Patents by Inventor Jun Kuroiwa
Jun Kuroiwa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8598640Abstract: A solid-state imaging device with a structure such that an electrode for reading a signal charge is provided on one side of a light-receiving sensor portion constituting a pixel; a predetermined voltage signal V is applied to a light-shielding film formed to cover an image pickup area except the light-receiving sensor portion; a second-conductivity-type semiconductor area is formed in the center on the surface of a first-conductivity-type semiconductor area constituting a photo-electric conversion area of the light-receiving sensor portion; and areas containing a lower impurity concentration than that of the second-conductivity-type semiconductor area is formed on the surface of the first-conductivity-type semiconductor area at the end on the side of the electrode and at the opposite end on the side of a pixel-separation area.Type: GrantFiled: August 17, 2011Date of Patent: December 3, 2013Assignee: Sony CorporationInventors: Yoshiaki Kitano, Hideshi Abe, Jun Kuroiwa, Kiyoshi Hirata, Hiroaki Ohki, Nobuhiro Karasawa, Ritsuo Takizawa, Mitsuru Yamashita, Mitsuru Sato, Katsunori Kokubun
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Patent number: 8110707Abstract: A fatty acid salt of an alkyl quaternary ammonium is used as a novel surfactant which is a cationic surfactant having high detergency and low foaming property.Type: GrantFiled: December 12, 2008Date of Patent: February 7, 2012Assignees: Aisin AW Co., Ltd., Chuo Chemical Co., Ltd.Inventors: Toshiaki Iwase, Jun Kuroiwa, Masanori Yoshida, Katsuya Uenishi, Kouei Murayama
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Publication number: 20110298024Abstract: A solid-state imaging device with a structure such that an electrode for reading a signal charge is provided on one side of a light-receiving sensor portion constituting a pixel; a predetermined voltage signal V is applied to a light-shielding film formed to cover an image pickup area except the light-receiving sensor portion; a second-conductivity-type semiconductor area is formed in the center on the surface of a first-conductivity-type semiconductor area constituting a photo-electric conversion area of the light-receiving sensor portion; and areas containing a lower impurity concentration than that of the second-conductivity-type semiconductor area is formed on the surface of the first-conductivity-type semiconductor area at the end on the side of the electrode and at the opposite end on the side of a pixel-separation area.Type: ApplicationFiled: August 17, 2011Publication date: December 8, 2011Applicant: SONY CORPORATIONInventors: Yoshiaki Kitano, Hideshi Abe, Jun Kuroiwa, Kiyoshi Hirata, Hiroaki Ohki, Nobuhiro Karasawa, Ritsuo Takizawa, Mitsuru Yamashita, Mitsuru Sato, Katsunori Kokubun
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Patent number: 8017984Abstract: A solid-state imaging device with a structure such that an electrode for reading a signal charge is provided on one side of a light-receiving sensor portion constituting a pixel; a predetermined voltage signal V is applied to a light-shielding film formed to cover an image pickup area except the light-receiving sensor portion; a second-conductivity-type semiconductor area is formed in the center on the surface of a first-conductivity-type semiconductor area constituting a photo-electric conversion area of the light-receiving sensor portion; and areas containing a lower impurity concentration than that of the second-conductivity-type semiconductor area is formed on the surface of the first-conductivity-type semiconductor area at the end on the side of the electrode and at the opposite end on the side of a pixel-separation area.Type: GrantFiled: November 25, 2008Date of Patent: September 13, 2011Assignee: Sony CorporationInventors: Yoshiaki Kitano, Hideshi Abe, Jun Kuroiwa, Kiyoshi Hirata, Hiroaki Ohki, Nobuhiro Karasawa, Ritsuo Takizawa, Mitsuru Yamashita, Mitsuru Sato, Katsunori Kokubun
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Patent number: 7935563Abstract: A solid-state imaging device with a structure such that an electrode for reading a signal charge is provided on one side of a light-receiving sensor portion constituting a pixel; a predetermined voltage signal V is applied to a light-shielding film formed to cover an image pickup area except the light-receiving sensor portion; a second-conductivity-type semiconductor area is formed in the center on the surface of a first-conductivity-type semiconductor area constituting a photo-electric conversion area of the light-receiving sensor portion; and areas containing a lower impurity concentration than that of the second-conductivity-type semiconductor area is formed on the surface of the first-conductivity-type semiconductor area at the end on the side of the electrode and at the opposite end on the side of a pixel-separation area.Type: GrantFiled: November 25, 2008Date of Patent: May 3, 2011Assignee: Sony CorporationInventors: Yoshiaki Kitano, Hideshi Abe, Jun Kuroiwa, Kiyoshi Hirata, Hiroaki Ohki, Nobuhiro Karasawa, Ritsuo Takizawa, Mitsuru Yamashita, Mitsuru Sato, Katsunori Kokubun
