Abstract: A light fixture includes a light head for emitting light beams; a supporting seat for supporting rotation of the light head, the light head being pivotally connected to the supporting seat through a pivot shaft and a shaft sleeve, with the shaft sleeve mounted outside the pivot shaft; and a deformable locking assembly, including a deformable member and an operating member, wherein the operating member is configured to apply a force on the deformable member in a length direction of the pivot shaft, and deform the deformable member in a direction perpendicular to the length of the pivot shaft, with a pressing part of the deformable member pressed against the shaft sleeve or the pivot shaft, to restrict relative rotation between the shaft sleeve and the pivot shaft.

Abstract: A WLAN system resource indication method and apparatus are provided. The method includes: generating, by an access point, a frame that carries resource indication information; and sending, to multiple stations, the frame that carries the resource indication information. The resource indication information includes multiple pieces of sub resource indication information. Correspondingly, each piece of the sub resource indication information uniquely corresponds to one of the multiple stations. Therefore, a station side does not need read the entire resource indication information, so as to reduce resource overheads and improve efficiency.

Abstract: An apparatus includes a plurality of demultiplexing modules, a plurality of multiplexing modules, and a plurality of N×N switching modules. Each demultiplexing module is connected to P N×N switching modules through optical fibers. Each multiplexing module is connected to P N×N switching modules through optical fibers. Demultiplexing modules and multiplexing modules are connected to same N×N switching modules. At least one N×N switching module connected to a target demultiplexing module has a function of switching optical signals of a plurality of wavelengths for the target demultiplexing module. A quantity of wavelengths of optical signals received by each N×N switching module connected to the target demultiplexing module from the target demultiplexing module is less than a target value, and the target value is a quantity of wavelengths of optical signals received by the target demultiplexing module.

Abstract: A semiconductor device and a method for manufacturing the same. The method comprises: providing a substrate; forming a fin, a dummy gate, a first spacer, and a hard mask on a surface of the substrate; etching the substrate to form a groove located directly beneath the fin and running through a second spacer; forming, in the groove, a filling layer made of an insulating dielectric material, and thermal conductivity of the insulating dielectric material is higher than that of the substrate; removing the second spacer through etching; removing two opposite ends of each sacrificial layer to form cavities; filling the cavities to form inner spacers; forming a source and a drain on the substrate; forming a first dielectric layer; planarizing the first dielectric layer to expose the dummy gate; removing the dummy gate to release a channel comprising conductive nanosheets; forming a surrounding gate surrounding the conductive nanosheets.

Abstract: The present invention relates to the field of drilling coring devices. Disclosed are a pressure-preserved coring tool, a use method, and a reservoir analysis method. The pressure-preserved coring tool comprises an outer cylinder (1), a differential assembly (2), a pressure-preserving inner cylinder assembly (4), and a seal assembly (5). The differential assembly is configured to be able to drive the pressure-pre-serving inner cylinder assembly to move upwards relative to the seal assembly, so that the seal assembly seals the inner cylinder assembly for accommodating a rock core (8).

Abstract: Provided are a variable stiffness tube and a variable stiffness module of a continuum robot. The variable stiffness tube includes a flexible inner tube and a flexible outer tube sleeved outside the flexible inner tube, a phase change material and a flexible heat exchange apparatus are arranged between the flexible inner tube and the flexible outer tube, and the heat exchange apparatus can exchange heat with the phase change material and cause the phase change material to change from a solid phase to a liquid phase. A flexible tube is further disposed in a filling space, multiple hollow slot groups are formed in a tube wall of the flexible tube in a penetrating manner, and each hollow slot is filled with the phase change material. When the phase change material is in the liquid phase, the flexible tube can bend freely.

