Patents by Inventor Jun Kyu AHN

Jun Kyu AHN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250112235
    Abstract: The present invention relates to a lithium compound, a nickel-based cathode active material, a method for preparing lithium oxide, a method for preparing a nickel-based cathode active material, and a secondary battery using same. The lithium compound includes primary particles of Li2O having an average particle diameter (D50) of less than or equal to 5 ?m; and secondary particles composed of the primary particles.
    Type: Application
    Filed: December 11, 2024
    Publication date: April 3, 2025
    Applicants: POSCO CO., LTD, RESEARCH INSTITUTE OF INDUSTRIAL SCIENCE & TECHNOLOGY
    Inventors: Jae Myung Lee, Jun-Kyu Ahn, Sang Won Kim, Heok Yang
  • Publication number: 20230025008
    Abstract: The present invention relates to a novel method for preparing lithium oxide. In the present invention, the particle size and shape of lithium oxide may be controlled during the preparing process. In addition, the present invention relates to lithium oxide with controlled particle size and shape prepared by this preparing method.
    Type: Application
    Filed: December 7, 2020
    Publication date: January 26, 2023
    Applicants: POSCO, RESEARCH INSTITUTE OF INDUSTRIAL SCIENCE & TECHNOLOGY
    Inventors: Jae Myung LEE, Jun-Kyu AHN, Woo Chul JUNG, Kee Uek JEUNG, Jung Kwan PARK, Sang Won KIM
  • Publication number: 20220013773
    Abstract: The present invention relates to a lithium compound, a nickel-based cathode active material, a method for preparing lithium oxide, a method for preparing a nickel-based cathode active material, and a secondary battery using same. The lithium compound includes primary particles of Li2O having an average particle diameter (D50) of less than or equal to 5 ?m; and secondary particles composed of the primary particles.
    Type: Application
    Filed: October 11, 2019
    Publication date: January 13, 2022
    Inventors: Jae Myung Lee, Jun-Kyu Ahn, Sang Won Kim, Heok Yang
  • Publication number: 20120104482
    Abstract: A semiconductor device includes a device isolation layer defining a plurality of active regions of a semiconductor substrate, floating gates and a control gate electrode in which the lowermost part of the electrode is constituted by a metal layer. The control gate electrode crosses over the active regions. The floating gates are disposed between the control gate electrode and the active regions. The tops of the floating gates are disposed at a level above the level of the top of the device isolation layer such that a gap is defined between adjacent ones of the floating gates. A region of the gap is filled with the metal layer of the control gate electrode.
    Type: Application
    Filed: September 23, 2011
    Publication date: May 3, 2012
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Hong-Suk KIM, Jun Kyu AHN, Jae Young AHN, Ki Hyun HWANG, Yong Hyun KWON