Abstract: A substrate processing method arranges a plurality of substrates in a storage area of a chamber, supplies an organic solvent to the plurality of substrates, arranges the plurality of substrates in a drying area, supplies a vapor of a hydrophobizing agent from a hydrophobizing agent nozzle to the plurality of substrates, arranges the plurality of substrates in the storage area, supplies an organic solvent from a first organic solvent nozzle to the plurality of substrates, supplies a vapor of an organic solvent from a second organic solvent nozzle to the drying area in a state where a liquid is stored in the storage area and the plurality of substrates are dipped in a liquid.

Abstract: A substrate processing apparatus includes a chamber, a holding unit, a hydrophobizing agent nozzle, a first organic solvent nozzle, a second organic solvent nozzle, and an exhaust port. The chamber has a gastight space that is capable of accommodating the plurality of substrates. The holding unit lifts or lowers the plurality of substrates between a storage area where a liquid is stored in the gastight space and a drying area that is located above the storage area in the gastight space. The hydrophobizing agent nozzle supplies a vapor of a hydrophobizing agent to the drying area. The first organic solvent nozzle supplies an organic solvent from the drying area to the storage area. The second organic solvent nozzle supplies a vapor of an organic solvent to the drying area. The exhaust port discharges a gas in the gastight space.

Abstract: A substrate processing apparatus includes a processing bath in which a substate is immersed to be processed; a mixer that generates a mixture liquid by mixing a phosphoric acid aqueous solution with an additive that suppresses precipitation of silicon oxide; a liquid path that supplies the mixture liquid from the mixer to the processing bath; a silicon solution supply that supplies a silicon-containing compound aqueous to the mixture liquid supplied from the mixer; and a controller that controls the processing bath, the mixer, the liquid path, and the silicon solution supply. When the substrate is immersed in the processing bath, the controller supplies the mixture liquid without the silicon-containing compound aqueous solution to the processing bath.

Abstract: A substrate processing method includes: generating a mixture liquid by mixing a phosphoric acid aqueous solution with an additive that suppresses precipitation of silicon oxide in a tank and circulating the mixture liquid through a circulation path that exits and returns to the tank, the circulation path including a back pressure valve; sending the mixture liquid to a processing bath through a liquid path diverging from the circulation path and positioned upstream from the back pressure valve; and supplying a silicon-containing compound aqueous solution to the mixture liquid generated in the generating. The back pressure valve is fully open in the generating and throttled in the sending. A substrate processing apparatus includes a processing bath, a mixing device, a liquid path, and a silicon solution supply.

Abstract: A substrate processing apparatus includes: a processing container, a mixing device, a liquid feeding path, and a controller. The processing container processes a substrate by immersing the substrate in a processing liquid. The mixing device mixes a phosphoric acid aqueous solution and an additive, to produce a mixed liquid to be used as a raw material of the processing liquid. The liquid feeding path feeds the mixed liquid from the mixing device to the processing container. The controller controls the substrate processing apparatus. The controller performs a control to feed the mixed liquid from the mixing device to the processing container in which the substrate is immersed, after a phosphoric acid concentration of the mixed liquid is regulated from a first concentration to a second concentration higher than the first concentration. The first concentration is a concentration when the phosphoric acid aqueous solution is supplied to the mixing device.

Abstract: A substrate processing apparatus includes a liquid processing tank, and a hydrophobizing gas supply unit. The liquid processing tank stores a processing liquid and dips a plurality of substrates in the processing liquid to liquid-process the plurality of substrates. The hydrophobizing gas supply unit supplies a gas of a hydrophobizing agent to the plurality of substrates after liquid processing thereof.

Abstract: A mixing apparatus includes a phosphoric acid aqueous solution supply, an additive supply, a tank, a phosphoric acid aqueous solution supply path and an additive supply path. The phosphoric acid aqueous solution supply is configured to supply a phosphoric acid aqueous solution. The additive supply is configured to supply an additive configured to suppress precipitation of a silicon oxide. The phosphoric acid aqueous solution supply path is configured to connect the phosphoric acid aqueous solution supply with the tank. The additive supply path is configured to connect the additive supply with the tank. The additive is supplied while fluidity is imparted to the phosphoric acid aqueous solution supplied from the phosphoric acid aqueous solution supply into the tank.

Abstract: A method of processing a substrate includes loading the substrate to which a processing liquid is adhered, inside a processing container, removing the processing liquid adhering to the substrate by supplying a first organic solvent to the loaded substrate, causing the substrate to be water-repellent by supplying a water repellent to the substrate from which the processing liquid has been removed, supplying a second organic solvent to the water-repellent substrate, and drying the substrate by volatilizing the second organic solvent adhering to the substrate.

Abstract: A substrate processing apparatus includes a chamber, a holding unit, a hydrophobizing agent nozzle, a first organic solvent nozzle, a second organic solvent nozzle, and an exhaust port. The chamber has a gastight space that is capable of accommodating the plurality of substrates. The holding unit lifts or lowers the plurality of substrates between a storage area where a liquid is stored in the gastight space and a drying area that is located above the storage area in the gastight space. The hydrophobizing agent nozzle supplies a vapor of a hydrophobizing agent to the drying area. The first organic solvent nozzle supplies an organic solvent from the drying area to the storage area. The second organic solvent nozzle supplies a vapor of an organic solvent to the drying area. The exhaust port discharges a gas in the gastight space.

