Abstract: The present invention provides a fiber-reinforced-resin composite molded article including: a rigid layer that is formed of a fiber-reinforced-resin material for a rigid layer; a shaping layer that is formed, at least on one side of the rigid layer, of a shaping-layer compound composed of a thermosetting resin and fibers that are shorter than fibers contained in the fiber-reinforced-resin material for a rigid layer; and a cured resin being formed of a liquid-state resin that is deposited on the surface of the shaping layer. The fiber-reinforced-resin composite molded article has a structure in which the fiber-reinforced-resin material for a rigid layer, the shaping-layer compound, and the liquid-state resin are cured under heat and pressure in a layered state.

Abstract: Surfaces of a carbon-fiber composite material is constructed by a carbon fiber prepregs by arranging a porous prepreg between the carbon fiber prepregs, at least one of a concave portion and a convex portion is formed on at least one surface of the carbon composite material, and, as compared to a normal portion without the concave portion and the convex portion, a thickness of the porous prepreg at the concave portion is reduced and a thickness of the porous prepreg at the convex portion is increased.

Abstract: A carbon fiber reinforced composite material including at least two carbon fiber fabrics and a thermoplastic resin, wherein each of the at least two carbon fiber fabrics is formed of an opened yarn obtained by opening a carbon fiber bundle, and the thermoplastic resin is impregnated with the at least two carbon fiber fabrics in a solidified state such that the carbon fiber reinforced composite material is formed integrally as a whole. Also disclosed is a method for producing the carbon fiber reinforced composite material.

Abstract: A substrate processing apparatus includes a chamber accommodating a wafer, a susceptor disposed inside the chamber and on which the wafer is held, an upper electrode facing the susceptor, and a second high frequency power source connected to the susceptor, wherein the upper electrode is electrically connected to a ground and is moveable with respect to the susceptor. The substrate processing apparatus divides a potential difference between plasma generated in a processing space and the ground into a potential difference between the plasma and a dielectric and a potential difference between the dielectric and the ground by burying the dielectric in the upper electrode, and changes a gap between the upper electrode and the susceptor. Accordingly, plasma density between the upper electrode and the susceptor is changed.

Abstract: Surfaces of a carbon-fiber composite material is constructed by a carbon fiber prepregs by arranging a porous prepreg between the carbon fiber prepregs, at least one of a concave portion and a convex portion is formed on at least one surface of the carbon composite material, and, as compared to a normal portion without the concave portion and the convex portion, a thickness of the porous prepreg at the concave portion is reduced and a thickness of the porous prepreg at the convex portion is increased.

Abstract: A carbon fibre reinforced composite material including at least two carbon fibre fabrics and a thermoplastic resin, wherein each of the at least two carbon fibre fabrics is formed of an opened yarn obtained by opening a carbon fibre bundle, and the thermoplastic resin is impregnated with the at least two carbon fibre fabrics in a solidified state such that the carbon fibre reinforced composite material is formed integrally as a whole. Also disclosed is a method for producing the carbon fibre reinforced composite material.

Abstract: A substrate processing apparatus includes a chamber accommodating a wafer, a susceptor disposed inside the chamber and on which the wafer is held, an upper electrode facing the susceptor, and a second high frequency power source connected to the susceptor, wherein the upper electrode is electrically connected to a ground and is moveable with respect to the susceptor. The substrate processing apparatus divides a potential difference between plasma generated in a processing space and the ground into a potential difference between the plasma and a dielectric and a potential difference between the dielectric and the ground by burying the dielectric in the upper electrode, and changes a gap between the upper electrode and the susceptor.

Abstract: A substrate processing apparatus includes a chamber accommodating a wafer, a susceptor disposed inside the chamber and on which the wafer is held, an upper electrode facing the susceptor, and a second high frequency power source connected to the susceptor, wherein the upper electrode is electrically connected to a ground and is moveable with respect to the susceptor. The substrate processing apparatus divides a potential difference between plasma generated in a processing space and the ground into a potential difference between the plasma and a dielectric and a potential difference between the dielectric and the ground by burying the dielectric in the upper electrode, and changes a gap between the upper electrode and the susceptor. Accordingly, plasma density between the upper electrode and the susceptor is changed.

Abstract: Provided is a method of setting a thickness of a dielectric, which restrains the dielectric formed in an electrode from being consumed when etching a silicon dioxide film on a substrate by using plasma. In a substrate processing apparatus including an upper electrode facing a susceptor and the dielectric formed of silicon dioxide in the upper electrode, a silicon dioxide film formed on a wafer being etched by using plasma, an electric potential of the plasma facing the dielectric in a case where the dielectric is not formed in the upper electrode is estimated based on a bias power applied to the susceptor and an A/C ratio in a chamber, and the thickness of the dielectric is determined so that an electric potential of the plasma, which is obtained by multiplying the estimated electric potential of the plasma by a capacity reduction coefficient calculated when a capacity of the dielectric and a capacity of a sheath generated around a surface of the dielectric are combined, is 100 eV or less.

