Patents by Inventor Jun Muramoto

Jun Muramoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10562564
    Abstract: A work vehicle is articulated with a front frame and a rear frame linked to the front frame. The work vehicle includes a hydraulic actuator, a control valve, an operation member and a force imparting component. The hydraulic actuator is configured to be hydraulically driven to change a steering angle of the front frame with respect to the rear frame. The control valve is configured to control flow of fluid supplied to the hydraulic actuator. The operation member is linked to the control valve and configured to be operated by an operator. The force imparting component is configured to impart an assist force or a counterforce to an operation of the operation member.
    Type: Grant
    Filed: October 26, 2016
    Date of Patent: February 18, 2020
    Assignee: KOMATSU LTD.
    Inventors: Masanori Ikari, Masanobu Nakabayashi, Yuita Takenaka, Masahiko Hamaguchi, Jun Itou, Kenichi Muramoto
  • Patent number: 10412908
    Abstract: A hydroponic system (1) is provided with a light-collecting apparatus (3) having a pair of reflecting plates (31a) that are vertically arranged in parallel with a culture surface (23) of a culture panel (21) of a hydroponic unit (2). During a process in which natural light taken from a light-collecting opening (30) propagates while repeatedly reflected by opposing reflecting surfaces of a reflecting plates (31a), by allowing seedlings p that are transplanted into the culture panel (21) to be irradiated with the light through a light-emitting hole (32) bored in the reflecting plate (31a), a culture object can be grown efficiently at a low cost by taking natural light from the outside.
    Type: Grant
    Filed: September 29, 2015
    Date of Patent: September 17, 2019
    Assignee: TOYO SEIKAN GROUP HOLDINGS, LTD.
    Inventors: Jun Agari, Katsuhiro Muramoto, Kunio Murai, Takahiro Kamiya, Shinichirou Matsumoto, Kazuto Yoshimura, Akihiko Fujiwara, Shinji Kubo, Mari Nishi, Akane Itoh
  • Patent number: 10392777
    Abstract: An operator's compartment is located above a climbing device and has a door. A sensing unit recognizes an operator. A door driving unit automatically opens the door in response the sensing unit sensing the operator.
    Type: Grant
    Filed: July 22, 2016
    Date of Patent: August 27, 2019
    Assignee: KOMATSU LTD.
    Inventors: Masahiko Hamaguchi, Kenichi Muramoto, Yuuki Shimasaki, Masataka Setoguchi, Jun Ito
  • Patent number: 10370821
    Abstract: A work vehicle includes a console box disposed to a side of an operator's seat, and a support including a rotational axis disposed in a left and right direction below the console box. The console box is configured to be rotatable in a forth and back direction. The support rotatably supports the console box around the rotational axis and between an operating position in which the console box is horizontally disposed and a retracted position in which the console box is inclined at a position in which the console box has been rotated rearward from the operating position. A spacing in a horizontal direction between front and rear ends of the console box disposed in the retracted position is less than a spacing in the horizontal direction between front and rear ends of the console box disposed in the operating position.
    Type: Grant
    Filed: October 30, 2015
    Date of Patent: August 6, 2019
    Assignee: KOMATSU LTD.
    Inventors: Kenichi Muramoto, Yasunari Kato, Yuuki Shimasaki, Jun Itou, Masahiko Hamaguchi
  • Publication number: 20190183076
    Abstract: [Object] To provide a hydroponic cultivation system that is capable of transporting a seedbed with a simple mechanism and has excellent durability. [Solving Means] A hydroponic cultivation system includes a plurality of seedbeds, a hanging part, and a transport mechanism. A plurality of seedlings of a plant to be cultivated are transplanted to side surfaces of the plurality of seedbeds. The hanging part hangs each of the plurality of seedbeds while the plurality of seedbeds are arranged in a predetermined horizontal direction from a planting side of the seedlings to a harvesting side of the seedlings. The transport mechanism transports the plurality of seedbeds in the predetermined horizontal direction while widening spaces between the seedbeds in the predetermined horizontal direction in a stepwise or continuous manner.
    Type: Application
    Filed: May 1, 2017
    Publication date: June 20, 2019
    Inventors: KATSUHIRO MURAMOTO, JUN AGARI, MARI NISHI, KAZUTO YOSHIMURA, KAZUYOSHI NAGATA
  • Patent number: 5825062
    Abstract: Pulse shaped voltage of 5V is applied to a source region 3 at initial phase of erase by a pull back voltage generator 13 connected to the sources region 3. Then, the pulse shaped voltages of 10V and 12V increased under stepwise bases are applied to source region 3 with progress of erasion. Generation of hot-holes at the initial phase of data erasion can be prevented because difference in voltage between the floating gate electrode 5 and source region 3 is decreased. Value of the pulse shaped voltage thus applied is increased for the difference occurred between the floating gate electrode 5 and source region 3 when erasion is in much progress. Thus, it is possible to pull out the stored electrons from the floating gate electrode 5 until the threshold voltages can be set at predetermined values. So that, degradation of characteristics of a gate oxidation layer caused by hot-holes generated with erasion can be prevented.
