Abstract: A method for forming a mask pattern of a semiconductor device is disclosed. An example method arranges a main pattern and arranges a first fine auxiliary pattern in the vicinity of the main pattern. The example method also arranges a second fine auxiliary pattern in the vicinity of edges of the main pattern. In the example method, the second fine auxiliary pattern has a predetermined tilt angle with respect to the first fine auxiliary pattern.

Abstract: Disclosed is an apparatus for detecting a belt-cutoff of a dryer. The apparatus comprises a drying drum accommodating a laundry therein; a motor applying a rotational force to the dry drum; a belt wound around the drying drum and a rotating shaft of the motor; and a belt cut detecting unit provided adjacent to the motor in order to sense the belt-cutoff, wherein the belt cut detecting unit is pressed as the motor is rotated by a turning moment when the belt is cut off.

Abstract: There is provided an air inlet structure of a laundry dryer. In the air inlet structure, a base defines an air inlet, a front cabinet is disposed in front of the base and defines a suction hole to pass ambient air into the base, a cooling fan is stably disposed in the base to suck the ambient air, a blower tube forms a flow passage for the ambient air, a blower cover is fixed to the base to connect the blower tube and the cooling fan, and an air guide is disposed between the base and the blower cover, the air guide having a shroud at a center portion.

Abstract: Provided is a mask pattern of a semiconductor device. The mask pattern includes a plurality of main patterns and a plurality of assistance patterns. The main patterns are adjacent to one another. The assistance pattern is disposed on at least one of an end portion and a middle portion of each of the main patterns and has a line width greater than that of the main pattern. The assistance patterns are staggered.

Abstract: A method of fabricating a photomask automatically generates a microscopic supplementary pattern by selective sizing to reduce a product cost and by which a precise line width is provided in a manner of decreasing unnecessary microscopic supplementary patterns to raise precision of a photomask pattern. The method includes the steps of selectively carrying out a sizing on a main pattern to form a microscopic supplementary pattern with a difference of the corresponding sizing and selectively removing the microscopic supplementary pattern.

Abstract: The present invention provides a phase shift mask and fabricating method thereof, by which a critical dimension of a semiconductor pattern can be accurately formed in a manner of compensating a boundary step difference between an active area and an insulating layer. The present invention includes a transparent substrate and at least two halftone layers on the transparent substrate to have light transmittance lower than that of the transparent substrate, each comprising front and rear parts differing in thickness from each other.

Abstract: An optical proximity correction (OPC) mask pattern used in a layout for a photolithography process. An OPC mask pattern may include a first mask pattern for an active region and a second mask pattern for a gate pattern. The second mask pattern may have a plurality of micro patterns stacked at the end, which avoids unintended overlapping of the first mask pattern and the second mask pattern.

Abstract: In a fabrication method of a semiconductor device a manufacturing method of a mask and an optimization method of a mask bias incorporating an optical proximity correction are provided. The manufacturing method of the mask incorporating an optical proximity correction can form a pattern in an excellent quality in a dense area where a micro design pattern in an irregular array state is formed. Also, a desired design pattern can be formed using a mask according to embodiments of the present invention regardless of an array state.

Abstract: The present invention relates to a mask and a method of manufacturing a microlens using the mask, which condenses external light in a CMOS image sensor so that the microlens irradiated by means of a photodiode can have an excellent radius of curvature. With the present invention, the phase shift mask for forming the microlens in the CMOS image sensor is formed by stacking at least two phase shifting layers having different transmissivity from each other so that the microlens can have even size when forming the microlens using the phase shift mask and the microlens can have even curvature regardless of the location of the mask pattern array.

Abstract: Masks for fabricating a semiconductor device and methods of forming mask patterns are provided which are capable of enhancing the breakdown voltage of the fabricated semiconductor device by accurately correcting a line width pattern error of a semiconductor substrate due to a mask error during a process for forming a well ion implantation mask pattern. A disclosed mask used to manufacture a semiconductor device having complementary N-well and P-well includes: a master mask for the complementary N-well and P-well; and a light-blocking pattern on the master mask, wherein a region of the master mask, which is not a portion of the master mask adjacent to the light-blocking pattern, is etched by a predetermined thickness to have a phase shifting function.

