Abstract: A light-emitting element includes a first light-emitting layer including a first quantum dot and a second light-emitting layer including a second quantum dot provided between the cathode electrode and an anode electrode in order from the cathode electrode, the first quantum dot has a core-shell structure including a first core and a first shell, the second quantum dot has a core-shell structure including a second core and a second shell, and an energy level at a lower end of a conduction band of the first core is higher than an energy level at a lower end of a conduction band of the second core.

Abstract: A light-source apparatus, an inspection apparatus, and an adjustment method capable of facilitating the adjustment of the temperature of a BBO crystal are provided. A light-source apparatus according to the present disclosure includes a first light source configured to generate visible light, a first external resonator including a plurality of optical mirrors, a BBO crystal disposed in the first external resonator, capable of generating UV light in a wavelength range of 233 nm to 236 nm, the UV light being a second harmonic of the visible light, a one- or two-dimensional semiconductor sensor disposed near a far-field image plane formed through an optical element provided on an optical path of the UV light, and a calculation unit configured to calculate a representative position of a light intensity distribution detected by the semiconductor sensor.

Abstract: A concealment device includes at least one memory configured to store instructions and at least one processor configured to execute the instructions to generate a second string in which a substring of a first string detected as a concealment target has been replaced with another substring, and input the second string to a device that outputs a response to the second string.

Abstract: Sb1<Eb×Sb2 is satisfied, where Eb is the energy conversion efficiency of a blue-wavelength conversion layer, where Sb1 is the standard photopic luminous efficiency of first blue light, where Sb2 is the standard photopic luminous efficiency of second blue light.

Abstract: A method for manufacturing a functional element including a pixel, the method includes: applying a coating containing a curable material and a functional material; curing the coating applied by the applying the coating; and adjusting a film thickness of the coating cured by the curing the coating to decrease the film thickness of the coating.

Abstract: A light-emitting element includes a light absorption layer for transmitting at least part of light that is visible light of a first color emitted by a light-emitting layer in a functional layer and absorbing at least part of visible light other than the light. The light absorption layer is disposed adjacent to both a reflective layer and a first electrode and covers the entire reflective layer in a light-emitting region.

Abstract: Provided is a display element according to an aspect of the disclosure including a flattening film and, on the flattening film, a plurality of banks each having a linear shape, a plurality of active layers each having a linear shape and formed between adjacent banks, and an upper transparent electrode formed on each of the plurality of active layers. A cut line having a locally reduced height with reference to the flattening film is formed in each the plurality of banks, and the upper transparent electrode formed on one of the adjacent active layers and the upper transparent electrode formed on the other of the adjacent active layers are electrically connected via a conductive electrode formed in the cut line.

Abstract: A display device includes subpixels including light-emitting elements; reflective portions provided in part of the subpixels and each having a reflective surface inclined with respect to a surface of a substrate; a high refractive index layer provided on a second electrode, and guiding light, to the reflective surface, entering from the second electrode side at an angle equal to or greater than a total reflection critical angle and transmit light entering at an angle less than the total reflection critical angle; a substrate provided to face the surface; and a spacer forming a gap layer having a certain thickness between the substrate and the high refractive index layer provided at least in a region not overlapping the reflective portions in a plan view, and dispose the substrate away from the reflective portions. The refractive index of the high refractive index layer is higher than that of the gap layer.

Abstract: A hole transport layer serving as a target layer includes a part of a region formed between a plurality of lower electrodes and a partition, and includes a first portion and a second portion across at least one of a non-formation portion of the target layer and a region where the target layer is thinner than the target layer on the plurality of lower electrodes in the reverse tapered portion.

Abstract: A method for manufacturing a display device includes the following: a) forming a first resist layer over a substrate; b) patterning the first resist layer by removing the first resist layer formed over a first region of the substrate; c) forming a first light-emitting material layer over the first resist layer patterned, and above the first region of the substrate with the first resist layer removed; d) forming a second resist layer over the first light-emitting material layer; e) patterning the second resist layer by removing the first resist layer formed over a second region of the substrate, followed by lifting off the first light-emitting material layer and the second resist layer formed over the first resist layer over the second region; and f) forming a second light-emitting material layer over the second resist layer patterned, and above the second region of the substrate with the first second resist layer removed.

Abstract: A display device is a display device provided with a display region including a plurality of pixels and a frame region surrounding the display region, and includes: a thin film transistor layer; and a light-emitting element layer including a plurality of light-emitting elements, each including a first electrode, a function layer, and a second electrode, and each having a different luminescent color, wherein the function layer includes a light-emitting layer, and a pair of holding layers sandwiching the light-emitting layer and each including a photosensitive material and a conductive nanoparticle.