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Patent number: 7928487Abstract: A solid-state imaging device having an electrode for reading a signal charge is provided on one side of a light-receiving sensor portion constituting a pixel; a predetermined voltage signal applied to a light-shielding film formed to cover an image pickup area except the light-receiving sensor portion; a second-conductivity-type semiconductor area formed in the center on the surface of a first-conductivity-type semiconductor area constituting a photo-electric conversion area of the light-receiving sensor portion; and areas containing a lower impurity concentration than that of the second-conductivity-type semiconductor area formed on the surface of the first-conductivity-type semiconductor area at the end on the side of the electrode and at the opposite end on the side of a pixel-separation area.Type: GrantFiled: August 28, 2008Date of Patent: April 19, 2011Assignee: Sony CorporationInventors: Yoshiaki Kitano, Hideshi Abe, Jun Kuroiwa, Kiyoshi Hirata, Hiroaki Ohki, Nobuhiro Karasawa, Ritsuo Takizawa, Mitsuru Yamashita, Mitsuru Sato, Katsunori Kokubun
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Patent number: 7821093Abstract: A solid-state imaging device with a structure such that an electrode for reading a signal charge is provided on one side of a light-receiving sensor portion constituting a pixel; a predetermined voltage signal V is applied to a light-shielding film formed to cover an image pickup area except the light-receiving sensor portion; a second-conductivity-type semiconductor area is formed in the center on the surface of a first-conductivity-type semiconductor area constituting a photo-electric conversion area of the light-receiving sensor portion; and areas containing a lower impurity concentration than that of the second-conductivity-type semiconductor area is formed on the surface of the first-conductivity-type semiconductor area at the end on the side of the electrode and at the opposite end on the side of a pixel-separation area.Type: GrantFiled: November 25, 2008Date of Patent: October 26, 2010Assignee: Sony CorporationInventors: Yoshiaki Kitano, Hideshi Abe, Jun Kuroiwa, Kiyoshi Hirata, Hiroaki Ohki, Nobuhiro Karasawa, Ritsuo Takizawa, Mitsuru Yamashita, Mitsuru Sato, Katsunori Kokubun
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Patent number: 7791118Abstract: A solid-state imaging device with a structure such that an electrode for reading a signal charge is provided on one side of a light-receiving sensor portion constituting a pixel; a predetermined voltage signal V is applied to a light-shielding film formed to cover an image pickup area except the light-receiving sensor portion; a second-conductivity-type semiconductor area is formed in the center on the surface of a first-conductivity-type semiconductor area constituting a photo-electric conversion area of the light-receiving sensor portion; and areas containing a lower impurity concentration than that of the second-conductivity-type semiconductor area is formed on the surface of the first-conductivity-type semiconductor area at the end on the side of the electrode and at the opposite end on the side of a pixel-separation area.Type: GrantFiled: November 25, 2008Date of Patent: September 7, 2010Assignee: Sony CorporationInventors: Yoshiaki Kitano, Hideshi Abe, Jun Kuroiwa, Kiyoshi Hirata, Hiroaki Ohki, Nobuhiro Karasawa, Ritsuo Takizawa, Mitsuru Yamashita, Mitsuru Sato, Katsunori Kokubun
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Publication number: 20100191014Abstract: A fatty acid salt of an alkyl quaternary ammonium is used as a novel surfactant which is a cationic surfactant having high detergency and low foaming property.Type: ApplicationFiled: December 12, 2008Publication date: July 29, 2010Applicant: AISIN AW CO., LTDInventors: Toshiaki Iwase, Jun Kuroiwa, Masanori Yoshida, Katsuya Uenishi, Kouei Murayama
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Patent number: 7595214Abstract: A solid-state image pickup device includes, in a substrate, a plurality of photoelectric conversion regions for subjecting incoming light to photoelectric conversion, a reading gate for reading a signal charge from the photoelectric conversion regions, and a transfer register (vertical register) for transferring the signal charge read by the reading gate. Therein, a groove is formed on the surface side of the substrate, and the transfer register and the reading gate are formed at the bottom part of the groove. With such a structure, in the solid-state image pickup device, reduction can be achieved for the smear characteristics, a reading voltage, noise, and others.Type: GrantFiled: September 25, 2007Date of Patent: September 29, 2009Assignee: Sony CorporationInventors: Yoshiaki Kitano, Nobuhiro Karasawa, Jun Kuroiwa, Hideshi Abe, Mitsuru Sato, Hiroaki Ohki
