Abstract: The present invention provides a pharmaceutical composition comprising an antibody which binds specifically to human TLR7 or monkey TLR7 and does not bind to mouse TLR7 or rat TLR7, and has an activity of inhibiting a function of human TLR7 or monkey TLR7, and the like.

Abstract: In a rotation transmission mechanism that transmits the rotational driving force of a motor to a load-side member via a speed reducer, a strain wave gearing is used as the speed reducer, and the allowable load torque of members in the powertrain other than the strain wave gearing is greater than a predetermined upper-limit load torque. The allowable load torque of the strain wave gearing is dictated by the ratcheting torque, which is set so as not to exceed the upper-limit load torque. In an overload state, ratcheting is generated in the strain wave gearing, so that the strain wave gearing functions as a mechanical fuse. Other power transmission members can be protected from an overload state without adding a separate member such as a torque limiter.

Abstract: In a rotation transmission mechanism that transmits the rotational driving force of a motor to a load-side member via a speed reducer, a strain wave gearing is used as the speed reducer, and the allowable load torque of members in the powertrain other than the strain wave gearing is greater than a predetermined upper-limit load torque. The allowable load torque of the strain wave gearing is dictated by the ratcheting torque, which is set so as not to exceed the upper-limit load torque. In an overload state, ratcheting is generated in the strain wave gearing, so that the strain wave gearing functions as a mechanical fuse. Other power transmission members can be protected from an overload state without adding a separate member such as a torque limiter.

Abstract: A wave generator for a strain wave gearing makes a flexible externally toothed gear to flex into an elliptical shape and mesh with rigid internally toothed gears, and makes meshing positions of the flexible externally toothed gear with the both gears to move in a circumferential direction. On the inner side of a rigid plug of the wave generator, a plug support ring is secured and integrated. The rigid plug is formed from an iron-based material, and the plug support ring is formed from a high-rigidity material that is more rigid than the iron-based material. Since deformation of the rigid plug is suppressed, the wave generator provided with a large hollow part can be obtained.

Abstract: An object of the invention is to provide a yellow ink composition for nonaqueous inkjet that achieves excellent density and weather resistance on printed matters whose printing surface is constituted by a polyvinyl chloride polymer, ethylene-vinyl acetate copolymer, or other vinyl polymer or the like, while also ensuring excellent discharge stability, even in a high-speed printing mode. To this end, a yellow ink composition for nonaqueous inkjet is provided that contains, as the pigment, C. I. Pigment Yellow 150 and C. I. Pigment Yellow 83 at a ratio by mass, calculated by “C. I. Pigment Yellow 150/C. I. Pigment Yellow 83,” of 5/5 to 9/1, and further contains a pigment dispersant, a resin, and an organic solvent.

Abstract: An object of an embodiment of the present invention is to manufacture a semiconductor device with high display quality and high reliability, which includes a pixel portion and a driver circuit portion capable of high-speed operation over one substrate, using transistors having favorable electric characteristics and high reliability as switching elements. Two kinds of transistors, in each of which an oxide semiconductor layer including a crystalline region on one surface side is used as an active layer, are formed in a driver circuit portion and a pixel portion. Electric characteristics of the transistors can be selected by choosing the position of the gate electrode layer which determines the position of the channel. Thus, a semiconductor device including a driver circuit portion capable of high-speed operation and a pixel portion over one substrate can be manufactured.

Abstract: Provided are a steel-shape measurement device and a steel-shape correction device. The steel-shape measurement device measures a distance to a detection spot group on a to-be-scanned surface of a steel product with a laser rangefinder 5A that measures the distance through scanning of a steel product S with a laser beam emitted from one laser light source 11 and redirected with a galvanometer mirror 13, and measures a shape of the steel product from obtained measured-distance data. The steel-shape measurement device includes an object having a 45°-0° diffuse reflectance of equal to or lower than 10% as a laser-beam absorber 8 at least one portion within an irradiation range irradiated with a regular-reflected laser beam from a to-be-scanned surface of the steel product.

