Abstract: A semiconductor photoresist composition includes an organometallic compound represented by Chemical Formula 1 and a solvent. A method of forming patterns utilizes the semiconductor photoresist composition.

Abstract: A semiconductor photoresist composition and a method of forming or providing patterns using the semiconductor photoresist composition are disclosed. The semiconductor photoresist composition may include an organometallic compound; a polymer additive including a structural unit represented by Chemical Formula 1; and a solvent.

Abstract: Disclosed are a semiconductor photoresist composition and a method of forming patterns using the same, the semiconductor photoresist composition including an Sn-containing organometallic compound; a carboxylic acid compound represented by Chemical Formula 1; and a solvent.

Abstract: Disclosed are a semiconductor photoresist composition including an organometallic compound; a vinyl group-containing acid compound; and a solvent, and a method of forming a pattern using the same.

Abstract: A metal-containing photoresist developer composition, and a method of forming patterns including a step (e.g., an act or task) of developing using the same are provided. The metal-containing photoresist developer composition includes an organic solvent, an acid compound, and a conjugate base compound of the acid compound.

Abstract: Provided is a composition for forming a silica layer, the composition containing a silicon-containing polymer and a solvent, wherein a silica layer formed of the composition for forming the silica layer satisfies Relation 1. The definition of Relation 1 is as described in the specification. The definition of Relation 1 is the same as described in the specification.

Abstract: Disclosed is a composition for forming a silica layer including perhydropolysilazane (PHPS) and a solvent, wherein in an 1H-NMR spectrum of the perhydropolysilazane (PHPS) in CDCl3, when a peak derived from N3SiH1 and N2SiH2 is referred to as Peak 1 and a peak derived from NSiH3 is referred to as Peak 2, a ratio (P1/(P1+P2)) of an area (P1) of Peak 1 relative to a total area (P1+P2) of the Peak 1 and Peak 2 is greater than or equal to 0.77, and when an area from a minimum point between the peaks of Peak 1 and Peak 2 to 4.78 ppm is referred to as a Region B and an area from 4.78 ppm to a minimum point of Peak 1 is referred to as a Region A of the area of Peak 1, a ratio (PA/PB) of an area (PA) of Region A relative to an area (PB) of Region B is greater than or equal to about 1.5.

Abstract: Provided is a composition for forming a silica layer, the composition containing a silicon-containing polymer and a solvent, wherein a silica layer formed of the composition for forming the silica layer satisfies Relation 1. The definition of Relation 1 is as described in the specification. The definition of Relation 1 is the same as described in the specification.

Abstract: Disclosed is a composition for forming a silica layer including perhydropolysilazane (PHPS) and a solvent, wherein in an 1H-NMR spectrum of the perhydropolysilazane (PHPS) in CDCl3, when a peak derived from N3SiH1 and N2SiH2 is referred to as Peak 1 and a peak derived from NSiH3 is referred to as Peak 2, a ratio (P1/(P1+P2)) of an area (P1) of Peak 1 relative to a total area (P1+P2) of the Peak 1 and Peak 2 is greater than or equal to 0.77, and when an area from a minimum point between the peaks of Peak 1 and Peak 2 to 4.78 ppm is referred to as a Region B and an area from 4.78 ppm to a minimum point of Peak 1 is referred to as a Region A of the area of Peak 1, a ratio (PA/PB) of an area (PA) of Region A relative to an area (PB) of Region B is greater than or equal to about 1.5.

Abstract: A composition for forming a silica layer includes a silicon-containing polymer and a solvent, the composition having a SiO2 conversion rate of greater than about 0 and less than or equal to about 15. The SiO2 conversion rate is represented by: SiO2 conversion rate=(a ratio of an area of Si—O to an area of Si—H measured after coating the composition in a thickness of 6700 ? on a bare wafer, and allowing the coated wafer to stand for 24 hours under conditions of a temperature of 85° C. and a relative humidity of 85%)?(a ratio of an area of Si—O to an area of Si—H measured after coating the composition in a thickness of 6700 ? on a bare wafer, and allowing the coated wafer to stand for 2 hours under conditions of a temperature of 85° C. and a relative humidity of 85%).

Abstract: A composition for forming a silica layer includes a silicon-containing polymer and a solvent, the composition having a SiO2 conversion rate of greater than about 0 and less than or equal to about 15. The SiO2 conversion rate is represented by: SiO2 conversion rate=(a ratio of an area of Si—O to an area of Si—H measured after coating the composition in a thickness of 6700 ? on a bare wafer, and allowing the coated wafer to stand for 24 hours under conditions of a temperature of 85° C. and a relative humidity of 85%)?(a ratio of an area of Si—O to an area of Si—H measured after coating the composition in a thickness of 6700 ? on a bare wafer, and allowing the coated wafer to stand for 2 hours under conditions of a temperature of 85° C. and a relative humidity of 85%).

Abstract: A composition for forming a silica layer including a silicon-containing polymer having a weight average molecular weight of about 20,000 to about 70,000 and a polydispersity index of about 5.0 to about 17.0 and a solvent; a silica layer manufactured using the same; and an electronic device including the silica layer.

Abstract: A composition for forming a silica layer including a silicon-containing polymer having a weight average molecular weight of about 20,000 to about 70,000 and a polydispersity index of about 5.0 to about 17.0 and a solvent; a silica layer manufactured using the same; and an electronic device including the silica layer.