Abstract: An electrode unit is disposed in a substrate processing apparatus including a processing chamber for processing a substrate by plasma. The electrode unit includes an electrode layer having a surface exposed to inside of the processing chamber and an opposing surface disposed at the opposite side of the exposed surface, a heating layer and a cooling layer that the electrode layer, the heating layer and the cooling layer are disposed in said order from the processing chamber. The heating layer covers the opposing surface of the electrode layer while the cooling layer covers the opposing surface of the electrode layer via the heating layer, and a heat transfer layer filled up with a heat transfer medium is interposed between the heating layer and the cooling layer.

Abstract: A substrate processing apparatus includes a chamber accommodating a wafer, a susceptor disposed inside the chamber and on which the wafer is held, an upper electrode facing the susceptor, and a second high frequency power source connected to the susceptor, wherein the upper electrode is electrically connected to a ground and is moveable with respect to the susceptor. The substrate processing apparatus divides a potential difference between plasma generated in a processing space and the ground into a potential difference between the plasma and a dielectric and a potential difference between the dielectric and the ground by burying the dielectric in the upper electrode, and changes a gap between the upper electrode and the susceptor.

Abstract: Provided is a method of setting a thickness of a dielectric, which restrains the dielectric formed in an electrode from being consumed when etching a silicon dioxide film on a substrate by using plasma. In a substrate processing apparatus including an upper electrode facing a susceptor and the dielectric formed of silicon dioxide in the upper electrode, a silicon dioxide film formed on a wafer being etched by using plasma, an electric potential of the plasma facing the dielectric in a case where the dielectric is not formed in the upper electrode is estimated based on a bias power applied to the susceptor and an A/C ratio in a chamber, and the thickness of the dielectric is determined so that an electric potential of the plasma, which is obtained by multiplying the estimated electric potential of the plasma by a capacity reduction coefficient calculated when a capacity of the dielectric and a capacity of a sheath generated around a surface of the dielectric are combined, is 100 eV or less.

Abstract: An electrode unit is disposed in a substrate processing apparatus including a processing chamber for processing a substrate by plasma. The electrode unit includes an electrode layer having a surface exposed to inside of the processing chamber and an opposing surface disposed at the opposite side of the exposed surface, a heating layer and a cooling layer that the electrode layer, the heating layer and the cooling layer are disposed in said order from the processing chamber. The heating layer covers the opposing surface of the electrode layer while the cooling layer covers the opposing surface of the electrode layer via the heating layer, and a heat transfer layer filled up with a heat transfer medium is interposed between the heating layer and the cooling layer.

Abstract: A substrate processing apparatus that can prevent a heat transfer sheet from becoming attached to a focus ring mounting surface of a substrate mounting stage. The substrate mounting stage is disposed in a housing chamber of the substrate processing apparatus, and a substrate is mounted on the substrate mounting stage. A focus ring that surrounds a peripheral portion of the mounted substrate is mounted on the focus ring mounting surface. The heat transfer sheet is interposed between the focus ring and the focus ring mounting surface, and a fluorine coating is formed on the focus ring mounting surface.

Abstract: An electrode assembly, for use in a plasma processing apparatus which generates a plasma by forming a high frequency electric field in a processing chamber accommodating a substrate to be processed, includes a plate shaped member formed of a metal matrix composite material. The plate shaped member has an electric resistance distribution such that an electric resistance in a central portion of the plate shaped member is greater than that in a peripheral portion thereof.

Abstract: The present invention provides a plasma processing apparatus, comprising a chamber for applying a film depositing treatment or an etching treatment to a target object by utilizing plasma, and a gate liner covering the surface of the open portion of a chamber gate for transferring the target object into and out of the chamber so as to prevent the chamber gate from being affected by the plasma. A gate aspect ratio, which is a ratio of the depth of the open portion of the chamber gate to the length in the short-side direction, is determined in accordance with the anode/cathode ratio, which is a ratio in area of the anode region to the cathode region within the chamber, so as to prevent an abnormal discharge within the gate space.

Abstract: Inside a processing chamber 102 of an etching apparatus 100, a pair of electrodes, i.e., an upper electrode 118 and a lower electrode 106, are provided. The circumferential edge of the upper electrode 118 is covered by a first ring-shaped body 122, and a cylindrical body 124 is provided around the first ring-shaped body 122. A second ring-shaped body 116 is provided around the lower electrode 106. When the lower electrode 106 is set at the processing position, the second ring-shaped body 116 is positioned inside the cylindrical body 124 to form a plasma space 102a. A gas discharge path 142 is formed between the cylindrical body 124 and the second ring-shaped body 116. The distance between the cylindrical body 124 and the second ring-shaped body 116 is set so as to ensure that the conductance value of the gas inside the gas discharge path 142 is higher than the conductance value of the gas inside the plasma space 102a.