Abstract: A display device includes a first common charge transport layer, a first light-emitting layer and a second light-emitting layer each of which is formed on the first common charge transport layer, a common electrode formed over both of the first light-emitting layer and the second light-emitting layer, and a leakage blocking layer having an insulating property, the leakage blocking layer being superimposed on two adjacent end portions of the first light-emitting layer and the second light-emitting layer in plan view, and a distance between the first common charge transport layer and the common electrode is larger in a first region where each of the first light-emitting layer and the second light-emitting layer is superimposed on the leakage blocking layer than in a second region where each of the first light-emitting layer and the second light-emitting layer is not superimposed on the leakage blocking layer.

Abstract: A method of manufacturing a display device includes: a) a step of preparing a substrate including an electrode and another electrode; b) a step of forming a photosensitive resin material layer on the substrate; c) a step of forming a charge transport material layer and a light-emitting material layer on the substrate; and d) a step of patterning the photosensitive resin material layer, the charge transport material layer, and the light-emitting material layer into a photosensitive resin layer, a charge transport layer, and a light-emitting layer respectively by retaining, without lifting off, non-lift-off portions of the photosensitive resin material layer, the charge transport material layer, and the light-emitting material layer, the non-lift-off portions being provided at least on a part of the electrode, and lifting off lift-off portions of the photosensitive resin material layer, the charge transport material layer, and the light-emitting material layer.

Abstract: A method of manufacturing a display device includes: a) forming a first pixel electrode and a second pixel electrode; b) forming a first light-emitting layer on the first pixel electrode; c) forming a photosensitive resin layer on the second pixel electrode and on the first light-emitting layer; d) forming a photosensitive resin pattern having an opening on the second pixel electrode and including a structural member e) forming a light-emitting material layer on the photosensitive resin pattern and on an opening bottom portion that is at least a part of the second pixel electrode and that is provided below the opening; and f) forming a second light-emitting layer on the second pixel electrode by lifting off a first lift-off portion that is a part of the photosensitive resin pattern and a second lift-off portion that is a part of the light-emitting material layer, with the structural member being left intact.

Abstract: A light-source apparatus, an inspection apparatus, and an adjustment method capable of facilitating the adjustment of the temperature of a BBO crystal are provided. A light-source apparatus according to the present disclosure includes a first light source configured to generate visible light, a first external resonator including a plurality of optical mirrors, a BBO crystal disposed in the first external resonator, capable of generating UV light in a wavelength range of 233 nm to 236 nm, the UV light being a second harmonic of the visible light, a one- or two-dimensional semiconductor sensor disposed near a far-field image plane formed through an optical element provided on an optical path of the UV light, and a calculation unit configured to calculate a representative position of a light intensity distribution detected by the semiconductor sensor.

Abstract: A method for manufacturing a light-emitting element includes forming a first light-emitting layer by applying a first quantum dot solution containing first quantum dots, forming a first resist layer by applying a first photosensitive resin composition onto the first light-emitting layer, exposing the first resist layer to light in a predetermined pattern, and performing a pattern formation of developing the first resist layer with a developing solution to form a patterned first resist layer, and processing the first light-emitting layer with a treatment liquid using the patterned first resist layer as a mask to form a patterned first light-emitting layer.

Abstract: A light-emitting element producing method includes: a step of forming a first-charge transport layer on a first electrode; a step of applying a first photosensitive resin composition, containing first quantum dots, to the first-charge transport layer, and forming a first-quantum-dot containing layer; a step of applying a second photosensitive resin composition, containing second quantum dots, to the first-quantum-dot containing layer, and forming a second-quantum-dot containing layer; a step of forming a second-charge transport layer on the second-quantum-dot containing layer; and a step of forming a second electrode on the second-charge transport layer.

Abstract: A method for manufacturing a functional element including a pixel, the method includes: applying a coating containing a curable material and a functional material; curing the coating applied by the applying the coating; and adjusting a film thickness of the coating cured by the curing the coating to decrease the film thickness of the coating.

Abstract: A light-emitting device includes a first light-emitting layer disposed between a cathode and an anode and having a light emission central wavelength being a first wavelength; a second light-emitting layer disposed between the anode and the first light-emitting layer, having a light emission central wavelength being a second wavelength shorter than the first wavelength, and having an electron affinity lower than an electron affinity of the first light-emitting layer; and a first electron transport layer disposed between the first light-emitting layer and the second light-emitting layer in the second light-emitting region and having magnitude of an electron affinity between an electron affinity of the first light-emitting layer and an electron affinity of the second light-emitting layer.

Abstract: A light-emitting device includes a first light-emitting region in which a light emission peak wavelength is a first wavelength; a second light-emitting region in which a light emission peak wavelength is a second wavelength shorter than the first wavelength; a cathode disposed in the first light-emitting region and the second light-emitting region; an anode facing the cathode in the first light-emitting region and the second light-emitting region; a second light-emitting layer disposed between the cathode and the anode in the first light-emitting region and the second light-emitting region and having a light emission peak wavelength being the second wavelength; a first light-emitting layer disposed between the anode and the second light-emitting layer at least in the first light-emitting region and having a light emission peak wavelength being the first wavelength; and a first electron transport layer disposed between the first light-emitting layer and the second light-emitting layer in the first light-emitti