Patent number: 10396019
Abstract: An intelligent power module (IPM) has a first, second, third and fourth die paddles, a first, second, third, fourth, fifth and sixth metal-oxide-semiconductor field-effect transistors (MOSFETs), a tie bar, a metal slug, a plurality of spacers, a plurality of leads and a molding encapsulation. The molding encapsulation encloses the first, second, third and fourth die paddles, the first, second, third, fourth, fifth and sixth MOSFETs, the tie bar and the plurality of spacers. A bottom surface of the metal slug is exposed from the molding encapsulation. A process for fabricating the IPM comprises preparing the first, second, third and fourth die paddles, the first, second, third, fourth, fifth and sixth MOSFETs, the tie bar, the plurality of leads, the metal slug and the plurality of spacers and applying a molding process to form the molding encapsulation.
Type:
Grant
Filed:
October 25, 2018
Date of Patent:
August 27, 2019
Assignee:
ALPHA AND OMEGA SEMICONDUCTOR (CAYMAN) LTD.
Inventors:
Zhiqiang Niu, Bum-Seok Suh, Wonjin Cho, Jun Lu