Abstract: A method for making nanostructure is provided. The method includes following steps. A conductive layer including a graphene film is applied on an insulating substrate. A resist layer is placed on the conductive layer. A number of openings are formed by patterning the resist layer via electron beam lithography. A part of the conductive layer is exposed to form a first exposed portion through the plurality of openings. The first exposed portion of the conductive layer is removed to expose a part of the insulting substrate to form a second exposed portion. A preform layer is introduced on the second exposed portion of the insulating substrate. Remaining resist layer and remaining conductive layer are eliminated. A number of nanostructures are formed.

Abstract: A polarized light detection system includes a detection apparatus, a power source, and a photoresistor. The detection apparatus, power source and photoresistor are electrically connected with wires to form a galvanic circle. The photoresistor includes a photosensitive material layer with a first surface and a second surface opposite to each other, a first electrode layer located on the first surface of the photosensitive material layer, and a second electrode layer located on the second surface of the photosensitive material layer. The first electrode layer includes a carbon nanotube film structure.

Abstract: A thin film transistor is provided. The thin film transistor includes a source electrode, a drain electrode, a semiconducting layer, a transition layer, an insulating layer and a gate electrode. The drain electrode is spaced apart from the source electrode. The gate electrode is insulated from the source electrode, the drain electrode, and the semiconductor layer by the insulating layer. The transition layer is sandwiched between the insulating layer and the semiconductor layer. The transition layer is a silicon-oxide cross-linked polymer layer including a plurality of Si atoms. The plurality of Si atoms is bonded with atoms of the insulating layer and atoms of the semiconductor layer.

Abstract: A photoresistor includes a first electrode layer, a photosensitive material layer, and a second electrode layer. The first electrode layer, photosensitive material layer and second electrode layer are stacked with each other. The first electrode layer is located on a first surface of the photosensitive material layer. The second electrode layer is located on a second surface of the photosensitive material layer. The first surface and second surface of the photosensitive material layer are opposite to each other. The first electrode layer includes a carbon nanotube film structure.

Abstract: A method for detecting polarized light is disclosed. Providing a polarized light detection system including a photoresistor, a power source and a detection apparatus. The photoresistor includes a first electrode layer and a photosensitive material layer. The detection apparatus includes a current detection device and a computer analysis system. An incident light is irradiated onto a surface of the photoresistor. Polarization information of the incident light is identified by the photoresistor. Current change in the photoresistor is detected by the current detection device. The polarization information of the incident light is analyzed by the computer analysis system.

Abstract: A method for making nanostructure is provided. The method includes following steps. A conductive layer including a graphene film is applied on an insulating substrate. A resist layer is placed on the conductive layer. A number of openings are formed by patterning the resist layer via electron beam lithography. A part of the conductive layer is exposed to form a first exposed portion through the plurality of openings. The first exposed portion of the conductive layer is removed to expose a part of the insulting substrate to form a second exposed portion. A preform layer is introduced on the second exposed portion of the insulating substrate. Remaining resist layer and remaining conductive layer are eliminated. A number of nanostructures are formed.

Abstract: A thin film transistor is provided. The thin film transistor includes a source electrode, a drain electrode, a semiconducting layer, a transition layer, an insulating layer and a gate electrode. The drain electrode is spaced apart from the source electrode. The gate electrode is insulated from the source electrode, the drain electrode, and the semiconductor layer by the insulating layer. The transition layer is sandwiched between the insulating layer and the semiconductor layer. The transition layer is a silicon-oxide cross-linked polymer layer including a plurality of Si atoms. The plurality of Si atoms is bonded with atoms of the insulating layer and atoms of the semiconductor layer.

Abstract: A photoresistor includes a first electrode layer, a photosensitive material layer, and a second electrode layer. The first electrode layer, photosensitive material layer and second electrode layer are stacked with each other. The first electrode layer is located on a first surface of the photosensitive material layer. The second electrode layer is located on a second surface of the photosensitive material layer. The first surface and second surface of the photosensitive material layer are opposite to each other. The first electrode layer includes a carbon nanotube film structure.

Abstract: A polarized light detection system includes a detection apparatus, a power source, and a photoresistor. The detection apparatus, power source and photoresistor are electrically connected with wires to form a galvanic circle. The photoresistor includes a photosensitive material layer with a first surface and a second surface opposite to each other, a first electrode layer located on the first surface of the photosensitive material layer, and a second electrode layer located on the second surface of the photosensitive material layer. The first electrode layer includes a carbon nanotube film structure.

Abstract: A method for detecting polarized light is disclosed. Providing a polarized light detection system including a photoresistor, a power source and a detection apparatus. The photoresistor includes a first electrode layer and a photosensitive material layer. The detection apparatus includes a current detection device and a computer analysis system. An incident light is irradiated onto a surface of the photoresistor. Polarization information of the incident light is identified by the photoresistor. Current change in the photoresistor is detected by the current detection device. The polarization information of the incident light is analyzed by the computer analysis system.

Abstract: A method for measuring a contacting thermal resistance of one-dimensional structures is provided. A first one-dimensional structure and A second one-dimensional structure are crossed and in contact with each other to form a suspended junction. A point P of the first one-dimensional structure is heated until the first one-dimensional structure and the second one-dimensional structure reach a thermal equilibrium. A point A and a point B are selected on the first one-dimensional structure and a point C and a point D are selected on the second one-dimensional structure, wherein the point B, the point A, the suspended junction, the point C and the point D are arranged equidistantly with a distance ?x. A temperature difference ?Tj is calculated by the formula ?Tj=?TAC??TBA??TCD. The heat flux Qj is calculated by the formula Qj=2k?TCD/?x. The contacting thermal resistance Rj is calculated by the formula Rj=?Tj/Qj.