Abstract: A light shading system includes a rotatable support driven by a support driving mechanism to rotate, at least two pairs of shutters arranged on the rotatable support, and a shutter driving mechanism for each shutter. The shutter driving mechanism includes an angle swing arm, a translation arm pivotally connected to the angle swing arm through a first pivot point and pivotally connected to the respective shutter through a fourth pivot point, an angle connecting rod pivotally connected to the angle swing arm through a second pivot point and pivotally connected to the respective shutter through a third pivot point, where a parallelogram is defined by the first pivot point, the second pivot point, the third pivot point, and the fourth pivot point, an angle driving motor coupled to the angle swing arm, and a translation driving motor configured to rotate the translation arm or the angle connecting rod.

Abstract: Provided is a method for short-process and high-value utilization of vanadium-titanium magnetite resources, including co-enriching a raw vanadium-titanium magnetite ore to obtain an iron-vanadium-titanium co-beneficiation concentrate; mixing the iron-vanadium-titanium co-beneficiation concentrate, a solid carbonaceous reductant, a binder, and a magnesium-based modifier to obtain a mixture, and pelletizing or briquetting the mixture to prepare carbon-containing pellets; pre-reducing the carbon-containing pellets in a hydrogen-containing atmosphere to obtain pre-reduced pellets; and smelting and separating the pre-reduced pellets to obtain molten iron and a vanadium-titanium-rich slag. By co-enriching and co-smelting ilmenite and vanadium-titanium magnetite, problems such as excessive fine grinding in conventional iron/titanium separation process, a use of toxic flotation reagents, and resource waste are avoided.

Abstract: The present disclosure provides a memory with a three-dimensional vertical structure and a manufacturing method. The memory includes: a semiconductor substrate, a first isolation layer, a first transistor and a second transistor. The first transistor includes a first source layer, a second isolation layer, a first drain layer, a third isolation layer, and a first through hole penetrating to the first source layer. A first active layer, a first gate dielectric layer and a first gate layer are on an inner sidewall of the first through hole. The second transistor includes a fourth isolation layer, a second source layer, a fifth isolation layer, and a second through hole penetrating to the first gate layer. A second active layer, a second gate dielectric layer and a second gate layer are on an inner sidewall of the second through hole. The second through hole is surrounded by the first through hole.

Abstract: The present invention relates to the field of drilling coring devices. Disclosed are a pressure-preserved coring tool, a use method, and a reservoir analysis method. The pressure-preserved coring tool comprises an outer cylinder (1), a differential assembly (2), a pressure-preserving inner cylinder assembly (4), and a seal assembly (5). The differential assembly is configured to be able to drive the pressure-pre-serving inner cylinder assembly to move upwards relative to the seal assembly, so that the seal assembly seals the inner cylinder assembly for accommodating a rock core (8).

Abstract: A foldable handle includes a base bar, a steering lever pivoted to the base bar, and a movable retaining element. The steering lever has two states relative to the base bar, including a folding state where the steering lever is substantially perpendicular to the base bar and an unfolding state where the steering lever is substantially in the same line with the base bar. The steering lever is configured in a way that in the unfolding state a first side of the steering lever is blocked by a side plate protruded from an end of the base bar to restrict the steering lever to rotate forward. The retaining element is configured to move to be abutted against a second side of the steering lever opposite to the first side blocked by the side plate to restrict the steering lever to rotate backward in the unfolding state of the steering lever.

Abstract: A battery cell includes C cathode electrodes including a cathode active material layer arranged on one or both sides of a cathode current collector, A anode electrodes, and S separators arranged between adjacent ones of the C cathode electrodes and the A anode electrodes, where C, S and A are integers greater than one. Each of the A anode electrodes includes an anode current collector, a lithium silicide layer arranged on the anode current collector, and an artificial solid electrolyte interface arranged in first regions on one side of the lithium silicide layer and not in second regions on the one side of the lithium silicide layer. The artificial solid electrolyte interface includes one or more materials selected from a group consisting of lithium carbonate (Li2CO3), lithium nitride (Li3N), lithium oxide (Li2O), lithium phosphide (Li3P), lithium phosphate (Li3PO4), and combinations thereof.

