Abstract: An integrated circuit includes a sampling control circuit configured to: generate a counting signal according to a periodic signal during a sampling period, and generate a plurality of sampling enable signals by comparing counting bits of the counting signal with random bits of a random signal; and a sampling circuit configured to: store an input address as a plurality of sampling addresses according to the respective sampling enable signals, and generate a plurality of valid section signals based on the sampling enable signals to output one of the sampling addresses as a target address according to an uppermost valid section signal among activated valid section signals.

Abstract: An integrated circuit includes a sampling control circuit configured to generate a sampling enable signal by dividing a sampling period into a plurality of sub-sections according to an active counting signal generated by counting a number of inputs of an active signal during the sampling period, and comparing the active counting signal with a random signal for each sub-section; and a sampling circuit configured to sample and store an input address according to the sampling enable signal.

Abstract: The present invention relates to a CMP slurry that is able to reduce dishing generation, when it is applied to polishing or planarization of silicon oxide layer, for example, and a polishing method. The CMP slurry includes a polishing abrasive, a linear anionic polymer, a compound including a phosphoric acid group, and water, and the ratio of CMP polishing speed to a silicon oxide layer: CMP polishing speed to a silicon nitride layer is 30:1 to 50:1.

Abstract: The present invention relates to a CMP slurry that is able to reduce dishing generation, when it is applied to polishing or planarization of silicon oxide layer, for example, and a polishing method. The CMP slurry includes a polishing abrasive, a linear anionic polymer, a compound including a phosphoric acid group, and water, and the ratio of CMP polishing speed to a silicon oxide layer: CMP polishing speed to a silicon nitride layer is 30:1 to 50:1.

Abstract: The present invention relates to a method for preparing single crystalline cerium oxide nanopowder capable of easily controlling the shape and granularity of particles. The method includes preparing cerium hydroxide by precipitating a cerium salt in the presence of a solvent mixture of organic solvent and water and hydrothermally reacting the prepared cerium hydroxide. The prepared single crystalline cerium oxide has a particle size of not less than about 30 nm and an excellent degree of dispersion.

Abstract: The present Invention relates to a method for preparing single crystalline cerium oxide nanopowder capable of easily controlling the shape and granularity of particles. The method includes preparing cerium hydroxide by precipitating a cerium salt in the presence of a solvent mixture of organic solvent and water and hydrothermally reacting the prepared cerium hydroxide. The prepared single crystalline cerium oxide has a particle size of not less than about 30 nm and an excellent degree of dispersion.

Abstract: A method for producing iron oxide powder, of which the particle size and shape are controlled, comprising the steps of dissolving &agr;-FeOOH in a glycol as a solvent to provide a solution; adding a controller for particle size and shape of the powder to the solution to provide a mixture; and reacting the mixture at a temperature of 150 to 300 ° C. for 1 to 48 hours.