Abstract: A method of fabricating a metal thin film-on-glass structure. A glass substrate, on a top surface of which a layer is formed, is prepared. A local area of the glass substrate is etched from a bottom of the glass substrate to expose the layer downwardly, thereby forming an exposed area of the layer. The layer is a metal thin film. The etching includes first-etching the glass substrate to a depth less than a thickness of the glass substrate using a first etching solution containing hydrofluoric acid and at least one of nitric acid and sulfuric acid, resulting in a first-etched portion of the glass substrate; and second-etching the first-etched portion of the glass substrate using an etching solution containing hydrofluoric acid without nitric acid or sulfuric acid, so that the layer is exposed downwardly, whereby the metal thin film is supported by a remaining portion of the glass substrate.

Abstract: A method of fabricating a metal thin film-on-glass structure. A glass substrate, on a top surface of which a layer is formed, is prepared. A local area of the glass substrate is etched from a bottom of the glass substrate to expose the layer downwardly, thereby forming an exposed area of the layer. The layer is a metal thin film. The etching includes first-etching the glass substrate to a depth less than a thickness of the glass substrate using a first etching solution containing hydrofluoric acid and at least one of nitric acid and sulfuric acid, resulting in a first-etched portion of the glass substrate; and second-etching the first-etched portion of the glass substrate using an etching solution containing hydrofluoric acid without nitric acid or sulfuric acid, so that the layer is exposed downwardly, whereby the metal thin film is supported by a remaining portion of the glass substrate.

Abstract: The present disclosure relates to a reconstituted wafer- and/or panel-level package comprising a glass substrate having a plurality of cavities. Each cavity is configured to hold a single IC chip. The reconstituted wafer- and/or panel-level package can be used in a fan-out wafer or panel level packaging process. The glass substrate can include at least two layers having different photosensitivities with one layer being sufficiently photosensitive to be capable of being photomachined to form the cavities.

Abstract: The present disclosure relates to a reconstituted wafer- and/or panel-level package comprising a glass substrate having a plurality of cavities. Each cavity is configured to hold a single IC chip. The reconstituted wafer- and/or panel-level package can be used in a fan-out wafer or panel level packaging process. The glass substrate can include at least two layers having different photosensitivities with one layer being sufficiently photosensitive to be capable of being photomachined to form the cavities.

Abstract: The present disclosure relates to a reconstituted wafer- and/or panel-level package comprising a glass substrate having a plurality of cavities. Each cavity is configured to hold a single IC chip. The reconstituted wafer- and/or panel-level package can be used in a fan-out wafer or panel level packaging process. The glass substrate can include at least two layers having different photosensitivities with one layer being sufficiently photosensitive to be capable of being photomachined to form the cavities.

Abstract: An article including a support unit, the support unit including a support substrate and a bonding layer such that the bonding layer is bonded to a surface of the support substrate. Furthermore, a total thickness variation TTV across a width of the support unit is about 2.0 microns or less.

Abstract: A method of fabricating a metal thin film-on-glass structure. A glass substrate, on a top surface of which a layer is formed, is prepared. A local area of the glass substrate is etched from a bottom of the glass substrate to expose the layer downwardly, thereby forming an exposed area of the layer. The layer is a metal thin film. The etching includes first-etching the glass substrate to a depth less than a thickness of the glass substrate using a first etching solution containing hydrofluoric acid and at least one of nitric acid and sulfuric acid, resulting in a first-etched portion of the glass substrate; and second-etching the first-etched portion of the glass substrate using an etching solution containing hydrofluoric acid without nitric acid or sulfuric acid, so that the layer is exposed downwardly, whereby the metal thin film is supported by a remaining portion of the glass substrate.

Abstract: The present disclosure relates to a reconstituted wafer- and/or panel-level package comprising a glass substrate having a plurality of cavities. Each cavity is configured to hold a single IC chip. The reconstituted wafer- and/or panel-level package can be used in a fan-out wafer or panel level packaging process. The glass substrate can include at least two layers having different photosensitivities with one layer being sufficiently photosensitive to be capable of being photomachined to form the cavities.

Abstract: A method of producing nanoparticles by using chemical curing. The method includes depositing a metal thin film on a substrate, applying an insulator precursor on a metal thin film, and adding a curing agent and a catalyst to the insulator precursor to perform the chemical curing. The method also includes mixing metal powder and an insulator precursor, applying a mixture on a substrate, and adding a curing agent and a catalyst to the mixture to perform the chemical curing. Since the chemical curing process is used in the method, it is possible to form nanoparticles by using a simple process at low cost while a high temperature process such as thermal curing is not used.

Abstract: Disclosed is a method of producing nanoparticles by using chemical curing. The method includes depositing a metal thin film on a substrate, applying an insulator precursor on a metal thin film, and adding a curing agent and a catalyst to the insulator precursor to perform the chemical curing. The method also includes mixing metal powder and an insulator precursor, applying a mixture on a substrate, and adding a curing agent and a catalyst to the mixture to perform the chemical curing. Since the chemical curing process is used in the method, it is possible to form nanoparticles by using a simple process at low cost while a high temperature process such as thermal curing is not used.