Patents by Inventor Jun Seok SEONG

Jun Seok SEONG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor element
    Patent number: 10784409
    Abstract: An embodiment provides a semiconductor element, which comprises: a plurality of semiconductor structures, each of which comprises a first conductive semiconductor layer, a second conductive semiconductor layer, an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, and a first recess extending through the second conductive semiconductor layer and the active layer to a partial area of the first conductive semiconductor layer; a second recess disposed between the plurality of semiconductor structures; a first electrode disposed at the first recess and electrically connected to the first conductive semiconductor layer; a reflective layer disposed under the second conductive semiconductor layer; and a protrusion part disposed on the second recess and protruding higher than the upper surfaces of the semiconductor structures, wherein a surface, on which the first electrode contacts the first conductive semiconductor layer in the first recess, is 300
    Type: Grant
    Filed: November 10, 2017
    Date of Patent: September 22, 2020
    Assignee: LG INNOTEK CO., LTD.
    Inventors: Jun Seok Seong, Byeong Kyun Choi, Ku Hyun
  • SEMICONDUCTOR ELEMENT
    Publication number: 20200066938
    Abstract: An embodiment provides a semiconductor element, which comprises: a plurality of semiconductor structures, each of which comprises a first conductive semiconductor layer, a second conductive semiconductor layer, an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, and a first recess extending through the second conductive semiconductor layer and the active layer to a partial area of the first conductive semiconductor layer; a second recess disposed between the plurality of semiconductor structures; a first electrode disposed at the first recess and electrically connected to the first conductive semiconductor layer; a reflective layer disposed under the second conductive semiconductor layer; and a protrusion part disposed on the second recess and protruding higher than the upper surfaces of the semiconductor structures, wherein a surface, on which the first electrode contacts the first conductive semiconductor layer in the first recess, is 300
    Type: Application
    Filed: November 10, 2017
    Publication date: February 27, 2020
    Inventors: Jun Seok SEONG, Byeong Kyun CHOI, Ku HYUN