Abstract: Provided are a surface treatment agent that can effectively suppress pattern collapse of an inorganic pattern or resin pattern provided on a substrate, a surface treatment method using such a surface treatment agent, as well as a surface treatment agent that can carry out silylation treatment to a high degree on the surface of a substrate, and a surface treatment method using such a surface treatment agent. A surface treatment agent is used that is employed in hydrophobization treatment of a substrate surface and includes a silylation agent containing at least one compound having a disilazane structure and a solvent containing a five- or six-membered ring lactone compound.

Abstract: Problem: To provide a cleaning liquid for lithography and a cleaning method using it for photoexposure devices. In a process of liquid immersion lithography, the cleaning liquid may efficiently clean the photoexposure device site (especially optical lens member) contaminated with the component released from photoresist and remove the contaminant, and in addition, the waste treatment for the cleaning liquid is easy, the efficiency in substitution with the cleaning liquid for the medium for liquid immersion lithography is high, and the cleaning liquid does not detract from the throughput in semiconductor production.

Abstract: Problem: To provide a cleaning liquid and a cleaning method having excellent leaning capability. In a process of liquid immersion lithography, they can preventing the damage to be caused by the component released from the photoresist to photoexposure devices; the waste treatment is easy; the efficiency in substitution with the cleaning liquid for the medium for liquid immersion lithography is high, and the production cost is reduced not detracting from the throughput in semiconductor production. Means for Solution: A cleaning liquid to be used for cleaning a photoexposure device in a process of liquid immersion lithography, which comprises at least 5% by mass of a nonionic surfactant containing at least one group selected from an ethyleneoxy group, a propyleneoxy group and a polyglycerin group, and a balance of water; and a cleaning method using it.

Abstract: The object is to provide a surface treatment agent that can effectively prevent pattern collapse of an inorganic pattern or resin pattern provided on a substrate, and a surface treatment method using such a surface treatment agent. In addition, as another object, the present invention has an object of providing a surface treatment agent that can carry out silylation treatment to a high degree on the surface of a substrate, and a surface treatment method using such a surface treatment agent. The surface treatment agent used in the surface treatment of a substrate contains a silylation agent and a silylated heterocyclic compound.

Abstract: The invention provides a novel rinse solution used in the step of rinse treatment of a patterned photoresist layer developed with an aqueous alkaline developer solution in a photolithographic process for the manufacture of semiconductor devices and liquid crystal display panels. The rinse solution provided by the invention is an aqueous solution of a nitrogen-containing heterocyclic compound such as imidazoline, pyridine and the like in a concentration up to 10% by mass. Optionally, the rinse solution of the invention further contains a water-miscible alcoholic or glycolic organic solvent and/or a water-soluble resin. The invention also provides a lithographic method for the formation of a patterned photoresist layer including a step of rinse treatment of an alkali-developed resist layer with the rinse solution defined above. The invention provides an improvement on the lithographic process in respect of the product quality and efficiency of the process.

Abstract: Disclosed is a cleaning liquid for lithography which is characterized by containing a mixed organic solvent which is obtained by mixing (A) at least one solvent selected from ketone organic solvents and glycol ether organic solvents, (B) at least one solvent selected from lactone organic solvents and (C) at least one solvent selected from alkoxy benzenes and aromatic alcohols. This cleaning liquid is highly safe and does not have adverse effects on the environment or the human body, while having basic characteristics necessary for a cleaning liquid for lithography. In addition, this cleaning liquid can be stably supplied at low cost.

Abstract: A method of producing a high-quality product without damaging the physical properties of a pattern to be formed by a rinsing process based on a principle totally different from that for a conventional pattern collapse preventing method. A method for forming a resist pattern by subjecting a photo-resist layer provided on a substrate to image-forming exposure and then developing the resultant layer, wherein the resist pattern is formed, after the developing process, by the process of reducing a contact angle with respect to a contact liquid on the surface of the resist pattern to up to 40 degrees, then by the process of increasing it to at least 70 degrees, and further by drying it.