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Publication number: 20090078977Abstract: A solid-state imaging device with a structure such that an electrode for reading a signal charge is provided on one side of a light-receiving sensor portion constituting a pixel; a predetermined voltage signal V is applied to a light-shielding film formed to cover an image pickup area except the light-receiving sensor portion; a second-conductivity-type semiconductor area is formed in the center on the surface of a first-conductivity-type semiconductor area constituting a photo-electric conversion area of the light-receiving sensor portion; and areas containing a lower impurity concentration than that of the second-conductivity-type semiconductor area is formed on the surface of the first-conductivity-type semiconductor area at the end on the side of the electrode and at the opposite end on the side of a pixel-separation area.Type: ApplicationFiled: November 25, 2008Publication date: March 26, 2009Applicant: SONY CORPORATIONInventors: Yoshiaki Kitano, Hideshi Abe, Jun Kuroiwa, Kiyoshi Hirata, Hiroaki Ohki, Nobuhiro Karasawa, Ritsuo Takizawa, Mitsuru Yamashita, Mitsuru Sato, Katsunori Kokubun
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Publication number: 20090078976Abstract: A solid-state imaging device with a structure such that an electrode for reading a signal charge is provided on one side of a light-receiving sensor portion constituting a pixel; a predetermined voltage signal V is applied to a light-shielding film formed to cover an image pickup area except the light-receiving sensor portion; a second-conductivity-type semiconductor area is formed in the center on the surface of a first-conductivity-type semiconductor area constituting a photo-electric conversion area of the light-receiving sensor portion; and areas containing a lower impurity concentration than that of the second-conductivity-type semiconductor area is formed on the surface of the first-conductivity-type semiconductor area at the end on the side of the electrode and at the opposite end on the side of a pixel-separation area.Type: ApplicationFiled: November 25, 2008Publication date: March 26, 2009Applicant: SONY CORPORATIONInventors: Yoshiaki Kitano, Hideshi Abe, Jun Kuroiwa, Kiyoshi Hirata, Hiroaki Ohki, Nobuhiro Karasawa, Ritsuo Takizawa, Mitsuru Yamashita, Mitsuru Sato, Katsunori Kokubun
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Publication number: 20090075418Abstract: A solid-state imaging device with a structure such that an electrode for reading a signal charge is provided on one side of a light-receiving sensor portion constituting a pixel; a predetermined voltage signal V is applied to a light-shielding film formed to cover an image pickup area except the light-receiving sensor portion; a second-conductivity-type semiconductor area is formed in the center on the surface of a first-conductivity-type semiconductor area constituting a photo-electric conversion area of the light-receiving sensor portion; and areas containing a lower impurity concentration than that of the second-conductivity-type semiconductor area is formed on the surface of the first-conductivity-type semiconductor area at the end on the side of the electrode and at the opposite end on the side of a pixel-separation area.Type: ApplicationFiled: November 25, 2008Publication date: March 19, 2009Applicant: SONY CORPORATIONInventors: Yoshiaki Kitano, Hideshi Abe, Jun Kuroiwa, Kiyoshi Hirata, Hiroaki Ohki, Nobuhiro Karasawa, Ritsuo Takizawa, Mitsuru Yamashita, Mitsuru Sato, Katsunori Kokubun
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Publication number: 20090072275Abstract: A solid-state imaging device with a structure such that an electrode for reading a signal charge is provided on one side of a light-receiving sensor portion constituting a pixel; a predetermined voltage signal V is applied to a light-shielding film formed to cover an image pickup area except the light-receiving sensor portion; a second-conductivity-type semiconductor area is formed in the center on the surface of a first-conductivity-type semiconductor area constituting a photo-electric conversion area of the light-receiving sensor portion; and areas containing a lower impurity concentration than that of the second-conductivity-type semiconductor area is formed on the surface of the first-conductivity-type semiconductor area at the end on the side of the electrode and at the opposite end on the side of a pixel-separation area.Type: ApplicationFiled: November 25, 2008Publication date: March 19, 2009Applicant: SONY CORPORATIONInventors: Yoshiaki Kitano, Hideshi Abe, Jun Kuroiwa, Kiyoshi Hirata, Hiroaki Ohki, Nobuhiro Karasawa, Ritsuo Takizawa, Mitsuru Yamashita, Mitsuru Sato, Katsunori Kokubun