Abstract: A semiconductor device including a capacitor whose charge capacity is increased while improving the aperture ratio is provided. Further, a semiconductor device which consumes less power is provided. A transistor which includes a light-transmitting semiconductor film, a capacitor in which a dielectric film is provided between a pair of electrodes, an insulating film which is provided over the light-transmitting semiconductor film, and a first light-transmitting conductive film which is provided over the insulating film are included. The capacitor includes the first light-transmitting conductive film which serves as one electrode, the insulating film which functions as a dielectric, and a second light-transmitting conductive film which faces the first light-transmitting conductive film with the insulating film positioned therebetween and functions as the other electrode.

Abstract: An object is to reduce leakage current and parasitic capacitance of a transistor used for an LSI, a CPU, or a memory. A semiconductor integrated circuit such as an LSI, a CPU, or a memory is manufactured using a thin film transistor in which a channel formation region is formed using an oxide semiconductor which becomes an intrinsic or substantially intrinsic semiconductor by removing impurities which serve as electron donors (donors) from the oxide semiconductor and has larger energy gap than that of a silicon semiconductor. With use of a thin film transistor using a highly purified oxide semiconductor layer with sufficiently reduced hydrogen concentration, a semiconductor device with low power consumption due to leakage current can be realized.

Abstract: An object is to provide a non-aqueous inkjet ink composition which offers excellent fine print reproducibility, solid fill property, and anti-mottling property on printed matters, even when it is printed, at high speed, on materials whose printing surface is constituted by a polyvinyl chloride polymer, ethylene-vinyl acetate copolymer, or other vinyl polymer, etc., and which also offers excellent rub resistance, solvent resistance, discharge stability, and resolubility of dried coating film, and has a high flash point. To achieve the object, a non-aqueous inkjet ink composition is provided which contains an acrylic resin, a ketone resin, a pigment, and a pigment dispersant, as well as propylene carbonate and diethylene glycol alkyl ether as an organic solvent.

Abstract: Objects are to provide a display device the power consumption of which is reduced, to provide a self-luminous display device the power consumption of which is reduced and which is capable of long-term use in a dark place. A circuit is formed using a thin film transistor in which a highly-purified oxide semiconductor is used and a pixel can keep a certain state (a state in which a video signal has been written). As a result, even in the case of displaying a still image, stable operation is easily performed. In addition, an operation interval of a driver circuit can be extended, which results in a reduction in power consumption of a display device. Moreover, a light-storing material is used in a pixel portion of a self-luminous display device to store light, whereby the display device can be used in a dark place for a long time.

Abstract: An oxide semiconductor layer which is intrinsic or substantially intrinsic and includes a crystalline region in a surface portion of the oxide semiconductor layer is used for the transistors. An intrinsic or substantially intrinsic semiconductor from which an impurity which is to be an electron donor (donor) is removed from an oxide semiconductor and which has a larger energy gap than a silicon semiconductor is used. Electrical characteristics of the transistors can be controlled by controlling the potential of a pair of conductive films which are provided on opposite sides from each other with respect to the oxide semiconductor layer, each with an insulating film arranged therebetween, so that the position of a channel formed in the oxide semiconductor layer is determined.

Abstract: A steering control device includes a command value setting processing portion configured to set a current command value based on a detection value of steering torque; a feedback processing portion configured to control a voltage applied to a motor so as to control a current flowing through the motor to the current command value, based on an output value of an integral element obtained by using a difference between the current and the current command value; an end determination processing portion configured to determine whether a turning angle of steered wheels has reached a limit angle; and an end-time limit processing portion configured to perform correction to increase a magnitude of the difference, based on a degree of a decrease in a magnitude of a rotational speed of the motor when the end determination processing portion determines that the turning angle has reached the limit angle.

