Abstract: Disclosed is a method for constructing a virtual backbone in a Wireless Sensor Network (WSN). The method including the steps of setting a ‘Dominator’ status for a gateway or a sink node within the WSN, setting a ‘CoveredByDominator’ status for each neighbor node positioned in the transmission range of a node for which the ‘Dominator’ status is set, and setting a ‘NULL’ status for each of the other nodes, transmitting a beacon frame by periods from each node to neighbor nodes thereof within the WSN, receiving, by each node in the ‘CoveredByDominator’ status, the beacon frame from neighbor nodes thereof in the ‘NULL’ status, computing a time duration of a defer timer, and enabling the defer timer to operate by the computed time duration; and changing, to the ‘Dominator’ status, a status of a node whose defer timer expires earliest among the nodes all having the ‘CoveredByDominator’ status.

Abstract: According to one embodiment, a method for remotely controlling peripheral devices in a mobile communication terminal includes acquiring a profile for a controlled peripheral device, configuring a control application for the controlled peripheral device based on the acquired profile, and controlling the controlled peripheral device using the configured control application.

Abstract: The present invention relates to a semiconductor device with an epitaxially grown titanium silicide layer having a phase of C49 and a method for fabricating the same. This titanium silicide layer has a predetermined interfacial energy that does not transform the phase of the titanium layer, and thus, occurrences of agglomeration of the titanium layer and a grooving phenomenon can be prevented. The semiconductor device includes: a silicon layer; an insulation layer formed on the silicon layer, wherein a partial portion of the insulation layer is opened to form a contact hole exposing a partial portion of the silicon layer; an epitaxially grown titanium silicide layer having a phase of C49 and formed on the exposed silicon substrate disposed within the contact hole; and a metal layer formed on an upper surface of the titanium silicide layer.

Abstract: Disclosed is a packet routing method in an ad-hoc network. The method includes periodically calculating a link stability with respect to each neighbor node by means of the number of beacon frames lost within an update period for each neighbor node, updating the calculated link stability in the neighbor node table; identifying a neighbor node which is closer to a destination node of a received packet than the node when the node itself does not correspond to the destination node; and transmitting the received packet to the identified neighbor node when the identified link stability of the neighbor node is greater than or equal to a threshold value.

Abstract: A wireless sensor network and a method for configuration thereof are includes a plurality of sensor nodes and a sink node. The network configuration method includes collecting location information about the sensor nodes by the sink node, setting the sensor nodes, which have sensing regions include a transmitting region of the sink node, to an active node based on the location information, and configuring a network composed of the active nodes. Dead nodes are detected by the sink node, and inactive nodes are activated to reconfigure the network as needed due to the detected dead nodes.

Abstract: The present invention relates to a semiconductor device with an epitaxially grown titanium silicide layer having a phase of C49 and a method for fabricating the same. This titanium silicide layer has a predetermined interfacial energy that does not transform the phase of the titanium layer, and thus, occurrences of agglomeration of the titanium layer and a grooving phenomenon can be prevented. The semiconductor device includes: a silicon layer; an insulation layer formed on the silicon layer, wherein a partial portion of the insulation layer is opened to form a contact hole exposing a partial portion of the silicon layer; an epitaxially grown titanium silicide layer having a phase of C49 and formed on the exposed silicon substrate disposed within the contact hole; and a metal layer formed on an upper surface of the titanium silicide layer.

Abstract: The present invention relates to a semiconductor device with an epitaxially grown titanium silicide layer having a phase of C49 and a method for fabricating the same. This titanium silicide layer has a predetermined interfacial energy that does not transform the phase of the titanium layer, and thus, occurrences of agglomeration of the titanium layer and a grooving phenomenon can be prevented. The semiconductor device includes: a silicon layer; an insulation layer formed on the silicon layer, wherein a partial portion of the insulation layer is opened to form a contact hole exposing a partial portion of the silicon layer; an epitaxially grown titanium silicide layer having a phase of C49 and formed on the exposed silicon substrate disposed within the contact hole; and a metal layer formed on an upper surface of the titanium silicide layer.

Abstract: Disclosed is a method for constructing a virtual backbone in a Wireless Sensor Network (WSN). The method including the steps of setting a ‘Dominator’ status for a gateway or a sink node within the WSN, setting a ‘CoveredByDominator’ status for each neighbor node positioned in the transmission range of a node for which the ‘Dominator’ status is set, and setting a ‘NULL’ status for each of the other nodes, transmitting a beacon frame by periods from each node to neighbor nodes thereof within the WSN, receiving, by each node in the ‘CoveredByDominator’ status, the beacon frame from neighbor nodes thereof in the ‘NULL’ status, computing a time duration of a defer timer, and enabling the defer timer to operate by the computed time duration; and changing, to the ‘Dominator’ status, a status of a node whose defer timer expires earliest among the nodes all having the ‘CoveredByDominator’ status.

