Patents by Inventor Jun Kumasaka

Jun Kumasaka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9556035
    Abstract: A particle formed of silica and carbon having a low impurity content and an excellent reactivity is provided. Also provided is a method of producing a silica and carbon-containing material including: (B) a carbon mixing step of mixing an aqueous alkali silicate solution having a silicon concentration within the liquid portion of at least 10 wt % with carbon so as to obtain a carbon-containing aqueous alkali silicate solution; and (C) a silica recovery step of mixing the carbon-containing aqueous alkali silicate solution with a mineral acid so as to cause carbon and silicon within the liquid portion to precipitate as particles formed of silica and carbon and thus obtaining a particle-containing liquid substance, then solid-liquid separating the liquid substance so as to obtain a solid portion of a silica and carbon-containing material which is an assembly of particles formed of silica and carbon and a liquid portion containing impurities.
    Type: Grant
    Filed: July 3, 2012
    Date of Patent: January 31, 2017
    Assignee: TAIHEIYO CEMENT CORPORATION
    Inventors: Kouki Ichitsubo, Kenta Masuda, Masakazu Suzuki, Kohei Kawano, Jun Kumasaka
  • Patent number: 9382121
    Abstract: A high-purity silicon carbide powder and its production method enable mass production of the high-purity silicon carbide powder at low cost in a safe manner. The content of impurities in the silicon carbide powder is 500 ppm or less. The silicon carbide powder can be obtained by heating a raw material for silicon carbide production in an Acheson furnace using a heat generator. The raw material for silicon carbide production is prepared by mixing a siliceous raw material and a carbonaceous raw material. The raw material for silicon carbide production contains the siliceous raw material and the carbonaceous raw material at a mixture mole ratio (C/SiO2) of 2.5 to 4.0 and has a content of impurities of 120 ppm or less.
    Type: Grant
    Filed: August 23, 2012
    Date of Patent: July 5, 2016
    Assignee: TAIHEIYO CEMENT CORPORATION
    Inventors: Kenta Masuda, Kouki Ichitsubo, Kohei Kawano, Masakazu Suzuki, Jun Kumasaka, Hideaki Tanaka
  • Publication number: 20140301933
    Abstract: A high-purity silicon carbide powder and its production method enable mass production of the high-purity silicon carbide powder at low cost in a safe manner. The content of impurities in the silicon carbide powder is 500 ppm or less. The silicon carbide powder can be obtained by heating a raw material for silicon carbide production in an Acheson furnace using a heat generator. The raw material for silicon carbide production is prepared by mixing a siliceous raw material and a carbonaceous raw material. The raw material for silicon carbide production contains the siliceous raw material and the carbonaceous raw material at a mixture mole ratio (C/SiO2) of 2.5 to 4.0 and has a content of impurities of 120 ppm or less.
    Type: Application
    Filed: August 23, 2012
    Publication date: October 9, 2014
    Applicant: TAIHEIYO CEMENT CORPORATION
    Inventors: Kenta Masuda, Kouki Ichitsubo, Kohei Kawano, Masakazu Suzuki, Jun Kumasaka, Hideaki Tanaka