Abstract: Disclosed are a bonding method for a semiconductor chip, which employs an ultrasonic bonding scheme that prevents wear-out of the top surface of a mount tool and ensures both high reliability and high productivity, and a bonding apparatus which is used to carry out the method. The bonding apparatus and method are provided with means for suppressing generation of a sliding friction. The apparatus and method execute a bonding process by controlling vibration-axial directional holding force and inertial force based on information given from control management means to thereby maintain a relationship of (vibration-axial directional holding force)>(die shear strength)+(inertial force) while applying an ultrasonic vibration to a region which is subjected to bonding.

Abstract: Disclosed are a bonding method for a semiconductor chip, which employs an ultrasonic bonding scheme that prevents wear-out of the top surface of a mount tool and ensures both high reliability and high productivity, and a bonding apparatus which is used to carry out the method. The bonding apparatus and method are provided with means for suppressing generation of a sliding friction. The apparatus and method execute a bonding process by controlling vibration-axial directional holding force and inertial force based on information given from control management means to thereby maintain a relationship of (vibration-axial directional holding force)>(die shear strength)+(inertial force) while applying an ultrasonic vibration to a region which is subjected to bonding.

Abstract: Disclosed are a bonding method for a semiconductor chip, which employs an ultrasonic bonding scheme that prevents wear-out of the top surface of a mount tool and ensures both high reliability and high productivity, and a bonding apparatus which is used to carry out the method. The bonding apparatus and method are provided with means for suppressing generation of a sliding friction. The apparatus and method execute a bonding process by controlling vibration-axial directional holding force and inertial force based on information given from control management means to thereby maintain a relationship of (vibration-axial directional holding force)>(die shear strength)+(inertial force) while applying an ultrasonic vibration to a region which is subjected to bonding.

Abstract: Disclosed are a bonding method for a semiconductor chip, which employs an ultrasonic bonding scheme that prevents wear-out of the top surface of a mount tool and ensures both high reliability and high productivity, and a bonding apparatus which is used to carry out the method. The bonding apparatus and method are provided with means for suppressing generation of a sliding friction.

Abstract: An object is to reduce impact load applied on a bonding subject at the time of wire contact detection and achieve a stable and highly precise fabrication of a bonding ball so as to shorten the bonding time. A wire bonding arm comprises: a Z driving shaft supported by a Z-axis base capable of swinging via a first shaft; and a low pressurizing shaft with a smaller inertia than that of the Z driving shaft having a capillary, which is supported on one end of the Z driving shaft to be capable of swinging via a second shaft. The capillary is brought down by the Z driving shaft to the position of the height right before an initial ball comes to contact with a first bonding point. Then, only the low pressurizing shaft is driven at low speed to be brought down while holding the Z driving shaft in position. At the point where the initial ball comes in contact with the first bonding point, a prescribed weight and ultrasonic vibrations are applied for bonding it to the first bonding point.

Abstract: A wire bonding device in accordance with the present invention is provided, which comprises: an XY table (2), a first holding member (8) supported by the XY table (2), a camera (9) supported by the first holding member (8), a second holding member (5) supported by the XY table (2), a capillary (7) held by the second holding member (5), a stationary base (3) for securing an object of bonding (4) in position, and a driving amount calculating unit (13) for computing the driving amount of the XY table (2) on the basis of the positional deviation of the camera (9) with respect to the origin of the XY table (2) due to temperature change in the first holding member (8) and the positional deviation of the capillary (7) with respect to the origin of the XY table (2) due to temperature change in the second holding member (5).

Abstract: An object is to reduce impact load applied on a bonding subject at the time of wire contact detection and achieve a stable and highly precise fabrication of a minute bonding ball so as to shorten the bonding time. A wire bonding arm comprises: a Z driving shaft supported by a Z-axis base to be capable of swinging via a first shaft; and a low pressurizing shaft with a smaller inertia than that of the Z driving shaft having a capillary, which is supported on one end of the Z driving shaft to be capable of swinging via a second shaft. The capillary is brought down by the swing of the Z driving shaft to the position of the height right before an initial ball comes to be in contact with a first bonding point. Then, only the low pressurizing shaft is swung to be driven at low speed to be brought down while holding the Z driving shaft in the position.

Abstract: A wire bonding device in accordance with the present invention is provided, which comprises: an XY table (2), a first holding member (8) supported by the XY table (2), a camera (9) supported by the first holding member (8), a second holding member (5) supported by the XY table (2), a capillary (7) held by the second holding member (5), a stationary base (3) for securing an object of bonding (4) in position, and a driving amount calculating unit (13) for computing the driving amount of the XY table (2) on the basis of the positional deviation of the camera (9) with respect to the origin of the XY table (2) due to temperature change in the first holding member (8) and the positional deviation of the capillary (7) with respect to the origin of the XY table (2) due to temperature change in the second holding member (5).