Abstract: A semiconductor device including a capacitor whose charge capacity is increased while improving the aperture ratio is provided. Further, a semiconductor device which consumes less power is provided. A transistor which includes a light-transmitting semiconductor film, a capacitor in which a dielectric film is provided between a pair of electrodes, an insulating film which is provided over the light-transmitting semiconductor film, and a first light-transmitting conductive film which is provided over the insulating film are included. The capacitor includes the first light-transmitting conductive film which serves as one electrode, the insulating film which functions as a dielectric, and a second light-transmitting conductive film which faces the first light-transmitting conductive film with the insulating film positioned therebetween and functions as the other electrode.

Abstract: A non-aqueous magenta ink composition for ink jet printing comprising a pigment, a pigment dispersant, a binder resin and an organic solvent, wherein the pigment comprises C.I. Pigment Red 254 and a red pigment having a quinacridone skeleton, and wherein a total amount of the C.I. Pigment Red 254 and the red pigment having a quinacridone skeleton is not less than 50% by mass in the pigment.

Abstract: An object of an embodiment of the present invention is to manufacture a semiconductor device with high display quality and high reliability, which includes a pixel portion and a driver circuit portion capable of high-speed operation over one substrate, using transistors having favorable electric characteristics and high reliability as switching elements. Two kinds of transistors, in each of which an oxide semiconductor layer including a crystalline region on one surface side is used as an active layer, are formed in a driver circuit portion and a pixel portion. Electric characteristics of the transistors can be selected by choosing the position of the gate electrode layer which determines the position of the channel. Thus, a semiconductor device including a driver circuit portion capable of high-speed operation and a pixel portion over one substrate can be manufactured.

Abstract: Objects are to provide a display device the power consumption of which is reduced, to provide a self-luminous display device the power consumption of which is reduced and which is capable of long-term use in a dark place. A circuit is formed using a thin film transistor in which a highly-purified oxide semiconductor is used and a pixel can keep a certain state (a state in which a video signal has been written). As a result, even in the case of displaying a still image, stable operation is easily performed. In addition, an operation interval of a driver circuit can be extended, which results in a reduction in power consumption of a display device. Moreover, a light-storing material is used in a pixel portion of a self-luminous display device to store light, whereby the display device can be used in a dark place for a long time.

Abstract: A wave generator of a flat-type strain wave gearing has an insertion member disposed between two wave bearings. The insertion member is pressed into an elliptical outer peripheral surface of a plug and is fixed thereto by an adhesive. An inner ring contact part of the insertion member is in contact with inner rings of the wave bearings from the direction of a center axis. When the flat-type strain wave gearing is in an operating state, the wave bearings can be prevented from moving relative to the plug in the direction of the center axis by means of thrust force acting on the wave bearings.

Abstract: An oxide semiconductor layer which is intrinsic or substantially intrinsic and includes a crystalline region in a surface portion of the oxide semiconductor layer is used for the transistors. An intrinsic or substantially intrinsic semiconductor from which an impurity which is to be an electron donor (donor) is removed from an oxide semiconductor and which has a larger energy gap than a silicon semiconductor is used. Electrical characteristics of the transistors can be controlled by controlling the potential of a pair of conductive films which are provided on opposite sides from each other with respect to the oxide semiconductor layer, each with an insulating film arranged therebetween, so that the position of a channel formed in the oxide semiconductor layer is determined.

Abstract: Provided are a steel-shape measurement device and a steel-shape correction device. The steel-shape measurement device measures a distance to a detection spot group on a to-be-scanned surface of a steel product with a laser rangefinder 5A that measures the distance through scanning of a steel product S with a laser beam emitted from one laser light source 11 and redirected with a galvanometer mirror 13, and measures a shape of the steel product from obtained measured-distance data. The steel-shape measurement device includes an object having a 45°-0° diffuse reflectance of equal to or lower than 10% as a laser-beam absorber 8 at least one portion within an irradiation range irradiated with a regular-reflected laser beam from a to-be-scanned surface of the steel product.