Abstract: Provided are a fine pattern forming method for forming a fine resin pattern having an excellent shape on a supporting body, and a coat film forming material used in the fine pattern forming method. A photosensitive resin composition is applied on the supporting body, selectively exposed and developed to form a first resin pattern. On the surface of the first resin pattern, a coat film composed of a water-soluble resin film is formed to form a coat pattern, then, on the supporting body whereupon the coat pattern is formed, a resin composition containing a photo-acid generating agent is applied, and the entire surface is exposed. Then, the work is cleaned by a solvent, and a second resin pattern wherein a resin film is formed on the surface of the coat pattern is formed. The coat film is formed by using the coat film forming material composed of an aqueous solution containing a water soluble resin and a water soluble cross-linking agent.

Abstract: Provided are a cleaning liquid for lithography capable of suppressing occurrence of CD shift without inhibiting the effect of preventing pattern collapse by a surfactant, and a pattern formation method using the cleaning liquid for lithography. A cleaning liquid for lithography containing (A) an anionic surfactant, (B) an amine compound, and (C) water. In the cleaning liquid for lithography of the present invention, the anionic surfactant and the amine compound form a salt in the cleaning liquid for lithography, and thus penetration of the anionic surfactant into a resist film can be suppressed. Therefore, even when a method for forming a resist pattern is performed, the resist film is not dissolved by using the cleaning liquid for lithography of the present invention, whereby occurrence of CD shift can be efficiently suppressed.

Abstract: This invention provides a novel cleaning liquid for lithography that, for a photoresist pattern, is used for reducing a surface defect, that is, defect, of a product, preventing pattern collapse during water rinsing, and further imparting electron beam irradiation resistance to a resist to suppress pattern shrinkage. Further, in the novel cleaning liquid for lithography, bacteria contamination does not occur during storage. The cleaning liquid for lithography comprises an aqueous solution containing an amine oxide compound represented by general formula wherein R1 represents an alkyl or hydroxyalkyl group having 8 to 20 carbon atoms which may be interrupted by an oxygen atom; and R2 and R3 represent an alkyl or hydroxyalkyl group having 1 to 5 carbon atoms.

Abstract: The invention provides a novel rinsing fluid which can convert an easily wettable resist pattern surface having a contact angle of 40° or below into one having a contact angle of 70° or above to inhibit pattern collapse effectively and thereby give high-quality products.

Abstract: A composition for forming an anti-reflection film for use in forming an anti-reflection film on a resist film is provided, the composition for forming an anti-reflection film being easily handled, and capable of forming an anti-reflection film having superior optical characteristics similarly to anti-reflection films formed using PFOS. A composition for forming an anti-reflection film to be provided on a resist film which includes a certain fluorine compound. This composition for forming an anti-reflection film can form an anti-reflection film having superior optical characteristics since the certain fluorine compound contributes to improvement of the optical characteristics of the anti-reflection film.

Abstract: A composition for forming an anti-reflection film on a resist film is provided, which is superior in handling characteristics, and is not accompanied by generation of deposits and the like after forming the film. A composition for forming an anti-reflection film to be provided on a resist film is provided, which includes at least a certain fluorochemical surfactant, and a certain water soluble film forming component. The composition for forming an anti-reflection film can be easily handled, has no adverse effect on health or the environment, and also avoids the generation of deposits and the like even after forming an anti-reflection film.

Abstract: A novel method for forming a pattern capable of decreasing the number of steps in a double patterning process, and a material for forming a coating film suitably used in the method for forming a pattern are provided. First resist film (2) is formed by applying a first chemically amplified resist composition on support (1), and thus formed film is selectively exposed, and developed to form multiple first resist patterns (3). Next, on the surface of the first resist patterns (3) are formed multiple coating patterns (5) by forming coating films (4) constituted with a water soluble resin film, respectively. Furthermore, a second chemically amplified resist composition is applied on the support (1) having the coating pattern (5) formed thereon to form second resist film (6), which is selectively exposed and developed to form multiple second resist patterns (7). Accordingly, a pattern including the coating patterns (5) and the second resist patterns (7) is formed on the support (1).

