Patents by Inventor Jun-Rong Chen

Jun-Rong Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10573784
    Abstract: A micro light emitting diode includes a die-bonding substrate, an adhesive layer, an undoped III-V group semiconductor layer, an N-type III-V group semiconductor layer, a light emitting layer, and a P-type III-V group semiconductor layer. The adhesive layer is disposed on the die-bonding substrate. The undoped III-V group semiconductor layer is disposed on the adhesive layer, and the adhesive layer is between the die-bonding substrate and the undoped III-V group semiconductor layer. The N-type III-V group semiconductor layer is disposed on the undoped III-V group semiconductor layer. The light emitting layer is disposed on the N-type III-V group semiconductor layer. The P-type III-V group semiconductor layer is disposed on the N-type III-V group semiconductor layer, and the light emitting layer is between the N-type III-V group semiconductor layer and the P-type III-V group semiconductor layer.
    Type: Grant
    Filed: July 18, 2018
    Date of Patent: February 25, 2020
    Assignee: LEXITAR ELECTRONICS CORPORATION
    Inventors: Shiou-Yi Kuo, Jun-Rong Chen, Guo-Yi Shiu
  • Publication number: 20200057528
    Abstract: A touch module includes a touch panel unit, a conductive adhesive layer and a circuit board. The touch panel unit includes a substrate, a touch sensing structure disposed on the substrate, a signal transmitting structure disposed on the substrate and electrically connected to the touch sensing structure, and a protection layer covering a part of a surface of the signal transmitting structure. The protection layer and the substrate are disposed at two opposite sides of the signal transmitting structure. The conductive adhesive layer has a main portion which covers a region of the signal transmitting structure on which the protection layer is not disposed, and a cover portion which extends from the main portion and covers the protection layer. The circuit board is disposed on the conductive adhesive layer, and the circuit board and the signal transmitting structure are disposed at two opposite sides of the conductive adhesive layer.
    Type: Application
    Filed: August 15, 2019
    Publication date: February 20, 2020
    Inventors: Qi-Bin LIU, You-Zhi SHE, Kuo-Lung FANG, Jun-Rong CHEN, Shih-Hao CHEN, Jun-Ping YANG, Xiao-Xia YOU, Qi-Jun ZHENG, Jun-Jie ZHENG
  • Publication number: 20190081210
    Abstract: A micro light emitting diode includes a die-bonding substrate, an adhesive layer, an undoped III-V group semiconductor layer, an N-type III-V group semiconductor layer, a light emitting layer, and a P-type III-V group semiconductor layer. The adhesive layer is disposed on the die-bonding substrate. The undoped III-V group semiconductor layer is disposed on the adhesive layer, and the adhesive layer is between the die-bonding substrate and the undoped III-V group semiconductor layer. The N-type III-V group semiconductor layer is disposed on the undoped III-V group semiconductor layer. The light emitting layer is disposed on the N-type III-V group semiconductor layer. The P-type III-V group semiconductor layer is disposed on the N-type III-V group semiconductor layer, and the light emitting layer is between the N-type III-V group semiconductor layer and the P-type III-V group semiconductor layer.
    Type: Application
    Filed: July 18, 2018
    Publication date: March 14, 2019
    Inventors: Shiou-Yi KUO, Jun-Rong CHEN, Guo-Yi SHIU
  • Patent number: 10211598
    Abstract: A side-view light emitting laser element includes a support substrate, a first electrode layer, a second electrode layer, and a light emitting multilayer unit sandwiched between the first electrode layer and the second electrode layer. The first electrode layer is disposed on the support substrate. The second electrode layer is disposed on the first electrode layer. The light emitting multilayer unit includes a first semiconductor layer, a second semiconductor layer and an activating layer sandwiched between the first semiconductor layer and the second semiconductor layer. A first refractive index of the first electrode layer and a second refractive index of the second electrode layer are between 1 and 0, respectively.
