Patents by Inventor Jun Oiu

Jun Oiu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Graded composition ohmic contact for P-type II-VI semiconductors
    Patent number: 5396103
    Abstract: A II-VI laser diode including a substrate, a device layer of p-type II-VI semiconductor, an electrode and an ohmic contact layer between the electrode and device layer. The ohmic contact layer comprises a graded composition semiconductor compound including ZnTe. The relative amount of ZnTe in the semiconductor compound increases with increasing distance of the ohmic contact layer from the device layer. In a first embodiment the ohmic contact layer comprises a graded composition semiconductor alloy including the semiconductor compound of the device layer and ZnTe. The amount of ZnTe in the alloy increases with increasing distance of the ohmic contact layer from the device layer in the first embodiment. In a second embodiment the ohmic contact layer includes layers of ZnTe spaced between layers of the semiconductor compound of the device layer.
    Type: Grant
    Filed: February 12, 1993
    Date of Patent: March 7, 1995
    Assignee: Minnesota Mining and Manufacturing Company
    Inventors: Jun Oiu, James M. DePuydt, Hwa Cheng, Michael A. Haase