Abstract: A semiconductor device includes a substrate, an active pattern disposed on the substrate and extending in a first direction, gate electrodes covering the active pattern and extending in a second direction, a gate spacer disposed on a sidewall of each of the gate electrodes, a source/drain pattern disposed between adjacent ones of the gate electrodes, an etch stop film disposed along a sidewall of the gate spacer and a profile of the source/drain pattern, an interlayer insulating film disposed between the adjacent ones of the gate electrodes with a contact trench exposing the source/drain pattern defined therein, a liner film disposed on an outer sidewall of the contact trench, and a source/drain contact disposed on the liner film and filling the contact trench, in which the source/drain contact is connected to the source/drain pattern. At least a portion of the liner film may be disposed in the source/drain pattern.

Abstract: A motor drive device includes: a first inverter including a plurality of first switching elements and connected to a plurality of coils; a second inverter including a plurality of second switching elements and connected to the plurality of coils; a plurality of transfer switching elements connected to the second ends; a capacitor disposed at one side of a casing of a motor; first and second cooling channels disposed at both sides of the capacitor; a plurality of first power modules including some of the plurality of first switching elements and some of the transfer switching elements; and a plurality of second power modules including some of the plurality of second switching elements.

Abstract: Provided is a vapor phase self-assembled monolayer (SAM) coating apparatus having a small volume and reduced manufacturing costs. The apparatus includes: a chamber for providing space in which at least one substrate is mounted; one or more injection apparatuses, installed at a side of the chamber and in the form of an injector; and one or more supply units for supplying a liquid precursor into the precursor injection apparatus.

Abstract: A power management system for semiconductor manufacturing prevents malfunctions of loading devices when transient power interruption occurs by maintaining power to the facilities for a period of time after the transient power interruption occurs. The system includes an emergency cutoff circuit, a first power controller, and a second power controller. The emergency cutoff circuit prevents trips in a power relay for one second at the time of transient power interruption. The first power controller discharges a DC voltage for a predetermined time period when AC power is not supplied through a power supply line thereto due to transient power interruption. The second power controller receives the DC voltage provided from the first power controller and discharges the DC voltage during a transient power interruption.

Abstract: A power management system for semiconductor manufacturing prevents malfunctions of loading devices when transient power interruption occurs by maintaining power to the facilities for a period of time after the transient power interruption occurs. The system includes an emergency cutoff circuit, a first power controller, and a second power controller. The emergency cutoff circuit prevents trips in a power relay for one second at the time of transient power interruption. The first power controller discharges a DC voltage for a predetermined time period when AC power is not supplied through a power supply line thereto due to transient power interruption. The second power controller receives the DC voltage provided from the first power controller and discharges the DC voltage during a transient power interruption.