Abstract: A large-heat-input butt-welded joint of welded structures prepared by butt-welding high-strength steel plates over 50 mm in thickness, having excellent brittle fracture resistance, is characterized by: (a1) the hardness of the weld metal is not more than 110% of the hardness of the base metal or (a2) the hardness of the weld metal is not less than 70% and not more than 110% of the hardness of the base metal, and, as required, (b) the width of the weld metal is not more than 70% of the plate thickness of the base metal, (c) the width of the region affected by welding whose hardness is softened to not more than 95% of the hardness of the non-heat-affected base metal has a width not less than 5 mm, and/or (d) the prior austenite grain size in the heat-affected zone (HAZ) contacting the welding fusion line is not more than 200 ?m.

Abstract: A nonvolatile semiconductor memory device includes a free layer having first and second magnetic layers magnetized oppositely to each other, and also having a first nonmagnetic layer formed between the first and second magnetic layers, a first fixed layer having a fixed magnetization direction, a second nonmagnetic layer formed between the second magnetic layer and the first fixed layer, a first drive circuit passing a write current through a first write current line in a data write operation, and thereby generating a data write magnetic field acting on magnetization of the free layer, and a second drive circuit passing a spin injection current between the first magnetic layer and the first fixed layer in a data write operation, and thereby exerting a force in the same direction as or in the direction opposite to the magnetization direction of the first fixed layer on the magnetization of the free layer.

Abstract: The present invention provides a high-strength thick steel plate having a plate thickness of 50 to 80 mm and a tensile strength of 490 to 570 MPa which is able to realize an excellent HAZ toughness even when welding with a heat input of 20 to 100 kJ/mm is conducted and is characterized by containing, by wt %, 0.03-0.14% of C, 0.30% or less of Si, 0.8-2.0% of Mn, 0.02% or less of P, 0.005% or less of S, 0.8-4.0% of Ni, 0.003-0.040% of Nb, 0.001-0.040% of Al, 0.0010-0.0100% of N, and 0.005-0.030% of Ti, where Ni and Mn satisfy equation [1], and the balance of iron and unavoidable impurities: Ni/Mn?10×Ceq?3 (0.36<Ceq<0.

Abstract: A large-heat-input butt-welded joint of welded structures prepared by butt-welding high-strength steel plates over 50 mm in thickness, having excellent brittle fracture resistance, is characterized by: (a1) the hardness of the weld metal is not more than 110% of the hardness of the base metal or (a2) the hardness of the weld metal is not less than 70% and not more than 110% of the hardness of the base metal, and, as required, (b) the width of the weld metal is not more than 70% of the plate thickness of the base metal, (c) the width of the region affected by welding whose hardness is softened to not more than 95% of the hardness of the non-heat-affected base metal has a width not less than 5 mm, and/or (d) the prior austenite grain size in the heat-affected zone (HAZ) contacting the welding fusion line is not more than 200 ?m.

Abstract: A nonvolatile semiconductor memory device includes a free layer having first and second magnetic layers magnetized oppositely to each other, and also having a first nonmagnetic layer formed between the first and second magnetic layers, a first fixed layer having a fixed magnetization direction, a second nonmagnetic layer formed between the second magnetic layer and the first fixed layer, a first drive circuit passing a write current through a first write current line in a data write operation, and thereby generating a data write magnetic field acting on magnetization of the free layer, and a second drive circuit passing a spin injection current between the first magnetic layer and the first fixed layer in a data write operation, and thereby exerting a force in the same direction as or in the direction opposite to the magnetization direction of the first fixed layer on the magnetization of the free layer.