Abstract: A 3D semiconductor device and a system having the same are provided. The 3D semiconductor device includes a semiconductor substrate, a common source region formed on the semiconductor substrate and extending in a line shape, an active region formed on the common source region and including a lateral channel region, which is substantially in parallel to a surface of the semiconductor substrate, and source and drain regions that are branched from the lateral channel region to a direction substantially perpendicular to the surface of the semiconductor substrate, and a gate formed in a space between the source region and the drain region.

Abstract: A 3D semiconductor device and a method of manufacturing the same are provided. The 3D semiconductor device includes a semiconductor substrate, a common source region formed on the semiconductor substrate and extending in a line shape, an active region formed on the common source region and including a lateral channel region, which is substantially in parallel to a surface of the semiconductor substrate, and source and drain regions that are branched from the lateral channel region to a direction substantially perpendicular to the surface of the semiconductor substrate, and a gate formed in a space between the source region and the drain region.

Abstract: A semiconductor apparatus that includes a semiconductor substrate and a plurality of pillars formed in the semiconductor substrate. Each of the plurality of pillars includes a first pillar, and a second pillar formed on the first pillar, wherein the second pillar has a smaller linewidth than the first pillar.

Abstract: A semiconductor device includes a semiconductor substrate including a plurality of pillars, a gate electrode formed to surround a lower portion of the pillar and having a top surface lower than a top surface of the pillar, a salicide layer formed to cover the top surface of the pillar and surround an upper portion of the pillar, and an electrode formed to cover a top surface and a lateral surface of the salicide layer.

Abstract: A semiconductor device includes a semiconductor substrate including a plurality of pillars, a gate electrode formed to surround a lower portion of the pillar and having a top surface lower than a top surface of the pillar, a salicide layer formed to cover the top surface of the pillar and surround an upper portion of the pillar, and an electrode formed to cover a top surface and a lateral surface of the salicide layer.

Abstract: A 3D semiconductor device and a method of manufacturing the same are provided. The 3D semiconductor device includes a semiconductor substrate, a common source region formed on the semiconductor substrate and extending in a line shape, an active region formed on the common source region and including a lateral channel region, which is substantially in parallel to a surface of the semiconductor substrate, and source and drain regions that are branched from the lateral channel region to a direction substantially perpendicular to the surface of the semiconductor substrate, and a gate formed in a space between the source region and the drain region.

Abstract: A semiconductor device includes a plurality of first conductive lines extending in a first direction; a plurality of second conductive lines extending in a second direction crossing the first direction; and a plurality of resistance variable lines interposed between the first and the second conductive lines and extending in a third direction crossing the first and the second directions.

Abstract: Embodiments relate to a resistance variable memory device and a method for forming the same. The resistance variable memory device may include a first electrode, a second electrode spaced apart from the first electrode, a first resistance variable pattern provided over the first electrode and surrounding a lower portion of the second electrode, and a spacer surrounding a sidewall of the first resistance variable pattern. According to embodiments, the resistance variable pattern can be prevented from being damaged in an etching process and an air gap surrounding a portion of the electrode may contribute to improve reliability and an operational speed of the resistance variable memory device.

Abstract: Disclosed are a system and a method for artificial nerve networking capable of restoring a damaged nerve and allowing selective detection, analysis, transmission and stimulation of a signal from the damaged nerve. The artificial nerve networking system according to an embodiment of the present disclosure includes: a first nerve conduit connected at one end of a damaged nerve; a second nerve conduit connected at the other end of the damaged nerve; and an artificial nerve networking unit electrically connected to the first nerve conduit and the second nerve conduit and recovering the function of the damaged nerve by transmitting and receiving a signal to and from the damaged nerve.

Abstract: A mechanical diagnostic probe is used to determine the thickness of articular cartilage, so that any degeneration in the articular cartilage can be detected at an early stage. The probe advantageously allows for calibrating the speed of the ultrasound in situ thereby allowing for more accurate measurements of the tissue thickness. The probe also can be used to monitor the condition of the cartilage after surgery and/or after or during physical rehabilitation of the cartilage. The probe is comprised of a probe handle and a probe, which is comprised of an ultrasonic transducer, strain-gauges, and a linear displacement actuator. A predetermined displacement then is applied to the indenter tip and a computer program is then used to analyze the results.

Abstract: A mechanical diagnostic probe is used to determine the thickness of articular cartilage, so that any degeneration in the articular cartilage can be detected at an early stage. The probe advantageously allows for calibrating the speed of the ultrasound in situ thereby allowing for more accurate measurements of the tissue thickness. The probe also can be used to monitor the condition of the cartilage after surgery and/or after or during physical rehabilitation of the cartilage. The probe is comprised of a probe handle and a probe, which is comprised of an ultrasonic transducer, strain-gauges, and a linear displacement actuator. A predetermined displacement then is applied to the indenter tip and a computer program is then used to analyze the results.