Abstract: The present invention relates to a semiconductor device with an epitaxially grown titanium silicide layer having a phase of C49 and a method for fabricating the same. This titanium silicide layer has a predetermined interfacial energy that does not transform the phase of the titanium layer, and thus, occurrences of agglomeration of the titanium layer and a grooving phenomenon can be prevented. The semiconductor device includes: a silicon layer; an insulation layer formed on the silicon layer, wherein a partial portion of the insulation layer is opened to form a contact hole exposing a partial portion of the silicon layer; an epitaxially grown titanium silicide layer having a phase of C49 and formed on the exposed silicon substrate disposed within the contact hole; and a metal layer formed on an upper surface of the titanium silicide layer.

Abstract: A semiconductor device with an epitaxially grown titanium silicide layer having a phase of C49 and a method for fabricating the same. The titanium silicide layer has a predetermined interfacial energy that does not transform the phase of the titanium layer, and thus, occurrences of agglomeration of the titanium layer and a grooving phenomenon can be prevented. The semiconductor device includes: a silicon layer; an insulation layer formed on the silicon layer, wherein a partial portion of the insulation layer is opened to form a contact hole exposing a partial portion of the silicon layer. An epitaxially grown titanium silicide layer having a phase of C49 and is formed on the exposed silicon substrate disposed within the contact hole; and a metal layer is formed on an upper surface of the titanium silicide layer.

Abstract: A semiconductor device with an epitaxially grown titanium silicide layer having a phase of C49 and a method for fabricating the same. The titanium silicide layer has a predetermined interfacial energy that does not transform the phase of the titanium layer, and thus, occurrences of agglomeration of the titanium layer and a grooving phenomenon can be prevented. The semiconductor device includes: a silicon layer; an insulation layer formed on the silicon layer, wherein a partial portion of the insulation layer is opened to form a contact hole exposing a partial portion of the silicon layer. An epitaxially grown titanium silicide layer having a phase of C49 and is formed on the exposed silicon substrate disposed within the contact hole; and a metal layer is formed on an upper surface of the titanium silicide layer.

Abstract: The present invention relates to a data vending machine system and a method thereof, and in particular to a data vending machine system and a method thereof which are capable of selecting a certain music file, recording the selected music file onto a recording medium and printing a selected image and character message on a surface of the recording medium. The present invention includes a host computer for storing a digital music file and a plurality of remote data vending machine connected with the host computer. The data vending machine includes at least one listing and reserving apparatus for providing a reservation function of the music files selected by the customer, a database and fabrication control apparatus for storing a part of the music files stored in the host computer and recording the selected music file onto the recording medium, and a charge paying unit.

Abstract: A mixed green-emitting phosphor manufactured by mixing about 20 to 60 weight percent of Y3(Al,Ga)5O12:Tb phosphor, less than about 30 weight percent of LaOCl:Tb phosphor, less than about 60 weight percent of Y2SiO5:Tb phosphor, and less than about 20 weight percent of Zn2SiO4:Mn phosphor and a cathode ray tube employing it are disclosed. The luminance characteristic is excellent under a high current density.

Abstract: A mixed green-emitting phosphorus manufactured by mixing InBO.sub.3 :Tb and one selected from ZnS:Cu,Au,Al and ZnS:Cu,Al, optionally with Zn.sub.2 SiO.sub.4 :Mn. A cathode ray tube adopting the mixed green-emitting phosphor not only has good luminance and color purity, but also enhanced afterglow and luminosity characteristics.

Abstract: A green emitting phosphor for use in a color cathode ray tube and a cathode ray tube using the said green emitting phosphor are disclosed. The green emitting phosphor according to the present invention satisfies the following general formula:[ZnS:CuAuAlM](where M indicates at least one element of Ce, Tb, Eu, Sc and La.), i.e., the green emitting phosphor according to the present invention is prepared by adding a trace of one of the above mentioned rare earth elements to the conventional [ZnS:CuAuAl] green emitting phosphor. The green emitting phosphor thus prepared according to the present invention is highly luminescent and thermally stabilized, as well as improving the work efficiency.