Abstract: A substrate processing method arranges a plurality of substrates in a storage area of a chamber, supplies an organic solvent to the plurality of substrates, arranges the plurality of substrates in a drying area, supplies a vapor of a hydrophobizing agent from a hydrophobizing agent nozzle to the plurality of substrates, arranges the plurality of substrates in the storage area, supplies an organic solvent from a first organic solvent nozzle to the plurality of substrates, supplies a vapor of an organic solvent from a second organic solvent nozzle to the drying area in a state where a liquid is stored in the storage area and the plurality of substrates are dipped in a liquid.

Abstract: A substrate processing apparatus includes a liquid processing tank, and a hydrophobizing gas supply unit. The liquid processing tank stores a processing liquid and dips a plurality of substrates in the processing liquid to liquid-process the plurality of substrates. The hydrophobizing gas supply unit supplies a gas of a hydrophobizing agent to the plurality of substrates after liquid processing thereof.

Abstract: A substrate processing method includes: generating a mixture liquid by mixing a phosphoric acid aqueous solution with an additive that suppresses precipitation of silicon oxide in a tank and circulating the mixture liquid through a circulation path that exits and returns to the tank, the circulation path including a back pressure valve; sending the mixture liquid to a processing bath through a liquid path diverging from the circulation path and positioned upstream from the back pressure valve; and supplying a silicon-containing compound aqueous solution to the mixture liquid generated in the generating. The back pressure valve is fully open in the generating and throttled in the sending. A substrate processing apparatus includes a processing bath, a mixing device, a liquid path, and a silicon solution supply.

Abstract: A control device of a substrate processing apparatus includes a reading unit, an estimation unit, a comparison unit, and a correction unit. The reading unit reads out a reference processing condition for processing a substrate. The estimation unit estimates an actual processing condition when the substrate is processed. The comparison unit compares the reference processing condition and the actual processing condition with each other. The correction unit corrects a processing condition for the substrate based on a comparison result in the comparison unit.

Abstract: A substrate processing apparatus includes a processing bath, a mixing device, a liquid path, and a silicon solution supply. A substrate is immersed in the processing bath to be processed. The mixing device generates a mixture liquid by mixing a phosphoric acid aqueous solution with an additive that suppresses precipitation of silicon oxide. The liquid path sends the mixture liquid from the mixing device to the processing bath. The silicon solution supply is connected to at least one of the liquid path and the processing bath, and supplies a silicon-containing compound aqueous solution to the mixture liquid supplied from the mixing device.

Abstract: A method of processing a substrate includes loading the substrate to which a processing liquid is adhered, inside a processing container, removing the processing liquid adhering to the substrate by supplying a first organic solvent to the loaded substrate, causing the substrate to be water-repellent by supplying a water repellent to the substrate from which the processing liquid has been removed, supplying a second organic solvent to the water-repellent substrate, and drying the substrate by volatilizing the second organic solvent adhering to the substrate.

Abstract: A storage device according to an aspect of the present disclosure includes a storage tank, a heating mechanism, and a controller. The storage tank stores a processing liquid that contains an aqueous solution of phosphoric acid and an additive. The heating mechanism heats the processing liquid that is stored in the storage tank. The controller controls the heating mechanism to execute a concentration maintaining process where a temperature of the processing liquid is adjusted in such a manner that an amount of evaporation of water for the processing liquid in the storage tank approaches an amount of absorption of moisture for the processing liquid in the storage tank.

Abstract: A substrate processing apparatus includes: a processing container, a mixing device, a liquid feeding path, and a controller. The processing container processes a substrate by immersing the substrate in a processing liquid. The mixing device mixes a phosphoric acid aqueous solution and an additive, to produce a mixed liquid to be used as a raw material of the processing liquid. The liquid feeding path feeds the mixed liquid from the mixing device to the processing container. The controller controls the substrate processing apparatus. The controller performs a control to feed the mixed liquid from the mixing device to the processing container in which the substrate is immersed, after a phosphoric acid concentration of the mixed liquid is regulated from a first concentration to a second concentration higher than the first concentration. The first concentration is a concentration when the phosphoric acid aqueous solution is supplied to the mixing device.

Abstract: A substrate processing apparatus includes a processing bath, a mixing device, a liquid path, and a silicon solution supply. A substrate is immersed in the processing bath to be processed. The mixing device generates a mixture liquid by mixing a phosphoric acid aqueous solution with an additive that suppresses precipitation of silicon oxide. The liquid path sends the mixture liquid from the mixing device to the processing bath. The silicon solution supply is connected to at least one of the liquid path and the processing bath, and supplies a silicon-containing compound aqueous solution to the mixture liquid supplied from the mixing device.

Abstract: A mixing apparatus includes a phosphoric acid aqueous solution supply, an additive supply, a tank, a phosphoric acid aqueous solution supply path and an additive supply path. The phosphoric acid aqueous solution supply is configured to supply a phosphoric acid aqueous solution. The additive supply is configured to supply an additive configured to suppress precipitation of a silicon oxide. The phosphoric acid aqueous solution supply path is configured to connect the phosphoric acid aqueous solution supply with the tank. The additive supply path is configured to connect the additive supply with the tank. The additive is supplied while fluidity is imparted to the phosphoric acid aqueous solution supplied from the phosphoric acid aqueous solution supply into the tank.

Abstract: A substrate processing apparatus includes a holding device that holds a substrate horizontally, a rotation device that rotates the holding device such that the substrate held by the holding device is rotated, a supply device that includes a nozzle and supplies etching liquid from the nozzle to the substrate held by the holding device, a movement device that moves the nozzle with respect to the substrate held by the holding device, and a control device including circuitry that executes a scan process in which the circuitry controls the rotation, movement and supply devices such that while the liquid is supplied from the nozzle to the substrate, the nozzle is moved back and forth over the substrate between first and second positions on outer peripheral side of the substrate relative to the first position. The circuit of the control device executes the scan process multiple times while changing the first position.