Abstract: A method of calibrating a line width in a semiconductor device including fitting line width CD (critical dimension) data to a log function by measuring the line width CD data to plot selectively according to a space size in mask design, fabrication, and correction and applying an output value of the log function as a mask fabrication line width bias by selectively inputting a space value.

Abstract: Disclosed are methods of fabricating a semiconductor device, by which the pad and fuse layers play their roles smoothly and to enhance a quality of a final semiconductor device. According to one example, a disclosed method includes forming an insulating layer covering a pad and a fuse on prescribed portions of a substrate, simultaneously forming a first trench exposing an anti-reflective coating layer provided as a top layer of the pad and a second trench having a portion of the insulating layer underneath over the fuse by selectively removing the first insulating layer, filling up the first and second trenches with an etch rate adjustment layer, exposing the anti-reflective coating layer to leave a portion of the etch rate adjustment layer within the second trench by selectively removing the etch rate adjustment layer, and simultaneously removing the anti-reflective coating layer and the portion of the etch rate adjustment layer from the second trench.

Abstract: The present invention is directed to an optical disk having a projection that prevents full contact of the upper surface of the disk when engaging a supporting surface. The optical disk includes a projection formed in a central portion of the optical disk that abuts or is near the upper surface of a protecting layer.

Abstract: A dryer and a drain structure of the same are provided. The drain structure of a dryer includes a base, a condenser mounted on the base, and a drain concaved from front to rear of a condenser mounting surface, which is provided on the base and mounts the condenser thereon.

Abstract: There is provided an air inlet structure of a laundry dryer. In the air inlet structure, a base defines an air inlet, a front cabinet is disposed in front of the base and defines a suction hole to pass ambient air into the base, a cooling fan is stably disposed in the base to suck the ambient air, a blower tube forms a flow passage for the ambient air, a blower cover is fixed to the base to connect the blower tube and the cooling fan, and an air guide is disposed between the base and the blower cover, the air guide having a shroud at a center portion.

Abstract: The present disclosure provides an exposure method for a semiconductor device, in which whether a specific pattern corresponds to a sparse area or a dense area is decided to employ a specific phase-shift mask and by which critical dimension uniformity and resolution of the pattern are enhanced. One example method includes defining a hole area for a plurality of holes into a dense area and a sparse area, coating a photoresist layer on a substrate having a plurality of elements formed thereon, carrying out a first exposure on the photoresist layer using a first photomask having patterns corresponding to the dense and sparse areas, respectively, and carrying out a second exposure on the photoresist layer using a second photomask having at least two halftone layers provided to portions corresponding to the dense and sparse areas, respectively wherein the at least two halftone layers differ from each other in transmitivity, respectively.

Abstract: A method of measuring thickness of an optical disc by using an interference effect of the optical disc layer is disclosed. The method includes detecting an intensity of a reflective light according to a wavelength of a light as spectrum data for each wavelength, converting the detected spectrum data for each wavelength into a spectrum value as a function of a wavelength that a refractive index is reflected, and detecting a position where the intensity of the reflective light has a peak as a thickness of a spacer layer and a cover layer respectively by converting the converted value into a length of an interference area for representing a layer thickness of the optical disc by the Fast Fourier Transform. The disclosed method has advantages for high precisely measuring thickness of an optical disc.

Abstract: An optical disk for recording or/and reproducing information by using a laser beam includes a substrate formed by an inorganic material having elastic modulus of 2400 MPa or more, or a mixture of inorganic and plastic materials; a reflective layer formed on the substrate; a cover layer formed on the reflective layer; and a protective layer formed on the cover layer, wherein, the laser beam for recording or/and reproducing the information is incident on the protective layer and the cover layer.

Abstract: Disclosed is an optical disk. The present invention includes a plate having a first area enabling to record information thereon and a second area unable to record the information thereon and a projection on the second area of the plate. Accordingly, the present invention enables to form a protecting layer having a uniform thickness thereon.

Abstract: A mask for fabricating a semiconductor device, which is capable of correcting an optical proximity effect, includes a transparent mask plate, a main pattern formed on the mask plate as a light blocking layer, and a subsidiary pattern a corner of which is offset in a direction of 45.+-.10 degrees or 135.+-.10 degrees from a line longitudinally extended from the main pattern's edge line. The corner of the subsidiary pattern may be contiguous or non-contiguous with a corner of the main pattern.