Abstract: This invention relates to a method for forming a submicron pattern of a resist using a silylation process which can improve resolution and a side wall profile of the resist. The method comprises the steps for coating a photo resist film on a silicon substrate, forming a primary insoluble layer by a surface treatment of the coated resist film with alkali solution, forming a latent image pattern on an exposed part of the resist film by exposing the resist film using a mask for exposure, forming a surface step with the non-exposed resist film by carrying out a selective etching of the exposed resist film to a certain thickness, forming a silylation layer on the surface of the exposed and etched resist film by carrying out a silylation process, removing the non-exposed resist film by etching, and forming a resist pattern by removing the silylation layer.

Abstract: This invention relates to a method for fabrication of masks suitable for improving semiconductor wafers in resolution, which comprises processes for depositing a phases shifting layer and an opaque layer on a transparent substrate, defining an opaque area and a transparent area and removing the opaque layer from the transparent area selectively, forming side wall on the sides of the opaque layer, and removing the exposed phase shifting layer selectively using the side walls and the opaque layer as a mask.

Abstract: An edge enhancement phase shifting mask having a recessed opaque layer which optimally exhibits the phase shifting effect at edge portion is disclosed, wherein the mask comprises a transparent substrate having at least one or more trenches spaced apart from each other by a predetermined distance, an opaque layer filling some portion of the trench, and a phase shifting layer formed on the substrate area between the trenches.

Abstract: A method for forming a MLR pattern.The method comprises the steps of:forming a bottom resist film on a semiconductor substrate in which a semiconductor device is formed;forming a inter-layer on the bottom resist film;forming a top resist film on the inter-layer, wherein a first top resist film made of an inorganic material and a second top resist film made of another inorganic material and formed on the first top resist film;exposing the top resist film using a pattern mask;etching the exposed portion of the second top resist film of the top resist film;etching the first top resist film using the remained-unexposed portion of the second top resist file made of the second inorganic material as an etch mask, to form a pattern of the top resist film;etching the inter-layer and the bottom resist film using the pattern of the top resist film as an etch mask, in this order, to form a MLR pattern; andremoving the pattern of the top resist film.