    Type: Grant
    Filed: June 29, 2017
    Date of Patent: February 19, 2019
    Assignee: LEXTAR ELECTRONICS CORPORATION
    Inventors: Te-Chung Wang, Shiou-Yi Kuo, Jun-Rong Chen
  • Patent number: 9892911
    Abstract: An epitaxial structure includes a substrate, a first epitaxial layer and a second epitaxial layer. The substrate has a surface, and the first epitaxial layer is disposed over the substrate and defines a plurality of slanting air voids tapering away from the substrate and an opening over each of the slanting air voids. The second epitaxial layer is disposed on the first epitaxial layer and collectively defines the slanting air voids in a shape of trapezoid with the first epitaxial layer.
    Type: Grant
    Filed: February 9, 2017
    Date of Patent: February 13, 2018
    Assignee: Lextar Electronics Corporation
    Inventors: Jun-Rong Chen, Hsiu-Mei Chou, Jhao-Cheng Ye
  • Publication number: 20180019575
    Abstract: A side-view light emitting laser element includes a support substrate, a first electrode layer, a second electrode layer, and a light emitting multilayer unit sandwiched between the first electrode layer and the second electrode layer. The first electrode layer is disposed on the support substrate. The second electrode layer is disposed on the first electrode layer. The light emitting multilayer unit includes a first semiconductor layer, a second semiconductor layer and an activating layer sandwiched between the first semiconductor layer and the second semiconductor layer. A first refractive index of the first electrode layer and a second refractive index of the second electrode layer are between 1 and 0, respectively.
    Type: Application
    Filed: June 29, 2017
    Publication date: January 18, 2018
    Inventors: Te-Chung WANG, Shiou-Yi KUO, Jun-Rong CHEN
  • Patent number: 9673353
    Abstract: An epitaxial structure includes a substrate, a first epitaxial layer and a second epitaxial layer. The substrate has a surface, and the first epitaxial layer is disposed over the substrate and defines a plurality of slanting air voids tapering away from the substrate and an opening over each of the slanting air voids. The second epitaxial layer is disposed on the first epitaxial layer and collectively defines the slanting air voids in a shape of trapezoid with the surface and the first epitaxial layer.
    Type: Grant
    Filed: April 23, 2015
    Date of Patent: June 6, 2017
    Assignee: Lextar Electronics Corporation
    Inventors: Jun-Rong Chen, Hsiu-Mei Chou, Jhao-Cheng Ye
  • Publication number: 20170154769
    Abstract: An epitaxial structure includes a substrate, a first epitaxial layer and a second epitaxial layer. The substrate has a surface, and the first epitaxial layer is disposed over the substrate and defines a plurality of slanting air voids tapering away from the substrate and an opening over each of the slanting air voids. The second epitaxial layer is disposed on the first epitaxial layer and collectively defines the slanting air voids in a shape of trapezoid with the first epitaxial layer.
    Type: Application
    Filed: February 9, 2017
    Publication date: June 1, 2017
    Inventors: Jun-Rong CHEN, Hsiu-Mei CHOU, Jhao-Cheng YE
  • Publication number: 20170148951
    Abstract: An epitaxial structure includes a substrate, a first epitaxial layer and a second epitaxial layer. The substrate has a surface, and the first epitaxial layer is disposed over the substrate and defines a plurality of stepped air voids and an opening over each of the stepped air voids. The second epitaxial layer is disposed on the first epitaxial layer and collectively defines the stepped air voids with the first epitaxial layer.
    Type: Application
    Filed: February 8, 2017
    Publication date: May 25, 2017
    Inventors: Jun-Rong CHEN, Hsiu-Mei CHOU, Jhao-Cheng YE
  • Patent number: 9601661
    Abstract: An epitaxial structure includes a substrate, a first epitaxial layer and a second epitaxial layer. The substrate has a surface, and the first epitaxial layer is disposed over the substrate and defines a plurality of stepped air voids and an opening over each of the stepped air voids. The second epitaxial layer is disposed on the first epitaxial layer and collectively defines the stepped air voids with the surface and the first epitaxial layer.