    Type: Grant
    Filed: December 10, 1996
    Date of Patent: October 20, 1998
    Assignee: Rohm Co., Ltd.
    Inventor: Jun Muramoto
  • Patent number: 5633821
    Abstract: A nonvolatile memory with a simple structure where recorded information can be read without destruction. A voltage is impressed between a control gate and a memory gate for writing. A ferroelectric layer is polarized in accordance with the direction of the impressed voltage. A control gate voltage to make channel is small when the ferroelectric layer is polarized with the control gate side being positive. Control gate voltage to make channel is large when the ferroelectric layer is polarized with the control gate side being negative. The reference voltage is impressed on the control gate for reading. A large drain current flows when the ferroelectric layer is polarized with a second polarization and a small drain current flows when the ferroelectric layer is polarized with a first polarization. Record information can be read by detecting the drain current. Polarization status of the ferroelectric is not destroyed in the reading operation.
    Type: Grant
    Filed: January 18, 1995
    Date of Patent: May 27, 1997
    Assignee: Rohm Co., Ltd.
    Inventors: Kiyoshi Nishimura, Hideki Hayashi, Jun Muramoto, Takaaki Fuchikami, Hiromi Uenoyama
  • Patent number: 5592409
    Abstract: Nonvolatile memory with a simple structure where recorded information can be read without destruction: Voltage is impressed between control gate CG and memory gate MG at a writing operation. A ferroelectric layer 32 is polarized in accordance with the direction of the impressed voltage. The control gate voltage V.sub.CG to make a channel is low when the ferroelectric layer 32 is polarized with the control gate side being positive (polarized with second status). The control gate voltage V.sub.CG to make a channel is high when the ferroelectric layer 32 is polarized with the control gate side being negative (polarized with the first status). The reference voltage V.sub.ref is impressed to the control gate CG at the reading operation. A high drain current flows when the ferroelectric layer is polarized with the second status and low drain current flows when the ferroelectric layer is polarized with the first status. Recorded information can be read by detecting the drain current.
    Type: Grant
    Filed: January 18, 1995
    Date of Patent: January 7, 1997
    Assignee: Rohm Co., Ltd.
    Inventors: Kiyoshi Nishimura, Hideki Hayashi, Jun Muramoto, Takaaki Fuchikami, Hiromi Uenoyama
  • Patent number: 5541873
    Abstract: A nonvolatile memory having a simple structure where recorded information can be read nondestructively. A voltage is applied between a control gate and a memory gate for writing. A ferroelectric layer is polarized in accordance with the polarization of the applied voltage. A control gate voltage, necessary to form a channel, is small when the ferroelectric layer is polarized with the control gate side negative (polarized with second polarization). The control gate voltage V.sub.cg necessary to form a channel is large when the ferroelectric layer is polarized with the control gate side positive (polarized with first polarization). The reference voltage is applied to the control gate for reading. A large drain current flows when the ferroelectric layer is polarized with the second polarization and a small drain current flows when the ferroelectric layer is polarized with the first polarization. Recorded information can be read by detecting the drain current.
    Type: Grant
    Filed: June 15, 1995
    Date of Patent: July 30, 1996
    Assignee: Rohm Co., Ltd.
    Inventors: Kiyoshi Nishimura, Hideki Hayashi, Jun Muramoto, Takaaki Fuchikami, Hiromi Uenoyama
  • Patent number: 5541871
    Abstract: Nonvolatile memory with simple structure where recorded information can be read without destroy: Voltage is impressed to control gate CG and channel is grounded at writing operation. Ferroelectric layer 32 is polarized in accordance with whether the applied voltage is larger than threshold voltage of the memory device. Control gate voltage V.sub.CC to make channel is little when the ferro-electric layer 32 is polarized with control gate side being positive (polarized with second status). Control gate voltage V.sub.CG to make channel is large when the ferroelectric layer 32 is polarized with control gate side being negative (polarized with first status). The reference voltage V.sub.ref is impressed to the control gate CG at reading operation. Large drain current flows when the ferroelectric layer is polarized with second status and little drain current flows when the ferroelectric layer is polarized with first status. Recorded information can be read by detecting the drain current.
    Type: Grant
    Filed: January 18, 1995
    Date of Patent: July 30, 1996
    Assignee: Rohm Co., Ltd.
    Inventors: Kiyoshi Nishimura, Hideki Hayashi, Jun Muramoto, Takaaki Fuchikami, Hiromi Uenoyama