Abstract: A complementary metal-oxide semiconductor (CMOS) image sensor and a method for fabricating the same are disclosed. The CMOS image sensor a plurality of photosensitive devices formed on a semiconductor substrate, an interlayer dielectric formed on the photosensitive devices, and a plurality of color filter layers facing into each interlayer dielectric and filtering light for each wavelength, a planarization layer formed on each of the color filter layers, and a micro-lens layer formed on the planarization layer and having a refractive index distribution, in which light is focused to the photosensitive device facing thereto, based on an ion injection profile.

Abstract: Provided an optical system having a multiple curvature lens and a method for manufacturing the same. The optical system includes an image-forming lens group, an image sensor, and an image processing unit. The image-forming lens group has one or more multiple curvature lenses each having a multiple curvature surface provided on at least one refractive surface on one side of the multiple curvature lens. The multiple curvature surface includes two or more curved surfaces of different curvatures formed in a concentric circle. The image-forming lens group also has one or more single curvature lenses arranged before or after the multiple curvature lens and having a refractive surface. The refractive surface includes a continuous curved surface of a single curvature radius formed on both sides of the single curvature lens. The image sensor senses an image formed by the image-forming lens group, and the image processing unit recovers the image sensed by the image sensor.

Abstract: Provided are an optical system for processing an image using a PSF and an image processing method thereof. The optical system includes one or more lenses, an image sensor, and an image processor. The image sensor senses an image formed by the lenses, and the image processor recovers the image sensed by the image sensor using a PSF. A BFL defined as a distance between a refractive surface of one of the lenses that is closest to an image-side and the image sensor, is controlled such that ?PSF defined by Equation below has a value less than 100%. ? ? ? ? PSF ? ( % ) = PSF ? - PSF macro ( PSF ? + PSF macro ) / 2 × 100 An image is recovered using a PSF, so that an excellent image can be obtained over a wide object distance range.

Abstract: A complementary metal-oxide semiconductor (CMOS) image sensor and a method for fabricating the same are disclosed. The CMOS image sensor a plurality of photosensitive devices formed on a semiconductor substrate, an interlayer dielectric formed on the photosensitive devices, and a plurality of color filter layers facing into each interlayer dielectric and filtering light for each wavelength, a planarization layer formed on each of the color filter layers, and a micro-lens layer formed on the planarization layer and having a refractive index distribution, in which light is focused to the photosensitive device facing thereto, based on an ion injection profile.