    Type: Grant
    Filed: April 23, 2015
    Date of Patent: March 21, 2017
    Assignee: LEXTAR ELECTRONICS CORPORATION
    Inventors: Jun-Rong Chen, Hsiu-Mei Chou, Jhao-Cheng Ye
  • Patent number: 9570653
    Abstract: A method for fabricating a light-emitting device is provided. The method includes: providing a substrate; forming a sacrificial dielectric layer on the substrate, wherein the sacrificial dielectric layer is a structure containing voids; forming a buffer layer on the sacrificial dielectric layer; forming an epitaxial light-emitting structure on the buffer layer; forming a metal bonding layer on the epitaxial light-emitting structure; bonding the metal bonding layer to a thermally conductive substrate; and wet etching the sacrificial dielectric layer for to remove the substrate.
    Type: Grant
    Filed: August 21, 2012
    Date of Patent: February 14, 2017
    Assignee: LEXTAR ELECTRONICS CORPORATION
    Inventors: Kuo-Lung Fang, Chi-Wen Kuo, Jun-Rong Chen, Chih-Hao Yang
  • Publication number: 20150228853
    Abstract: An epitaxial structure includes a substrate, a first epitaxial layer and a second epitaxial layer. The substrate has a surface, and the first epitaxial layer is disposed over the substrate and defines a plurality of slanting air voids tapering away from the substrate and an opening over each of the slanting air voids. The second epitaxial layer is disposed on the first epitaxial layer and collectively defines the slanting air voids in a shape of trapezoid with the surface and the first epitaxial layer.
    Type: Application
    Filed: April 23, 2015
    Publication date: August 13, 2015
    Inventors: Jun-Rong CHEN, Hsiu-Mei CHOU, Jhao-Cheng YE
  • Publication number: 20150228854
    Abstract: An epitaxial structure includes a substrate, a first epitaxial layer and a second epitaxial layer. The substrate has a surface, and the first epitaxial layer is disposed over the substrate and defines a plurality of stepped air voids and an opening over each of the stepped air voids. The second epitaxial layer is disposed on the first epitaxial layer and collectively defines the stepped air voids with the surface and the first epitaxial layer.
    Type: Application
    Filed: April 23, 2015
    Publication date: August 13, 2015
    Inventors: Jun-Rong CHEN, Hsiu-Mei CHOU, Jhao-Cheng YE
  • Publication number: 20150162496
    Abstract: The invention provides a method for fabricating a light-emitting diode device. The method includes providing a carrier having a first surface and a second surface. The first surface has insulating micro patterns. A buffer layer, a first-type semiconductor layer, a light-emitting layer and a second-type semiconductor layer are grown on the first surface to form a light-emitting lamination layer. A substrate is provided for the second-type semiconductor layer to bond on. The carrier is lifted off from the light-emitting lamination layer by a laser lift-off process, and surfaces of the insulating micro patterns and a surface of the barrier layer between the insulating micro patterns are exposed. The insulating micro patterns and the barrier layer are removed. Recess structures are formed on the first-type semiconductor layer. A surface-roughing process is then performed on the recess structures.
    Type: Application
    Filed: May 19, 2014
    Publication date: June 11, 2015
    Applicant: LEXTAR ELECTRONICS CORPORATION
    Inventor: Jun-Rong CHEN
  • Patent number: 9048381
    Abstract: The invention provides a method for fabricating a light-emitting diode device. The method includes providing a carrier having a first surface and a second surface. The first surface has insulating micro patterns. A buffer layer, a first-type semiconductor layer, a light-emitting layer and a second-type semiconductor layer are grown on the first surface to form a light-emitting lamination layer. A substrate is provided for the second-type semiconductor layer to bond on. The carrier is lifted off from the light-emitting lamination layer by a laser lift-off process, and surfaces of the insulating micro patterns and a surface of the buffer layer between the insulating micro patterns are exposed. The insulating micro patterns and the buffer layer are removed. Recess structures are formed on the first-type semiconductor layer. A surface-roughing process is then performed on the recess structures.