Abstract: A metal interconnection structure of a semiconductor device and a method for forming the same. The method includes: providing a substrate; forming a first dielectric layer on the substrate; forming a first conductive structure in the first dielectric layer; etching back part of the first conductive structure; forming an etch stop layer on the first conductive structure; forming a second dielectric layer on the etch stop layer and performing chemical mechanical polishing; and forming a second conductive structure in the second dielectric layer, where the second conductive structure is electrically connected to the first conductive structure.

Abstract: A locking structure for a camera module and a camera module. The locking structure comprises: a coil unit; and a magnetic unit, the magnetic unit being disposed opposite to the coil unit. When the coil unit is energized, the direction of the magnetic field generated by the coil unit interacts with the direction of the magnetic field of the magnetic unit so as to drive the relative movement of the coil unit and the magnetic unit. The locking structure having such a structure has a simple structure and is easy to assemble. Moreover, the performance of the locking structure can be independently tested and maintained, thereby ensuing that the locking structure has a high yield rate.

Abstract: The present invention relates to the field of cancer. More specifically, the present invention provides compositions and methods useful for treating patients having a HOXB13 genetic variant. In a specific embodiment, a method for identifying a subject as having an increased risk of prostate cancer (PCa) comprises the step of detecting single nucleotide polymorphism rs77179853 in DNA isolated from the subject, wherein the presence of the rs77179853 SNP identifies the subject as having an increased risk of aggressive prostate cancer.

Abstract: The present disclosure relates to a field of semiconductor technology, in particular to a semiconductor device and a method of manufacturing a semiconductor device. The semiconductor device includes a substrate, a nanosheet channel, a metal gate, a source/drain region, and an insulating dielectric layer. The nanosheet channel is located above the substrate. The metal gate surrounds the nanosheet channel. The source/drain region is connected to the nanosheet channel. The insulating dielectric layer is located between the substrate and the source/drain region, and between the substrate and the nanosheet channel. The method includes forming a trench penetrating a source/drain by etching of silicon in the source/drain region, and filling the trench with an insulating dielectric material, so as to form a complete isolation between a bottom of a channel and a bottom of the source/drain.

Abstract: The present disclosure relates to a ferroelectric gate stack, a ferroelectric field effect transistor, and a method of manufacturing a ferroelectric gate stack, which pertain to the field of microelectronic technology. The ferroelectric gate stack includes a gate oxygen layer, a thin dielectric layer, and a further gate dielectric layer sequentially stacked from bottom to top; a ferroelectric layer is further provided between the thin dielectric layer and the gate oxygen layer, and a resistive switching layer is further provided between the thin dielectric layer and the further gate dielectric layer; or a resistive switching layer is further provided between the thin dielectric layer and the gate oxygen layer, and a ferroelectric layer is further provided between the thin dielectric layer and the further gate dielectric layer.

Abstract: The present disclosure relates to a vertical channel SRAM cell, a method of manufacturing the same, a memory, and an electronic device, which pertain to a field of semiconductor technology. The vertical channel SRAM cell includes: a pull-up transistor device layer; an intermediate spacer layer on the pull-up transistor device layer; and a pull-down transistor device layer separated from the pull-up transistor device layer by the intermediate spacer layer, where the pull-down transistor device layer includes a pull-down transistor and a pass gate transistor; where the pass gate transistor is connected with the pull-down transistor by an upper source layer at identical height; the first pull-up transistor and the first pull-down transistor form a first inverter, the second pull-up transistor and the second pull-down transistor form a second inverter, and the first inverter and the second inverter are coupled to each other through a metal gate strip.

Abstract: An optical image stabilization apparatus and a camera module are provided. The optical image stabilization apparatus includes: a shape memory alloy driving component, a fixed component, and a movable component. The shape memory alloy driving component is disposed between the fixed component and the movable component to drive the movable component to move relative to the fixed component. The shape memory alloy driving component is connected with the fixed component and/or the movable component by means of through a metal spacer, and the metal spacer is detabably connected with the fixed component and/or with the movable component.