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Publication number: 20090072336Abstract: A solid-state imaging device having an electrode for reading a signal charge is provided on one side of a light-receiving sensor portion constituting a pixel; a predetermined voltage signal applied to a light-shielding film formed to cover an image pickup area except the light-receiving sensor portion; a second-conductivity-type semiconductor area formed in the center on the surface of a first-conductivity-type semiconductor area constituting a photo-electric conversion area of the light-receiving sensor portion; and areas containing a lower impurity concentration than that of the second-conductivity-type semiconductor area formed on the surface of the first-conductivity-type semiconductor area at the end on the side of the electrode and at the opposite end on the side of a pixel-separation area.Type: ApplicationFiled: August 28, 2008Publication date: March 19, 2009Applicant: SONY CORPORATIONInventors: Yoshiaki Kitano, Hideshi Abe, Jun Kuroiwa, Kiyoshi Hirata, Hiroaki Ohki, Nobuhiro Karasawa, Ritsuo Takizawa, Mitsuru Yamashita, Mitsuru Sato, Katsunori Kokubun
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Patent number: 7473977Abstract: A solid-state imaging device that has a satisfactory noise characteristic and readout characteristic is provided by improving the noise characteristic and readout characteristic in a well balanced way.Type: GrantFiled: March 5, 2004Date of Patent: January 6, 2009Assignee: Sony CorporationInventors: Yoshiaki Kitano, Hideshi Abe, Jun Kuroiwa, Kiyoshi Hirata, Hiroaki Ohki, Nobuhiro Karasawa, Ritsuo Takizawa, Mitsuru Yamashita, Mitsuru Sato, Katsunori Kokubun
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Patent number: 7382007Abstract: A solid-state image pickup device includes, in a substrate, a plurality of photoelectric conversion regions for subjecting incoming light to photoelectric conversion, a reading gate for reading a signal charge from the photoelectric conversion regions, and a transfer register (vertical register) for transferring the signal charge read by the reading gate. Therein, a groove is formed on the surface side of the substrate, and the transfer register and the reading gate are formed at the bottom part of the groove. With such a structure, in the solid-state image pickup device, reduction can be achieved for the smear characteristics, a reading voltage, noise, and others.Type: GrantFiled: January 3, 2006Date of Patent: June 3, 2008Assignee: Sony CorporationInventors: Yoshiaki Kitano, Nobuhiro Karasawa, Jun Kuroiwa, Hideshi Abe, Mitsuru Sato, Hiroaki Ohki
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Publication number: 20080026504Abstract: A solid-state image pickup device includes, in a substrate, a plurality of photoelectric conversion regions for subjecting incoming light to photoelectric conversion, a reading gate for reading a signal charge from the photoelectric conversion regions, and a transfer register (vertical register) for transferring the signal charge read by the reading gate. Therein, a groove is formed on the surface side of the substrate, and the transfer register and the reading gate are formed at the bottom part of the groove. With such a structure, in the solid-state image pickup device, reduction can be achieved for the smear characteristics, a reading voltage, noise, and others.Type: ApplicationFiled: September 25, 2007Publication date: January 31, 2008Inventors: Yoshiaki Kitano, Nobuhiro Karasawa, Jun Kuroiwa, Hideshi Abe, Mitsuru Sato, Hiroaki Ohki
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Publication number: 20060170009Abstract: A solid-state imaging device that has a satisfactory noise characteristic and readout characteristic is provided by improving the noise characteristic and readout characteristic in a well balanced way.Type: ApplicationFiled: March 5, 2004Publication date: August 3, 2006Inventors: Yoshiaki Kitano, Hideshi Abe, Jun Kuroiwa, Kiyoshi Hirata, Hiroaki Ohki, Nobuhiro Karasawa, Ritsuo Takizawa, Mitsuru Yamashita, Mitsuru Sato, Katsunori Kokubun
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Patent number: 7084443Abstract: A solid-state image pickup device includes, in a substrate, a plurality of photoelectric conversion regions for subjecting incoming light to photoelectric conversion, a reading gate for reading a signal charge from the photoelectric conversion regions, and a transfer register (vertical register) for transferring the signal charge read by the reading gate. Therein, a groove is formed on the surface side of the substrate, and the transfer register and the reading gate are formed at the bottom part of the groove. With such a structure, in the solid-state image pickup device, reduction can be achieved for the smear characteristics, a reading voltage, noise, and others.Type: GrantFiled: April 1, 2004Date of Patent: August 1, 2006Assignee: Sony CorporationInventors: Yoshiaki Kitano, Nobuhiro Karasawa, Jun Kuroiwa, Hideshi Abe, Mitsuru Sato, Hiroaki Ohki