    Type: Grant
    Filed: May 19, 2014
    Date of Patent: June 2, 2015
    Assignee: Lextar Electronics Corporation
    Inventor: Jun-Rong Chen
  • Patent number: 9041159
    Abstract: An epitaxial growth method includes the steps of: providing a substrate; forming a sacrifice layer on the substrate; patterning the sacrifice layer to form a plurality of bumps spaced apart from each other on the substrate; epitaxially forming a first epitaxial layer on the substrate to cover a portion of each of the bumps; removing the bumps to form a plurality of cavities; and epitaxially forming a second epitaxial layer on the first epitaxial layer such that the cavities are enclosed by the first epitaxial layer and the second epitaxial layer. An epitaxial structure grown by the method is disclosed as well.
    Type: Grant
    Filed: July 1, 2013
    Date of Patent: May 26, 2015
    Assignee: LEXTAR ELECTRONICS CORPORATION
    Inventors: Jun-Rong Chen, Hsiu-Mei Chou, Jhao-Cheng Ye
  • Patent number: 8784697
    Abstract: A conductive paste is provided. The conductive paste includes a conductive powder and a resin composition. The resin composition includes a polyester acrylate oligomer, a hydroxyalkyl acrylate (HAA) and a polyvinylpyrrolidone (PVP) derivative. The conductive powder and the resin composition have a weight ratio of 40-85:15-60. The polyester acrylate oligomer, the hydroxyalkyl acrylate (HAA) and the polyvinylpyrrolidone (PVP) derivative have a weight ratio of 15-70:10-60:3-40.
    Type: Grant
    Filed: July 27, 2012
    Date of Patent: July 22, 2014
    Assignee: Industrial Technology Research Institute
    Inventors: Kuo-Chan Chiou, Jun-Rong Chen, Hsin-Mei Chen
  • Patent number: 8729588
    Abstract: The present invention provides a light emitting diode (LED) element which comprises a substrate, a buffer layer, a plurality of nano-spheres and a light emitting structure. The substrate comprises a plurality of grooves arranged at intervals on a surface of the substrate. The buffer layer is disposed on the surface of the substrate where the grooves being formed, wherein the grooves are disposed between the substrate and the buffer layer. The nano-spheres are received in the grooves, so each groove is provided with at least a nano-sphere. The light emitting structure is disposed on the buffer layer.
    Type: Grant
    Filed: October 23, 2012
    Date of Patent: May 20, 2014
    Assignee: Lextar Electronics Corporation
    Inventors: Jun-Rong Chen, Jhao-Cheng Ye
  • Publication number: 20140008766
    Abstract: An epitaxial growth method includes the steps of: providing a substrate; forming a sacrifice layer on the substrate; patterning the sacrifice layer to form a plurality of bumps spaced apart from each other on the substrate; epitaxially forming a first epitaxial layer on the substrate to cover a portion of each of the bumps; removing the bumps to form a plurality of cavities; and epitaxially forming a second epitaxial layer on the first epitaxial layer such that the cavities are enclosed by the first epitaxial layer and the second epitaxial layer. An epitaxial structure grown by the method is disclosed as well.
    Type: Application
    Filed: July 1, 2013
    Publication date: January 9, 2014
    Inventors: Jun-Rong Chen, Hsiu-Mei Chou, Jhao-Cheng Ye
  • Publication number: 20130292722
    Abstract: The present invention provides a light emitting diode (LED) element which comprises a substrate, a buffer layer, a plurality of nano-spheres and a light emitting structure. The substrate comprises a plurality of grooves arranged at intervals on a surface of the substrate. The buffer layer is disposed on the surface of the substrate where the grooves being formed, wherein the grooves are disposed between the substrate and the buffer layer. The nano-spheres are received in the grooves, so each groove is provided with at least a nano-sphere. The light emitting structure is disposed on the buffer layer.
    Type: Application
    Filed: October 23, 2012
    Publication date: November 7, 2013
    Applicant: Lextar Electronics Corporation
    Inventors: Jun-Rong CHEN, Jhao-Cheng YE