Patents by Inventor Jun Kyu AHN

Jun Kyu AHN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SEMICONDUCTOR DEVICES HAVING A CONTROL GATE ELECTRODE INCLUDING A METAL LAYER FILLING A GAP BETWEEN ADJACENT FLOATING GATES AND METHODS OF FABRICATING THE SAME
    Publication number: 20120104482
    Abstract: A semiconductor device includes a device isolation layer defining a plurality of active regions of a semiconductor substrate, floating gates and a control gate electrode in which the lowermost part of the electrode is constituted by a metal layer. The control gate electrode crosses over the active regions. The floating gates are disposed between the control gate electrode and the active regions. The tops of the floating gates are disposed at a level above the level of the top of the device isolation layer such that a gap is defined between adjacent ones of the floating gates. A region of the gap is filled with the metal layer of the control gate electrode.
    Type: Application
    Filed: September 23, 2011
    Publication date: May 3, 2012
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Hong-Suk KIM, Jun Kyu AHN, Jae Young AHN, Ki Hyun HWANG, Yong Hyun KWON