Patents by Inventor Jun Mizoe

Jun Mizoe has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Hydrogen fluoride vapor phase selective etching method for fabricating semiconductor devices
    Patent number: 5922623
    Abstract: Disclosed is a method selective of vapor phase etching for fabricating a semiconductor device having a refractory metal silicide electrode abutting a silicon oxide film on the surface or a semiconductor device having an AlGaAs layer, an electrode formed on the AlGaAs layer and a silicon oxide film on the surface of the semiconductor device. The method comprises a step of removing a portion of the silicon oxide film by a gas including a vapor of hydrogen fluoride. The method further uses a mixture of nitrogen gas including vapor of anhydrous hydrofluoric acid and a nitrogen gas including a vapor of H.sub.2 O, wherein the ratio of the nitrogen gas including the vaporized anhydrous hydrofluoric acid to the nitrogen gas including vapor of H.sub.2 O is less than 1.
    Type: Grant
    Filed: May 8, 1996
    Date of Patent: July 13, 1999
    Assignee: NEC Corporation
    Inventors: Hiroaki Tsutsui, Takao Matsumura, Hirokazu Oikawa, Masayuki Yokoi, Junichi Nakamura, Hiroyuki Sato, Jun Mizoe