Abstract: A tooling assembly suitable for use in chemical vapor infiltration (CVI) comprises a plurality of tooling fixtures arranged as a tower, with a central channel extending therethrough along a channel axis, and a lid atop the tower and covering the central channel. Each tooling fixture of the plurality of tooling fixtures comprises a plurality of walls defining an internal volume, and a plurality of holes through at least one wall of the plurality of walls, the plurality of holes placing the internal volume in flow communication with an external environment. Each tooling fixture of the plurality of tooling fixtures is in physical contact with an adjacent tooling fixture.

Abstract: A chemical vapor deposition system comprises a reactor including at least one wall extending between an inlet end and an outlet end, and an internal volume defined by the at least one wall, the inlet end, and the outlet end. The reactor further comprises a heat source in thermal communication with the internal volume, and a solid precursor container removably placed within the internal volume. The solid precursor container includes at least one internal cavity for holding an amount of the solid precursor, and an opening fluidly connecting the at least one internal cavity to the internal volume of the reactor. The solid precursor comprises at least one of aluminum, zirconium, hafnium, and a rare earth metallic element.

Abstract: A coating for an article includes a seal coat comprising self-healing particles disposed in a seal coat matrix and a bond coat disposed on the seal coat. The bond coat includes a matrix, diffusive particles disposed in the matrix, and gettering particles disposed in the matrix. A coating for an article and a method of applying a coating to an article are also disclosed.

Abstract: A coated fiber structure for use in a ceramic matrix composite comprises a fiber and an interface coating arrangement applied to and circumscribing the fiber. The interface coating arrangement comprises a first boron nitride layer, a silicon carbide layer extending coaxially with and in direct contact with the first boron nitride layer, and a second boron nitride layer on a side of the silicon carbide layer opposite the first boron nitride layer. The thickness of the silicon carbide layer ranges from 100 nm to 500 nm, and an RMS roughness of the silicon carbide layer is less than 20 nm.

Abstract: A method of depositing silicon carbide on a preform to form a ceramic matrix composite comprises placing the preform into a reaction vessel, removing air from the reaction vessel and backfilling the reaction vessel with an inert gas to an operating pressure. The reaction vessel and the preform are heated to an operating temperature. A carrier gas and precursor materials are heated to a preheat temperature outside of the reaction vessel. The carrier gas and the precursor materials are introduced to the reaction vessel in a specified ratio. Off gasses, the precursor materials that are unspent, and the carrier gas are removed from the reaction vessel to maintain the specified ratio of the precursor materials in the reaction vessel.

Abstract: Systems and methods for forming an oxidation protection system on a composite structure are provided. In various embodiments, the oxidation protection system comprises a boron-glass layer formed on the composite substrate and a silicon-glass layer formed over the boron-glass layer. Each of the boron-glass layer and the silicon-glass layer include a glass former and a glass modifier.

Abstract: Systems and methods for forming an oxidation protection system on a composite structure are provided. In various embodiments, the oxidation protection system comprises a boron-glass layer formed on the composite substrate and a silicon-glass layer formed over the boron-glass layer. Each of the boron-glass layer and the silicon-glass layer includes a glass former.

Abstract: A method of depositing silicon carbide on a preform to form a ceramic matrix composite comprises placing the preform into a reaction vessel, removing air from the reaction vessel and backfilling the reaction vessel with an inert gas to an operating pressure. The reaction vessel and the preform are heated to an operating temperature. A carrier gas and precursor materials are heated to a preheat temperature outside of the reaction vessel. The carrier gas and the precursor materials are introduced to the reaction vessel in a specified ratio. Off gasses, the precursor materials that are unspent, and the carrier gas are removed from the reaction vessel to maintain the specified ratio of the precursor materials in the reaction vessel.

Abstract: An aqueous treatment solution for increasing the cleaning capability of a treated copper surface comprising: a) an organic compound selected from the group consisting of organic acids, alcohols, ketone, nitriles and combinations of one or more of the foregoing; and b) an oxidizing agent. The aqueous treatment solution is usable in a process for metallizing the walls of holes within a printed wiring board substrate having metallic and non-metallic regions, wherein the printed wiring board is treated with a reducing agent and then contacted with an aqueous dispersion of carbonaceous particles to term a coating of the dispersion over the substrate. The process comprises the step of contacting the metallic regions of the printed wiring board substrate with the aqueous treatment solution to remove deposited carbonaceous particles therefrom. The aqueous treatment solution provides a clean copper surface while providing a low microetch rate.