Abstract: A photoelectric conversion element according to one embodiment of the disclosure includes a photoelectric conversion region inside a semiconductor layer. The photoelectric conversion region includes a region in which a depletion region is to be formed by voltage application to the semiconductor layer. The semiconductor layer has a first main surface and a second main surface. The depletion region converts light into a photoelectron, in which the light enters from side on which the first main surface is disposed. The photoelectric conversion element further includes an isoelectronic trap region in the region in which the depletion region is to be formed.

Abstract: A photoelectric conversion element according to one embodiment of the disclosure includes a photoelectric conversion region inside a semiconductor layer. The photoelectric conversion region includes a region in which a depletion region is to be formed by voltage application to the semiconductor layer. The semiconductor layer has a first main surface and a second main surface. The depletion region converts light into a photoelectron, in which the light enters from side on which the first main surface is disposed. The photoelectric conversion element further includes an isoelectronic trap region in the region in which the depletion region is to be formed.

Abstract: There is provided a semiconductor device including a first region which, in an oxide semiconductor layer, has a higher carrier concentration than a channel region immediately below a gate electrode formed over the oxide semiconductor layer and is formed at least in a partial region other than the channel region, and a second region which, in the oxide semiconductor layer, has a higher carrier concentration than the first region and is formed farther from the channel region than the first region. The first region is formed through a first reduction reaction by stacking a first reduction reaction film over the oxide semiconductor layer and reducing the oxide semiconductor layer by the first reduction reaction film. The second region is formed through a second reduction reaction by stacking a second reduction reaction film over the oxide semiconductor layer and reducing the oxide semiconductor layer by the second reduction reaction film.

Abstract: An ion injection simulation method includes: calculating a reinjection dose injected into a substrate and a structure formed on the substrate and reinjected from a side face of the structure; and calculating concentration distribution of impurities injected into the substrate from a distribution function and reinjection conditions of the reinjection dose.

Abstract: An ion injection simulation method includes: calculating a reinjection dose injected into a substrate and a structure formed on the substrate and reinjected from a side face of the structure; and calculating concentration distribution of impurities injected into the substrate from a distribution function and reinjection conditions of the reinjection dose.