holding device configured to hold the insert member in an attitude in which a major surface of the insert member is in a substantially gravitational direction; a convey mechanism configured to convey the insert member to the die, while the insert member is being held in the attitude by the holding device; and a heating device configured to heat the insert member. The insert member can be heated by the heating device before the insert member is disposed in the die.

Abstract: A function transfer product (14) is provided with a carrier (10) having a concavo-convex structure (11) of nanostructure, and a functional layer (12) provided on the concavo-convex structure (11). The functional layer (12) is beforehand provided on the surface of the concavo-convex structure (11), and is directly brought into contact with one main surface of a target object (20), and then the carrier (10) is removed from the functional layer (12) to transfer the functional layer (12) to the target object (20). An average pitch of the concavo-convex structure (11) ranges from 1 nm to 1500 nm, the functional layer (12) contains a resin, and a ratio (Ra/lor) between surface roughness (Ra) on the exposed surface side of the functional layer (12) and a distance between a top position of a convex-portion of the concavo-convex structure (11) and the exposed surface of the functional layer (12) is 1.2 or less.

Abstract: A first mask layer (13) and a second mask layer (12) are transferred and imparted to a target object (20) using a fine-pattern-forming film (I) provided with a cover film (10) having a nanoscale concavo-convex structure (11) formed on one surface thereof, a second mask layer (12) provided in a recess of the concavo-convex structure (11), and a first mask layer (13) provided so as to cover the concavo-convex structure (11) and the second mask layer (12). A surface of a fine-pattern-forming film (II) to which the first mask layer (13) is provided is pressed toward a surface of the target object (20), energy rays are irradiated to the first mask layer (13), and the cover film (10) is then separated from the second mask layer (12) and the first mask layer (13). Pressing and energy ray irradiation are each performed independently. The target object is etched using the second mask layer (12) and the first mask layer (13).

Abstract: A light extraction product (1) for a semiconductor light emitting device is provided with a concavo-convex structure layer (11), provided with a concavo-convex structure (11a) on a surface thereof, having a first refractive index (n1) and a light extraction layer (12), provided on the convex portion of the concavo-convex structure (11a), having a second refractive index (n2), where in a first light extraction layer (12a) a distance Lcv between an average position Sh of tops of the convex-portions and a convex-portion upper interface average position Scv of the first light extraction layer (12a) meets equation (1) 10 nm?Lcv?5000 nm, in the concavo-convex structure (11a) a convex-portion average height H meets equation (2) 10 nm?H?5000 nm, an average pitch P meets equation (3) 50 nm?P?5000 nm, and the distance Lcv and the convex-portion average height H meet equation (4) 50 nm?Lcv+H?6000 nm.

Abstract: In an optical substrate (1), a concave-convex structure (12) including a plurality of independent convex portions (131 to 134) and concave portions (14) provided between the convex portions (131 to 134) is provided in a surface. The average interval Pave between the adjacent convex portions (131 to 134) in the concave-convex structure (12) satisfies 50 nm?Pave?1500 nm, and the convex portion (133) having a convex portion height hn satisfying 0.6 h?hn?0 h for the average convex portion height Have is present with a probability Z satisfying 1/10000?Z?1/5. When the optical substrate (1) is used in a semiconductor light-emitting element, dislocations in a semiconductor layer are dispersed to reduce the dislocation density, and thus internal quantum efficiency IQE is improved, and a waveguide mode is removed by light scattering and thus the light the extraction efficiency LEE is increased, with the result that the efficiency of light emission of the semiconductor light-emitting element is enhanced.

Abstract: A resist layered product (30) is provided with an inorganic substrate (21), first resist layer (22) provided on one main surface of the inorganic substrate (21), and second resist layer (23), provided on the first resist layer (22), provided with a concavo-convex structure (23a) on its surface. In the concavo-convex structure (23a), a thickness of a residual film after transfer is 50 nm or less, the ratio (lcv/lcc) of a top width of convex-portion (lcv) to an opening width of concave-portion (lcc) of a fine pattern of a mold is in a predetermined range, and the ratio (Vr2/Vcm) between a concave-portion volume (Vcm) of the fine pattern of the mold and a volume (Vr2) of the second resist layer (23) is in a predetermined range. It is possible to easily form a resist mask (25) having a thin and uniform residual film on the inorganic substrate (21).

Abstract: To provide a substrate for optics for enabling the color shift caused by diffraction of light to be reduced, a substrate for optics (12) is provided with a fine-structure layer including dots (31) comprised of a plurality of convex portions or concave portions extending in the direction of from a main surface of a substrate to outside the surface, the fine-structure layer has a plurality of dot lines in which a plurality of dots is arranged with a pitch (Py) in the first direction inside the main surface of the substrate, while having a plurality of dot lines in which a plurality of dots is arranged with a pitch (Px) in the second direction orthogonal to the first direction inside the main surface of the substrate, and both of the pitch Py and the pitch Px are inconstant intervals and are of nano-order.

Abstract: Disclosed is a layered product for metamaterial transfer for transferring a metamaterial layer onto a substrate, including: a resin mold having a fine convex-concave structure on a surface; and an inorganic layer as a metamaterial layer including at least one dielectric layer and at least one metal layer deposited on a surface of the resin mold, wherein resin of the resin mold contains fluorine, and a ratio between an average elemental fluorine concentration Eb of the resin and an elemental fluorine concentration Es of the surface of the resin mold satisfies the following equation: 200?Es/Eb?5.0.

Abstract: To provide a substrate for optics provided with a fine-structure product which improves luminous efficiency of an LED while improving internal quantum efficiency IQE by decreasing the number of dislocation defects in a semiconductor layer, a substrate for optics (1) is provided with a fine-structure layer (12) including dots comprised of a plurality of convex portions (13) extending in the direction of from the main surface of a substrate (11) to outside the surface, where the fine-structure layer (12) has a plurality of dot lines (13-1 to 13-N) in which a plurality of dots is arranged with a pitch Py in the first direction in the main surface of the substrate (11), while having the plurality of dot lines in which a plurality of dots is arranged with a pitch Px in the second direction orthogonal to the first direction in the main surface of the substrate (11), one of the pitch Py and the pitch Px is a constant interval of nano-order, while the other one is an inconstant interval of nano-order, or both are inc

Abstract: Disclosed is a layered product for fine pattern formation and a method of manufacturing the layered product for fine pattern formation, capable of easily forming a fine pattern having a thin or no remaining film in order to form a fine pattern having a high aspect ratio on a processing object. The layered product for fine pattern formation (1) of the present invention used to form a fine pattern (220) in a processing object (200) using a first mask layer (103) includes: a mold (101) having a concavo-convex structure (101a) on a surface; and a second mask layer (102) provided on the concavo-convex structure (101a), wherein in the second mask layer (102), a distance (lcc) and a height (h) of the concavo-convex structure (101a) satisfy Formula (1) 0<lcc<1.0 h, and a distance (lcv) and the height (h) satisfy Formula (2) 0?lcv?0.05 h.