Abstract: The anti-reflection film forming material according to the present invention includes (a) a water soluble resin having a vinyl acetate constituent unit, and (b) a compound having a constituent unit represented by the following general formula. Wherein, R1 and R2 represent a direct bond or a methylene chain; R3 and R4 represent a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, or a group represented by —(CH2)n—O—R5—R6; and at least one of R3 and R4 is a group represented by —(CH2)n—O—R5—R6, wherein: R5 represents a direct bond or an alkylene chain having 1 to 10 carbon atoms which may be interrupted with —O—; R6 represents an alkyl group having 1 to 10 carbon atoms in which a portion or all hydrogen atoms are substituted with a fluorine atom; and n represents an integer of 0 to 10. Wherein, the total number of carbon atoms present in R1 and R2 is 1 or 2.

Abstract: A cleaning liquid for lithography that exhibits equally excellent cleaning performance for resists of a wide variety of compositions, such as various resists for i-line, KrF and ArF, silicic resist and chemical amplification type positive resist, and that excels in post-treatment dryability, being free from any deterioration of resist performance by cleaning. There is provided a cleaning liquid for lithography, comprising at least one member (A) selected from among lower alkyl esters of acetic acid and propionic acid and at least one member (B) selected from among ketones having 5 to 7 carbon atoms per molecule in a mass ratio of (A):(B) of 4:6 to 7:3.

Abstract: Disclosed is a cleaning liquid for lithography which is characterized by containing a mixed organic solvent which is obtained by mixing (A) at least one solvent selected from ketone organic solvents and glycol ether organic solvents, (B) at least one solvent selected from lactone organic solvents and (C) at least one solvent selected from alkoxy benzenes and aromatic alcohols. This cleaning liquid is highly safe and does not have adverse effects on the environment or the human body, while having basic characteristics necessary for a cleaning liquid for lithography. In addition, this cleaning liquid can be stably supplied at low cost.

Abstract: Conventional detergents for lithography which contain a surfactant as an active ingredient should have a reduced surfactant concentration because heightened surfactant concentrations result in dissolution of the resin component of a photoresist composition and hence in a dimensional change of a resist pattern. However, the conventional detergents have had a drawback that such a low concentration unavoidably reduces the ability to inhibit pattern falling and defect occurrence. A detergent for lithography is provided which is an aqueous solution containing (A) at least one member selected among nitrogenous cationic surfactants and nitrogenous ampholytic surfactants and (B) an anionic surfactant. This detergent retains a low surface tension even when it has a low concentration. It is effective in inhibiting pattern falling and defect occurrence. It can also inhibit resist patterns from fluctuating in dimension.

Abstract: A cleaning liquid for lithography that exhibits equally excellent cleaning performance for resists of a wide variety of compositions, such as various resists for i-line, KrF and ArF, silicic resist and chemical amplification type positive resist, and that excels in post-treatment dryability, being free from any deterioration of resist performance by cleaning. There is provided a cleaning liquid for lithography, comprising at least one member (A) selected from among lower alkyl esters of acetic acid and propionic acid and at least one member (B) selected from among ketones having 5 to 7 carbon atoms per molecule in a mass ratio of (A):(B) of 4:6 to 7:3.

Abstract: This invention provides a novel rinsing liquid for lithography, which, for a photoresist pattern, can reduce surface defects, the so-called defects, without sacrificing the quality of the product, and, at the same time, can impart resistance to electron beam irradiation to suppress the shrinkage of the resist pattern, and a method for resist pattern formation using the same.